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    53A00100 Search Results

    53A00100 Datasheets Context Search

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    DPSD8MX32TY5

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP


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    dpsd8mx32ty5ipc-a-61053a001-0080-pin+130a225-12 PDF

    DPDD64MX8WSBNY5

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail CMOS DDR SDRAM DPDD64MX8WSBNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Mb, CMOS DDR Synchronous DRAM, Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two


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    dpdd64mx8wsbny5256mb30a249-01 PDF

    DPDD32MX8TSBY5

    Abstract: 4Mx8 30A242
    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit CMOS DDR SDRAM DPDD32MX8TSBY5 The Memory Stack series is a family of interchangeable memory devices. The 256 Mb, CMOS DDR Synchronous DRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb


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    dpdd32mx8tsby5128mbipc-a-61030a242-00+24mx830a242 PDF

    ipc 502

    Abstract: DPSD16MX16TKY5 A801
    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD16MX16TKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 256 Megabit SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 128Mb 16M x 8


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    dpsd16mx16tky5128mbdq0-dq1530a232-12+2ipc 502a801 PDF

    DPDD192MX8XSBY5

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1.5 Gigabit CMOS DDR SDRAM DPDD192MX8XSBY5 • • R I T FEATURES: O • • • • • VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC A13 VDD DNU CS2 WE CAS RAS CS0 CS1 BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1


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    dpdd192mx8xsby5a10/ap30a254-03 PDF

    DPSD128MX4WNY5

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


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    dpsd128mx4wny5256mb30a215-01 PDF

    TSOP 66 Package

    Abstract: DPDD128MX8XSBY5 TSOP 56 LAYOUT
    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit CMOS DDR SDRAM DPDD128MX8XSBY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 1 Gigabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices


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    dpdd128mx8xsby553a001-0030a254-01tsop 66 package+1tsop 56 layout PDF

    2C2001

    Contextual Info: 5 1 2 M e g a b it C M O S D D R S D R A M DPDDl 28MX4W SAY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory device. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The devices are constructed


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    28mx4wdpdd128mx4wsay52c2001 PDF

    3233H

    Contextual Info: ADVANCED C O M PO N E T E C H N O L O G IE S 5 1 2 M e g a b i t C M O S DDF? S D R A M DPDD32MX1 6W3C Y 5 DESCRIPTION: Z The LP-Stack series is a family of interchangeable memory device. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The devices are constructed


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    dpdd32mx1dpdd32mx16w53a001-003233h PDF

    DPDD128MX4WSANY5

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail CMOS DDR SDRAM DPDD128MX4WSANY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Mb, CMOS DDR Synchronous DRAM, Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two


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    dpdd128mx4wsany5256mb30a235-01 PDF

    DPSD32MX16WY5

    Contextual Info: 32Mx16, 7.5 - 15ns, P12, M-Densus 30A231-00 A M-Densus 512 Megabit Synchronous DRAM DPSD32MX16WY5 High Density Memory Device ADVANCED INFORMATION DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of


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    32mx1630a231-00dpsd32mx16wy553a001-00 PDF

    DPSD16MX8RY5

    Contextual Info: 16Mx8, 7.5 - 15ns, P12, M-Densus 30A181-22 G M-Densus 128 Megabit Synchronous DRAM DPSD16MX8RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are


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    16mx830a181-22dpsd16mx8ry553a001-00 PDF

    TSOP 54 PIN footprint

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 The Memory Stack series is a family of interchangeable memory modules. The 512 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are


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    dpdd32mx16wscy5cycles/64ms53a001-0030a246-00+1tsop 54 pin footprint PDF

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit CMOS DDR SDRAM DPDD64MX4TSAY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory moduels. The 256 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are


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    dpdd64mx4tsay5cycles/64ms53a001-0030a234-00 PDF

    30A215-00

    Contextual Info: 32Mx4, 10 - 12ns, M-Densus 30A181-02 E M-Densus 512 Megabit Synchronous DRAM DPSD128MX4WY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 512 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are


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    32mx430a181-02dpsd128mx4wy564meg+253a001-0030a215-00 PDF

    Contextual Info: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 PIN-OUT DIAGRAM DESCRIPTION: The 256 Megabit LP-Stack modules DPDD16MX16TSBY5, based on 128 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 8 DDR SDRAM TSOP monolithic. This allows for


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    dpdd16mx16tsby5a10/ap53a001-0030a245-00 PDF

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit CMOS DDR SDRAM DPDD64MX8WSBNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 512 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are


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    dpdd64mx8wsbny553a001-0030a249-01 PDF

    Contextual Info: 1 Gigabit Synchronous DRAM DPSD128MX8XKY5 PRELIMINARY DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 1 Gigabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed with 64 Meg x 8 SDRAMs.


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    dpsd128mx8xky553a001-0030a248-00 PDF

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128MX8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit Synchronous DRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb


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    dpsd128mx8xky5512mb53a001-0030a248-00 PDF

    30A215-01

    Abstract: DP 6 W
    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb


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    dpsd128mx4wny5256mb512mb30a215-01+1dp 6 w PDF

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD256MX4XY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit Syncronous DRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb


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    dpsd256mx4xy5512mb53a001-0030a215-10 PDF

    TSOP 48 LAYOUT

    Abstract: dp 502 t LP SDRAM tsop 66
    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 • Configuration Available: 16 Meg x 16 bit 2 Banks of 4 Meg x 8 bits x 4 • Clock Frequency: 100, 125, 133, 143 MHz • 2.5 Volt DQ Supply • JEDEC Standard SSTL_2 Interface for all Inputs/Outputs


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    dpdd16mx16tsby5cycles/64ms66-pin53a001-00+530a245-00tsop 48 layoutdp 502 tlp sdramtsop 66 PDF

    DPSD8MX16RKY5

    Contextual Info: 8Mx16, 7.5 - 15ns, P12, M-Densus 30A220-10 B M-Densus 128 Megabit Synchronous DRAM DPSD8MX16RKY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are


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    8mx1630a220-10dpsd8mx16rky553a001-00 PDF

    DPSD64MX16XY5

    Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD64MX16XY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gb SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb 32M x 16 SDRAMs.


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    dpsd64mx16xy5512mbdevice3430a231-10 PDF