63 BALL FBGA Search Results

SAMSUNG moviNAND

Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
Contextual Info: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002

daewon

Abstract: DAEWON tray 48 daewon tray 260 9 130 451 044 DAEWON FBGA 9 140 010 044 daewon tray TRAY MPPO
Contextual Info: ‹ Chapter 5 Trays Fine-Pitch Ball Grid Array: NLB 044, VDA 044, VDD 044, NLB 056, NSB 056 3416 \ f27328a \ 12-13-07 Notes: See next page for detailed views 1 All dimensions are in millimeters. Packages and Packing Methodologies Handbook 17 Oct 2008 5-63

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE/BE 10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20887-2E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640E80/90/12 • DESCRIPTION The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to

MS-034

Abstract: JEDEC FBGA 11 JEDEC MS-034-AAJ-1
Contextual Info: Altera Device Package Information 400-Pin Wirebond FineLine Ball-Grid Array FBGA • ■ ■ All dimensions and tolerances conform to ANSI Y14.5M – 1994. Controlling dimension is in millimeters. M is the maximum solder ball matrix size. Package Information

JEDEC FBGA 12 19

Abstract: MS-034 JEDEC OUTLINE
Contextual Info: Altera Device Package Information 324-Pin Non-Thermally Enhanced FineLine Ball-Grid Array FBGA • ■ ■ All dimensions and tolerances conform to ANSI Y14.5M – 1994. Controlling dimension is in millimeters. M is the maximum solder ball matrix size. Package Information

MS-034

Contextual Info: Altera Device Package Information 1020-Pin Thermally Enhanced FineLine Ball-Grid Array FBGA • ■ ■ ■ All dimensions and tolerances conform to ANSI Y14.5M – 1994. Controlling dimension is in millimeters. Orientation of the package is shown by a chamfer and/or a pin 1 mark.

Contextual Info: 240PIN DDR2 533 Registered DIMM 2048MB With 128Mx8 CL4 TS256MQR72V5U Placement Description The TS256MQR72V5U is a 256M x 72bits DDR2-533 Registered DIMM. The TS256MQR72V5U consists of 18 pcs 128Mx8 bits DDR2 SDRAMs in 68 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 400 Registered DIMM 512MB With 64Mx4 CL3 TS64MQR72V4E Placement Description The TS64MQR72V4E is a 64M x 72bits DDR2-400 Registered DIMM. The TS64MQR72V4E consists of 18 pcs 64Mx4 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 400 Registered DIMM 512MB With 32Mx8 CL3 TS32MQR72V4F Placement Description The TS32MQR72V4F is a 32M x 72bits DDR2-400 Registered DIMM. The TS32MQR72V4F consists of 9 pcs 32Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 1 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 800 Registered DIMM 512MB With 64Mx8 CL5 TS64MQR72V8J Placement Description The TS64MQR72V8J is a 64M x 72bits DDR2-800 Registered DIMM. The TS64MQR72V8J consists of 9 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA package, 1 pcs register in 96 ball uBGA package, 1 pcs PLL driver IC

Contextual Info: 240PIN DDR2 533 Registered DIMM 512MB With 64Mx4 CL4 TS64MQR72V5E Placement Description The TS64MQR72V5E is a 64M x 72bits DDR2-533 Registered DIMM. The TS64MQR72V5E consists of 18 pcs 64Mx4 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 800 Registered DIMM 512MB With 64Mx8 CL5 TS64MQR72V8J Description Placement The TS64MQR72V8J is a 64M x 72bits DDR2-800 Registered DIMM. The TS64MQR72V8J consists of 9 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA package, 1 pcs register in 96 ball uBGA package, 1 pcs PLL driver IC

Contextual Info: 240PIN DDR2 667 Registered DIMM 2048MB With 128Mx8 CL5 TS256MQR72V6U Description Placement The TS256MQR72V6U is a 256M x 72bits DDR2-667 Registered DIMM. The TS256MQR72V6U consists of 18 pcs 128Mx8 bits DDR2 SDRAMs in 68 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 667 Registered DIMM 4096MB With 256Mx4 CL5 TS512MQR72V6T Description Placement The TS512MQR72V6T is a 512M x 72bits DDR2-667 Registered DIMM. The TS512MQR72V6T consists of 36 pcs 256Mx4bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 176 ball TFBGA package, 1

Contextual Info: 240PIN DDR2 400 Registered DIMM 1024MB With 128Mx4 CL3 TS128MQR72V4K Description Placement The TS128MQR72V4K is a 128M x 72bits DDR2-400 Registered DIMM. The TS128MQR72V4K consists of 18 pcs 128Mx4bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 800 Registered DIMM 1024MB With 128Mx8 CL5 TS128MQR72V8U Description Placement The TS128MQR72V8U is a 128M x 72bits DDR2-800 Registered DIMM. The TS128MQR72V8U consists of 9 pcs 128Mx8 bits DDR2 SDRAMs in 68 ball FBGA package, 1 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 400 Registered DIMM 512MB With 64Mx8 CL3 TS64MQR72V4J Description Placement The TS64MQR72V4J is a 128M x 72bits DDR2-400 Registered DIMM. The TS64MQR72V4J consists of 9 pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA package, 1 pcs register in 96 ball uBGA package, 1 pcs PLL driver IC

Contextual Info: 240PIN DDR2 667 Registered DIMM 1024MB With 64Mx8 CL5 TS128MQR72V6J Description Placement The TS128MQR72V6J is a 128M x 72bits DDR2-667 Registered DIMM. The TS128MQR72V6J consists of 18 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

CY7C1355B

Abstract: CY7C1357B 63a3
Contextual Info: CY7C1355B CY7C1357B 9-Mb 256K x 36/512K x 18 Flow-Through SRAM with NoBL Architecture Features • JTAG boundary scan for BGA and fBGA packages • No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles. • Can support up to 133-MHz bus operations with zero

marking code micron label

Contextual Info: ADVANCE‡ 64Mb MULTIBANK ASYNC/PAGE FLASH 16Mb ASYNC CellularRAM MEMORY FLASH AND CellularRAM COMBO MEMORY MT28C64416W18AFY Low Voltage, Wireless Temperature Features Figure 1: 68-Ball FBGA Stacked die Combo package • Includes one 64Mb Flash device • Includes one 16Mb CellularRAM device

MT41K512M16

Abstract: 96 ball fbga thermal resistance micron MT41K256M16 DDR3L 63 ball fbga thermal resistance micron micron marking code information marking micron MT41K256M16 DDR3 impedance 1m x16 SDRAM MICRON
Contextual Info: 8Gb: x16 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K512M16 – 32 Meg x 16 x 8 Banks Description Options Marking • Configuration – 32 Meg x 16 x 8 banks x 2 ranks • FBGA package Pb-free – 96-ball FBGA (10mm x 14mm x 1.2mm)