55AW Search Results

ADVANCED POWER TECHNOLOGY

Abstract: L-Band 1200-1400 MHz
Contextual Info: 1214-32LR2 1214-32L 32 Watts, 36 Volts Pulsed Radar at 1.2-1.4 GHz GENERAL DESCRIPTION CASE OUTLINE 55AW-1 The 1214-32L is an internally matched, COMMON BASE transistor capable of providing 32 Watts of pulsed RF output power at 5 milliseconds pulse width,

2124-12L

Contextual Info: R.A.041400 2124-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 COMMON BASE The 2124-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes

MDS60L

Abstract: MDS60 1090mhz 1030MHz-1090MHz
Contextual Info: MDS60L 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS60L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes a double input prematch for broadband performance.

Contextual Info: R.A.063099 DME375A 375 Watts, 50 Volts, Pulsed Avionics 1025-1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The DME375A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device

microwave amplifier 2.4 ghz 10 watts

Abstract: 2223 2223-9A transistor Common Base amplifier
Contextual Info: 2223-9A 9 Watts - 24 Volts, Class C Microwave 2200 - 2300 MHz CASE OUTLINE 55AW, STYLE 1 GENERAL DESCRIPTION The 2223-9 is a COMMON BASE transistor capable of providing 9 Watts of Class C, RF output power over the band 2200 - 2300 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

2124-12L

Contextual Info: R.A.041400 2124-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 COMMON BASE The 2124-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes

1517-110M

Abstract: W148
Contextual Info: 1517-110M 110 Watts, 40 Volts, 200µs, 10% Radar 1480 to 1650 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW-1 The 1517-110M is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 200 microseconds pulse width, 10% duty factor across the band 1480 to 1650 MHz. This hermetically

JTDB75

Contextual Info: JTDB75 75 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW, Style 1 The JTDB75 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest

MDS150

Abstract: max15020 6020V
Contextual Info: MDS150 150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS150 is a high power COMMON BASE bipolar transistor. It is designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The transistor includes input prematch for broadband performance. The device has

Contextual Info: JTDB25 25 Watts, 36 Volts, Pulsed Avionics, 960-1215 MHz CASE OUTLINE 55AW-1 GENERAL DESCRIPTION The JTDB25 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest

DME375A

Contextual Info: R.A.063099 DME375A 375 Watts, 50 Volts, Pulsed Avionics 1025-1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The DME375A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device

RT5870

Abstract: L-Band 1200-1400 MHz BVces
Contextual Info: 1214-32LR43 1214-32L 32 Watts, 36 Volts Pulsed Radar at 1.2-1.4 GHz CASE OUTLINE 55AW-1 GENERAL DESCRIPTION The 1214-32L is an internally matched, COMMON BASE transistor capable of providing 32 Watts of pulsed RF output power at 5 milliseconds pulse width,

2224-12L

Contextual Info: R.A.041400 2224-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 COMMON BASE The 2224-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes

JTDB25

Contextual Info: JTDB25 25 Watts, 36 Volts, Pulsed Avionics, 960-1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW-1 The JTDB25 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest

48536

Abstract: 74166 data sheet IC 74166 16AM08 178003 162007 stk+142+150
Contextual Info: 16AM08 8 Watts, 18 Volts, Class A Linear 1500 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW, STYLE 2 The 16AM08 is a COMMON EMITTER, HIGH GAIN transistor capable of providing 8 Watts , P1dB., Class A, RF output power in the band 1500 - 1700 MHz. The transistor includes double input and output prematching for full

55AW

Abstract: 1450 transistor
Contextual Info: R.1.072099 1516-35 35 WATT, 28V, Pulsed Microwave 1450 - 1550 MHz Proposed Product CASE OUTLINE 55AW, Style 1 GENERAL DESCRIPTION The 1516-35 is a common base transistor capable of providing 35 Watts of Class C, RF output power over the band 1450-1550 MHz. This transistor is

MDS60L

Abstract: 1030MHz-1090MHz
Contextual Info: MDS60L 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 The MDS60L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band. The transistor includes a double input prematch for broadband performance.

2224-12L

Contextual Info: R.A.041400 2224-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 COMMON BASE The 2224-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes

TAN250A

Contextual Info: TAN250A 250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW, Style 1 The TAN250A is a high powered COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest

97942

Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
Contextual Info: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

rt6010

Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Contextual Info: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

JTDB75

Contextual Info: JTDB 75 75 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The JTDB 75 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven

transistor DF 50

Contextual Info: DMEG 250 250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The DMEG 250 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization for proven highest MTTF. The

microwave amplifier 2.4 ghz 10 watts

Abstract: amplifier TRANSISTOR 12 GHZ 2324-12L
Contextual Info: 2324-12L 12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz GENERAL DESCRIPTION The 2324-12L is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier