5C PNP TRANSISTOR Search Results

BC807-40

Abstract: BC807-40/5C BC807-25 bc807 BC817-25 BC817-40 marking 5C
Contextual Info: BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Type Marking BC807-25 5B BC807-40 5C SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE

marking A1 TRANSISTOR

Abstract: 35-e 20v marking 5b BC807-16W BC817W
Contextual Info: BC807-16W, -25W, -40W -500 mA, -50 V PNP Plastic Encapsulate Transistor Elektronische Bauelemente FEATURES z z z Ideally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W MARKING 16W:5A; 25W:5B; 40W:5C PACKAGE DIMENSIONS

transistor Bf 979

Abstract: pnp vhf transistor
Contextual Info: I BSE D • flB35taDS 0GG45Ö4 T ■ SIEG 'T -3 I-/S BF 979 S PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 5C 04584 D - BF 9 7 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 4 1 8 6 7 .

SC 9153

Abstract: 2SB888
Contextual Info: Ordering number: EN 9 1 5C 2SB888 N0.915C PNP Epitaxial Planar Silicon Darlington Transistor SAXYO i Driver Applications Applications . Motor drivers, printer h a m m e r drivers, relay drivers, voltage regulator control Features . High DC current gain 5000 or greater .

DTA143

Abstract: marking a5 5B marking transistor A5 transistors sot-23 5C TRANSISTOR MARKING CBO 40V CEO 25V EBO 5V transistor marking A5 a5 marking transistor 5b 5b transistor
Contextual Info: DTA1 43 PNP EPTTAXIAL SILICON TRANSISTOR SURFACE MOUNT TRANSISTORS SOT-23 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 Emitter-Base Voltage V CBO

BC807-16

Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
Contextual Info: BC807-16/-25/40 PNP EPTTAXIAL SILICON TRANSISTOR SOT-23 SURFACE MOUNT TRANSISTORS 3 1 2 3 ANODE 1 2 CATHODE CATHODE Marking A5/5B/5C ABSOLUTE MAXIMUM RATINGS o Ta=25 C Symbol Characteristic Rating Unit Collector-Emitter Voltage V CEO -45 V Emitter-Base Voltage

BC807-16

Abstract: BC807-25 BC807-40
Contextual Info: BC807-16 / BC807-25 / BC807-40 BC807-16 BC807-25 BC807-40 C E SOT-23 B Mark: 5A. / 5B. / 5C. PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 1.0 A. Sourced from Process 78. Absolute Maximum Ratings*

BC807-40

Contextual Info: BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type Marking BC807-25 5B BC807-40 5C s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■

2n2219 equivalent

Abstract: BFY39 2N2219A BSX45 2N2905a equivalent BSY39 N3343 2N1132B SP3725QDB equivalent 2N2219 BSX88
Contextual Info: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF Max

BSy38

Abstract: Motorola* 2n708 2N1711 MOTOROLA DH3467CD 2N706 BSY39 SP3725 SP3725QDB tch98 2N706A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

2N1711 MOTOROLA

Abstract: DH3467CD equivalent 2N2219 2N2219A BSX45 bsy38 BSY39 SP3725 SP2222AF bsx46 equivalent SP2484F
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Electrical Characteristics @ 25° C Maxim um Ratings Ambient P q Type Polarity One Both Side Sides mW mW VCE<Sat) @ Ic / lß H f e ic Vcb Volts VCE Volts VEB Volts Min/Max mA Volts m A/m A Frequency

2N2270 equivalent

Abstract: 2N2317 DH3725CN Q2T3725 motorola 2N2270 to-18 2N2008 2N1711 MOTOROLA 2N1990 MOTOROLA bfy76 2N2102
Contextual Info: Transistors Cont. Discrete Devices Genera Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N1990 2IM2008 VCB Volts VCE Volts NPN 600 100 _ NPN 175 110 VEB Volts 3 8 H f e @ 'C VçE(Sat) @ lc / 'B

equivalent transistor 2N1711

Abstract: 2N2484 equivalent transistors transistor 2n1711 NPN transistor 2n2222A plastic package 2N328A transistor 2N929 2N1025 BT2222A DH3725CN MOTOROLA 2n2102 TRANSISTOR
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

equivalent transistor 2N1711

Abstract: MOTOROLA 2n2102 TRANSISTOR DH3725 transistor bfy39 SP3725 NPN transistor 2n2222A plastic package 2N2708 2N784A Motorola* 2n708 2N706A
Contextual Info: Discrete Devices Transistors Cont. Ultra High-Speed Logic Switches Electrical Characteristics @ 25° C Maxim um Ratings M Vcb Volts . NPN PD Ambient £1 Type VEB Volts h fe V c E (S a t) @ I q /I b @ ic Min/Max mA Volts m A/m A ft MHz Cob PF M ax tON ns

BC807

Abstract: BC807-16 BC808 BC808-16 BC817 BC818
Contextual Info: BC807, BC808 Small Signal Transistors PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 Pin Configuration 1 = Base 2 = Emitter 3 = Collector .016 (0.4) 0.079 (2.0) 0.035 (0.9) .007 (0.175) .005 (0.125)

marking 5A

Contextual Info: BC807, BC808 Small Signal Transistors PNP Features SOT-23 • PNP Silicon Epitaxial Planar Transistors for switching, AF driver and amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups

Contextual Info: BC807, BC808 Small Signal Transistors PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 0.079 (2.0) 0.035 (0.9) .007 (0.175) .005 (0.125) max. .004 (0.1) .037(0.95) .037(0.95) .016 (0.4)

Contextual Info: BC807, BC808 Small Signal Transistors PNP TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 Pin Configuration 1 = Base 2 = Emitter 3 = Collector .016 (0.4) 0.079 (2.0) 0.035 (0.9) .007 (0.175) .005 (0.125)

MMBTRA226S

Contextual Info: MMBTRA221S…MMBTRA226S PNP Silicon Epitaxial Planar Transistor for high current switching, interface circuit and driver circuit application. With Built-in Bias Resistor Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process High Output Current: -800mA

ST-RA225S

Abstract: 12v6
Contextual Info: ST-RA221S…RA226S PNP Silicon Epitaxial Planar Transistor for high current switching, interface circuit and driver circuit application. With Built-in Bias Resistor Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process OUT R1 IN R2 COMMON +

Contextual Info: ST-RA221S…RA226S PNP Silicon Epitaxial Planar Transistor for high current switching, interface circuit and driver circuit application. With Built-in Bias Resistor Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process OUT R1 IN R2 COMMON +

stra226

Contextual Info: ST-RA221S…RA226S PNP Silicon Epitaxial Planar Transistor for high current switching, interface circuit and driver circuit application. With Built-in Bias Resistor Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process OUT TYPE NO. R1 kΩ

stra226

Contextual Info: ST-RA221S…RA226S PNP Silicon Epitaxial Planar Transistor for high current switching, interface circuit and driver circuit application. With Built-in Bias Resistor Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process OUT R1 IN R2 COMMON +

Contextual Info: MMBTRA221SS.MMBTRA226SS PNP Silicon Epitaxial Planar Transistor for high current switching, interface circuit and driver circuit application. With Built-in Bias Resistor Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process High Output Current: -300mA