63 BALL FBGA Search Results

SAMSUNG moviNAND

Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
Contextual Info: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002

Contextual Info: 240PIN DDR2 533 Registered DIMM 2048MB With 128Mx8 CL4 TS256MQR72V5U Placement Description The TS256MQR72V5U is a 256M x 72bits DDR2-533 Registered DIMM. The TS256MQR72V5U consists of 18 pcs 128Mx8 bits DDR2 SDRAMs in 68 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 400 Registered DIMM 512MB With 64Mx4 CL3 TS64MQR72V4E Placement Description The TS64MQR72V4E is a 64M x 72bits DDR2-400 Registered DIMM. The TS64MQR72V4E consists of 18 pcs 64Mx4 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

TS256MQR72V6UL

Contextual Info: 240PIN DDR2 667 VLP Registered DIMM 2048MB With 128Mx8 CL5 TS256MQR72V6UL Description Placement The TS256MQR72V6U is a 256M x 72bits DDR2-667 Registered DIMM. The TS256MQR72V6UL consists of 18 pcs 128Mx8 bits DDR2 SDRAMs in 68 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 800 Registered DIMM 512MB With 64Mx8 CL5 TS64MQR72V8J Description Placement The TS64MQR72V8J is a 64M x 72bits DDR2-800 Registered DIMM. The TS64MQR72V8J consists of 9 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA package, 1 pcs register in 96 ball uBGA package, 1 pcs PLL driver IC

Contextual Info: 240PIN DDR2 667 Registered DIMM 2048MB With 128Mx8 CL5 TS256MQR72V6U Description Placement The TS256MQR72V6U is a 256M x 72bits DDR2-667 Registered DIMM. The TS256MQR72V6U consists of 18 pcs 128Mx8 bits DDR2 SDRAMs in 68 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

CY7C1355B

Abstract: CY7C1357B 63a3
Contextual Info: CY7C1355B CY7C1357B 9-Mb 256K x 36/512K x 18 Flow-Through SRAM with NoBL Architecture Features • JTAG boundary scan for BGA and fBGA packages • No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles. • Can support up to 133-MHz bus operations with zero

marking code micron label

Contextual Info: ADVANCE‡ 64Mb MULTIBANK ASYNC/PAGE FLASH 16Mb ASYNC CellularRAM MEMORY FLASH AND CellularRAM COMBO MEMORY MT28C64416W18AFY Low Voltage, Wireless Temperature Features Figure 1: 68-Ball FBGA Stacked die Combo package • Includes one 64Mb Flash device • Includes one 16Mb CellularRAM device

Contextual Info: 240PIN DDR2 667 Registered DIMM 2048MB With 128Mx4 CL5 TS256MQR72V6K Placement Description The TS256MQR72V6K is a 256M x 72bits DDR2-667 Registered DIMM. The TS256MQR72V6K consists of 36 pcs 128Mx4bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 240PIN DDR2 667 Registered DIMM 2048MB With 128Mx4 CL5 TS256MQR72V6K Placement Description The TS256MQR72V6K is a 256M x 72bits DDR2-667 Registered DIMM. The TS256MQR72V6K consists of 36 pcs 128Mx4 bits DDR2 SDRAMs in 60 ball FBGA package, 4 pcs register in 96 ball uBGA package, 1

Contextual Info: 240PIN DDR2 533 Unbuffered DIMM 512MB With 64Mx8 CL4 TS64MLQ64V5J Description Placement The TS64MLQ64V5J is a 64M x 64bits DDR2-533 Unbuffered DIMM. The TS64MLQ64V5J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 240PIN DDR2 533 Unbuffered DIMM 1GB With 64Mx8 CL4 JM533QLJ-1G Placement Description The JM533QLJ-1G is a 128M x 64bits DDR2-533 Unbuffered DIMM. The JM533QLJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 240PIN DDR2 533 ECC Unbuffered DIMM TS256MLQ72V5U 2GB With 128Mx8 CL4 Description Placement The TS256MLQ72V5U is a 256M x 72bits DDR2-533 Unbuffered DIMM. The TS256MLQ72V5U consists of 18 pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 JM800QLJ-512M Description Placement The JM800QLJ-512M is a 64M x 64bits DDR2-800 Unbuffered DIMM. The JM800QLJ-512M consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 512MB With 64Mx8 CL5 JM667QLJ-512M Description Placement The JM667QLJ-512M is a 64M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLJ-512M consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 1GB With 64Mx8 CL5 JM800QLJ-1G Placement Description The JM800QLJ-1G is a 128M x 64bits DDR2-800 Unbuffered DIMM. The JM800QLJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 2GB With 128Mx8 CL5 JM667QLU-2G • Description Placement The JM667QLU-2G is a 256M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLU-2G consists of 16pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 240PIN DDR2 800 ECC Unbuffered DIMM 2GB With 128Mx8 CL5 TS256MLQ72V8U Placement Description The TS256MLQ72V8U is a 256M x 72bits DDR2-800 Unbuffered DIMM. The TS256MLQ72V8U consists of 18 pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 533 ECC Unbuffered DIMM 512MB With 64Mx8 CL4 TS64MLQ72V5J Description Placement The TS64MLQ72V5J is a 64M x 72bits DDR2-533 Unbuffered DIMM. The TS64MLQ72V5J consists of 9 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 0.72” 1GB With 64Mx8 CL5 JM667QLJ-1G Description Placement The JM667QLJ-1G is a 128M x 64bits DDR2-667 Unbuffered DIMM. The JM667QLJ-1G consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 240PIN DDR2 800 Registered DIMM 1024MB With 128Mx8 CL6 TS128MQR72V8U Description Placement The TS128MQR72V8U is a 128M x 72bits DDR2-800 Registered DIMM. The TS128MQR72V8U consists of 9 pcs 128Mx8 bits DDR2 SDRAMs in FBGA package, 1 pcs register in 96 ball uBGA package, 1 pcs PLL driver IC

smartphone MOTHERBOARD CIRCUIT diagram

Abstract: AP-DOC-070 Micron 512MB nand FLASH mcp J9 G3 MARKING G3 MICRON mcp QUALCOMM Reference manual A0-A21 DM270 Flash MCp nand DRAM 107-ball
Contextual Info: DiskOnChip-Based MCP Including DiskOnChip G3 and PSRAM Data Sheet, July 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code

Contextual Info: 240PIN DDR2 800 Registered DIMM 2048MB With 128Mx8 CL6 TS256MQR72V8U Description Placement The TS256MQR72V8U is a 256M x 72bits DDR2-800 Registered DIMM. The TS256MQR72V8U consists of 18 pcs 128Mx8 bits DDR2 SDRAMs in FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs PLL driver IC

Contextual Info: ADVANCE‡ 4 MEG x 8, 4 MEG x 9, 2 MEG x 18, 1 MEG x 36 1.8V VDD, HSTL, QDRIIb4 SRAM 36Mb QDR II SRAM 4-WORD BURST MT54W4MH8J MT54W4MH9J MT54W2MH18J MT54W1MH36J FEATURES Figure 1 165-Ball FBGA • DLL circuitry for accurate output data placement • Separate independent read and write data ports with