550MI Search Results

QFJ032-P-R450-2

Contextual Info: PLASTIC LEADED CHIP CARRIER 32 PIN PLASTIC LCC-32P-M02 EIAJ code : ∗QFJ032-P-R450-2 32-pin plastic QFJ PLCC Lead pitch 50mil Package width x package length 450 × 550mil Lead shape J bend Sealing method Plastic mold (LCC-32P-M02) 32-pin plastic QFJ (PLCC)

CERAMIC LEADLESS CHIP CARRIER

Abstract: c3600 CERAMIC LEADLESS CHIP CARRIER LCC 68 transistor 36c PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC WQFN036-G-S550-1 C038
Contextual Info: LEADLESS CHIP CARRIER 36 PAD CERAMIC LCC-36C-F01 EIAJ code : WQFN036-G-S550-1 36-pad ceramic LCC Lead pitch 50mil Package width x package length 550 × 550mil Sealing method Frit seal LCC-36C-F01 36-pad ceramic LCC (LCC-36C-F01) R0.20(.008) TYP (36 PLCS)

NEC A39A

Abstract: 48pin TSOP a39a transistor a39a
Contextual Info: Unit : mm 335±1.0 23.5±0.5 288±0.5 27.5±0.5 137.5±0.5 A' NEC LA−A39A HEAT PROOF A 0.5 0.4 5.8 1.3 15.5 13.0 1.3 2.5 6.3 1.5 SECTION A−A' 8.8 180±1.0 21.25±0.5 32.0±0.1 14.1 LA - A39A Heat Proof Conductive Plastic Applied Package Quantity 48pin Plastic TSOP 550mil

2SC5287

Abstract: transistor 2SC5287 DSA0016511
Contextual Info: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25

TO220 HEATSINK DATASHEET

Abstract: 2SC5239 ATV3 transistor 800V 1A
Contextual Info: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 VEBO IC Symbol 10.2±0.2

QFJ-32C-C01

Contextual Info: QUAD FLAT J-LEADED PACKAGE 32 PIN CERAMIC QFJ-32C-C01 Lead pitch 50mil Package width x package length 450 × 550mil Lead shape J bend Sealing method Cerdip 32-pin ceramic QFJ QFJ-32C-C01 32-pin ceramic QFJ (QFJ-32C-C01) 3.44±0.35 (.135±.014) 2.11(.083)REF

CERAMIC LEADLESS CHIP CARRIER

Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC CERAMIC LEADLESS CHIP CARRIER LCC 68 LCC Package PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC WQFN032-C-R450-1
Contextual Info: LEADLESS CHIP CARRIER 32 PAD CERAMIC LCC-32C-A01 EIAJ code : WQFN032-C-R450-1 Lead pitch 50mil Package width x package length 450 × 550mil Sealing method Metal seal 32-pad ceramic LCC LCC-32C-A01 *Shape of PIN NO.1 INDEX : Subject to change without notice.

2SC3927

Abstract: DSA0016508
Contextual Info: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC

2SC5239

Contextual Info: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 550 VEBO IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max PC 50(Tc=25°C)

2SC4517

Abstract: 4517A transistor 800V 1A 2sc4517a
Contextual Info: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 2SC4517 2SC4517A 10.1±0.2

CERAMIC LEADLESS CHIP CARRIER

Abstract: PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC WQFN032-G-R450-1 LCC-32C-F01
Contextual Info: LEADLESS CHIP CARRIER 32 PAD CERAMIC LCC-32C-F01 EIAJ code : WQFN032-G-R450-1 32-pad ceramic LCC Lead pitch 50mil Package width x package length 450 × 550mil Sealing method Frit seal LCC-32C-F01 *Shape of PIN NO.1 INDEX : Subject to change without notice.

Contextual Info: QUAD FLAT L-LEADED PACKAGE 32 PIN CERAMIC FPT-32C-C02 Lead pitch 50mil Package width x package length 450 × 550mil Lead shape Gullwing Sealing method Cerdip Length of flat portion of pins 0.80mm 32-pin ceramic QFP FPT-32C-C02 32-pin ceramic QFP (FPT-32C-C02)

4517A

Abstract: 2sc4517 2SC4517A FM20
Contextual Info: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 10.1±0.2 IB 1.5 A VCE(sat)

2SC5287

Contextual Info: 2SC5287 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator and General Purpose 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO V 5(Pulse10) A hFE IC IC=10mA 550min VCE=4V, IC=1.8A 10 to 25

2SC3927

Contextual Info: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA V V(BR)CEO IC=10mA 550min V VCE=4V, IC=5A 10 to 28 10(Pulse15) A hFE IB 5 A VCE(sat) PC 120(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150

Signetics 27c64

Abstract: 27C64A 27C64A-12 27C64A-15 27C64A-20 27C64AI15 27C64AI20
Contextual Info: Philips Components-Signetics Document No. 853-0081 2 7 C 6 4 A ECN No. 01039 Date of Issue November 12, 1990 64K-bit CMOS EPROM 8K x 8 Status Product Specification Memory Products D ESC R IPT IO N FEA TU RES Philips Components-Signetics 27C64A C M O S E P R O M is a 65,536-bit 5V read

CY7C1009

Abstract: 7C1009 A14C
Contextual Info: PRELIMINARY r y f|pPA RJL- lrP Anni I CY7C1009 128Kx 8 Static RAM Features Functional Description • Highspeed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 1020 mW • Low standby power — 250 mW The CY7C1009 is a high-performance

lm4990s

Abstract: LDA10B LM4990 LM4990LD LM4990MH LM4990MM MUA08A
Contextual Info: LM4990 2 Watt Audio Power Amplifier with Selectable Shutdown Logic Level General Description Key Specifications The LM4990 is an audio power amplifier primarily designed for demanding applications in mobile phones and other portable communication device applications. It is capable of

PIMD3

Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power

MA3232

Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor b1154

Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BSW12

Abstract: 2n2718 2sc113 CI44 GW 9n BFW74 BFW75 BFW76 BFX53 T046
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BF125

Abstract: PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

27c256-15

Abstract: 27C256-20
Contextual Info: Philips Components-Signetics 27C256 Document No. 8 5 3 -0 0 94 ECN No. 0 10 4 0 Date of Issue N ove m b e r 1 2 ,1 9 9 0 Status Pro du ct S p ecification 256K-bit CMOS EPROM 32K x 8 M e m ory P ro du cts PIN CONFIGURATION DESCRIPTION FEATURES Philips C o m p o n e n ts -S ig n e tic s 27C 256