63 BALL FBGA Search Results

SAMSUNG moviNAND

Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
Contextual Info: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002

U37Y

Contextual Info: 1 Gigabit Stacked DDR2 SDRAM 128Mb x 8 DD51E Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and • • • • • • • •

U37Y

Contextual Info: 1 Gigabit Stacked DDR2 SDRAM DD50E 256Mb x 4 Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA • 50% Space Savings Over Two 60 Ball BGA Packages • Significant Space Savings and Reduced Parasitics and • • • • • • • •

U48B

Abstract: DDR2 Mechanical Dimensions
Contextual Info: 2 Gigabit Stacked DDR2 SDRAM DD52E 512Mb x 4 Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA. • 8 x 11.5 x 1.35mm BGA Package • 50% Space Savings Over Two 60 Ball BGA Packages • Reduced Trace Lengths Over Two BGA Packages • Lead Free—High Temperature Solder Balls

Contextual Info: 2 Gigabit Stacked DDR2 SDRAM DD53E 256Mb x 8 Features • Low Profile 63 Ball Two-High Stacked Die micropede BGA. • 8 x 11.5 x 1.35mm BGA Package • 50% Space Savings Over Two 60 Ball BGA Packages • Reduced Trace Lengths Over Two BGA Packages • Lead Free—High Temperature Solder Balls

Am29LV* 64 boot

Abstract: 740-0007 am29lv065 SA14 SA15 SA16 FSA063 SA10 SA11 SA12
Contextual Info: PRELIMINARY Am29LV652D 128 Megabit 16 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Two 64 Megabit (Am29LV065D) in a single 63-ball 11 x 12 mm FBGA package (Note: Features will be described for each internal Am29LV065D)

Contextual Info: PRELIMINARY Am29LV652D 128 Megabit 16 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Two 64 Megabit (Am29LV065D) in a single 63-ball 11 x 12 mm FBGA package (Note: Features will be described for each internal Am29LV065D)

daewon

Abstract: DAEWON tray 48 daewon tray 260 9 130 451 044 DAEWON FBGA 9 140 010 044 daewon tray TRAY MPPO
Contextual Info: ‹ Chapter 5 Trays Fine-Pitch Ball Grid Array: NLB 044, VDA 044, VDD 044, NLB 056, NSB 056 3416 \ f27328a \ 12-13-07 Notes: See next page for detailed views 1 All dimensions are in millimeters. Packages and Packing Methodologies Handbook 17 Oct 2008 5-63

Contextual Info: PRELIMINARY Am29DL642G 128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS • Two 64 Megabit (Am29DL640G) in a single 63-ball 12 x 11 mm Fine-pitch BGA package (features are described herein for each internal Am29DL640G)

Contextual Info: PRELIMINARY Am29DL642G 128 Megabit 8 M x 16-Bit CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memory DISTINCTIVE CHARACTERISTICS • Two 64 Megabit (Am29DL640G) in a single 63-ball 12 x 11 mm Fine-pitch BGA package (features are described herein for each internal Am29DL640G)

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20889-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDS322TE/BE 10/11 • DESCRIPTION The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Marking code vacc

Abstract: FPT-48P-M19 FPT-48P-M20
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20887-2E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640E80/90/12 • DESCRIPTION The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20887-1E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640E80/90/12 • DESCRIPTION The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to

BGA-63

Abstract: Diode SA98 BGA63
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20887-3E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640E80/90/12 • DESCRIPTION The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 M words of 16 bits each. The device is offered in 48-pin TSOP (1) and 63-ball FBGA packages. This device is designed

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29DL640E 5C000
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20887-2E FLASH MEMORY CMOS 64 M 8 M x 8/4 M × 16 BIT Dual Operation MBM29DL640E80/90/12 • DESCRIPTION The MBM29DL640E is a 64 M-bit, 3.0 V-only Flash memory organized as 8 Mbytes of 8 bits each or 4 Mwords of 16 bits each. The device is offered in 48-pin TSOP (I) and 63-ball FBGA packages. This device is designed to

MS-034

Abstract: JEDEC FBGA 11 JEDEC MS-034-AAJ-1
Contextual Info: Altera Device Package Information 400-Pin Wirebond FineLine Ball-Grid Array FBGA • ■ ■ All dimensions and tolerances conform to ANSI Y14.5M – 1994. Controlling dimension is in millimeters. M is the maximum solder ball matrix size. Package Information

JEDEC FBGA 12 19

Abstract: MS-034 JEDEC OUTLINE
Contextual Info: Altera Device Package Information 324-Pin Non-Thermally Enhanced FineLine Ball-Grid Array FBGA • ■ ■ All dimensions and tolerances conform to ANSI Y14.5M – 1994. Controlling dimension is in millimeters. M is the maximum solder ball matrix size. Package Information

8355F

Abstract: CY7C37128 JESD22 plaskon
Contextual Info: Cypress Semiconductor Package Qualification Report QTP# 000473 VERSION 1.0 April, 2000 100/256 Lead Fine Pitch Ball Grid Array FBGA ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069 Cypress Semiconductor

8355F

Abstract: 130C JESD22
Contextual Info: Cypress Semiconductor Package Qualification Report QTP# 99331 VERSION 2.0 December, 2000 48 Lead Fine Pitch Ball Grid Array FBGA 7mm x 8.5mm ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069 Kim-Ngan Nguyen

Contextual Info: TECHNOLOGY BACKGROUND &KLS6FDOH 3DFNDJLQJ IRU $0' ODVK 0HPRU\ 3URGXFWV 2 Chip-Scale Packaging Technology Background The AMD Fine-pitch Ball Grid Array FBGA) The FBGA package offers system designers a chip-scale package for Flash memories that provides a significant reduction in board real estate over TSOP packages and provides many

transistor smd G46

Abstract: fluke 52 k/j Thermocouple 7512 pin diodes in micro semi data sheet smd transistor marking ey SMD MARKING CODE h5 MCP Technology Trend BGA-64 pad AMD reflow soldering profile BGA SMD MARKING CODE l6 BGA Solder Ball 0.6mm
Contextual Info: FBGA User’s Guide Version 4.2 -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG