60NS1 Search Results

UES302

Abstract: UM801 UES803 100-C BYW78-100 BYW78-150 BYW78-50 UES801 UES802
Contextual Info: RECTIFIERS UES801 UES802 UES803 High Efficiency, 50A and 70A BYW78-50 BYW78-100 BYW78-150 FEATURES DESCRIPTION • High Continuous Current Rating • Very Low Forward Voltage • Very Fast Switching Speeds This Series is specifically designed for operation in power switching circuits

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18T MT28C256564W18T Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices

88-ball

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18T MT28C256564W18T Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices

MT28C256

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18D MT28C256564W18D Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package

q001

Abstract: M29W256GH
Contextual Info: 256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • VPP/WP# pin protection – Protects first or last block regardless of block protection settings • Software protection – Volatile protection

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18T MT28C256564W18T Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18D MT28C256564W18D Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package

Contextual Info: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 m eg ab it C M O S static R A M m odule T h e ID T 7 M 4 0 4 8 is a 4 m eg ab it 5 1 2 K x 8 C M O S static • Equivalent to the J E D E C stan dard for future monolithic

w18 SMD

Abstract: W18 SMD MARKING CODE INTEL flash part MARKING marking code micron label cub smd Flash Controller Micron micron part marking decoder
Contextual Info: 64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A ADVANCE‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18S MT28C256564W18S Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices

INFINEON "part marking"

Abstract: marking code micron label
Contextual Info: PRELIMINARY‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30E MT28C128564W18/W30E Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA Stacked die Combo package • Includes two 64Mb Flash devices

BYW78-100

Abstract: BYW78-150 BYW78-50 UES801 UES802 UES803
Contextual Info: RECTIFIERS High Efficiency, 50A and 70A UES801 UES802 UES803 BYW78-50 BYW78-100 BYW78-150 FEATURES DESCRIPTION • • • • • • This Series is specifically designed for operation in power switching circuits operating at frequencies of at least 20KHz. The very low forward voltage and

Contextual Info: 256Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W256GH, M29W256GL Features • VPP/WP# pin protection – Protects first or last block regardless of block -protection settings • Software protection – Volatile protection

marking code micron label

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18S MT28C256564W18S Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package

Micron flash

Abstract: marking code micron label marking W18
Contextual Info: PRELIMINARY‡ 64Mb MULTIBANK BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A PREVIEW‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

Q1932

Contextual Info: 47E D I N T E G R A T E D D E VI CE Bi 4 Ö 2 5 7 7 1 OGlGlSt. T • 512K x 8 CMOS STATIC RAM MODULE IDT PRELIMINARY IDT7M4048 -m -v z -w In teg rated D evice T echnology, Inc* FEATURES: DESCRIPTION: • High density 4 megabit C M O S static RAM module • Equivalent to the J E D E C standard for future monolithic

Contextual Info: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4048 Integrateci Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit CM O S static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 17ns max.

oSC-70

Contextual Info: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 2 megabit C M O S static RAM module • Equivalent to the JE D E C standard for future monolithic 256K x 8 static RAMs • Fast access time: 17ns max.

Contextual Info: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 2 megabit CM O S static RAM module • Equivalent to the JEDEC standard for future monolithic 256K x 8 Static RAMs • Fast access time: 17ns max.

Contextual Info: PRELIMINARY‡ 256Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C256532W18D MT28C256564W18D Low Voltage, Wireless Temperature Features Figure 1: 88-Ball FBGA Stacked die Combo package • Includes two 128Mb Flash devices

Contextual Info: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated Device Technology» Inc. DESCRIPTION: FEATURES: T h e ID T 7 M 4 0 6 8 is a 2 m eg ab it 2 5 6 K x 8 C M O S static • High density 2 m eg ab it C M O S static R A M m odule • E qu ivalent to th e J E D E C stan d a rd for future monolithic

Contextual Info: -ly -.1 r w Bowmar/lfllhite 32K x 8 BIT PROGRAMMABLE EEPROM 8023 T e c h n o lo g y PIN DIAGRAM A 14C 1 A 12C 2 A7C 3 A6C 4 A5C 5 A4 [I 6 A3C 7 A2C 8 A1C 9 ADC 10 l/OOC 11 1/01 C 12 I /0 2 C 13 VssC 14 28 27 26 25 24 FEATURES 3 Vcc □ WE □ A13 Voltage: +5V and Gnd

2824 footprint dimension

Abstract: 2824 footprint 2B24
Contextual Info: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated D evice T ech n o logy, Inc. FEATURES: DESCRIPTION: • High density 2 megabit C M O S static RAM module • Equivalent to the JE D E C standard for future monolithic 256 K x 8 static RAMs • Fast access time: 17ns max.

7M4048

Abstract: 2B22
Contextual Info: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4048 Integrated D evice Tech nology, Inc. FEATURES: DESCRIPTION: • High density 4 m eg ab it C M O S static R A M m odule • E qu ivaient to th e J E D E C stan dard for future monolithic 5 1 2 K x 8 static R A M s