53A00100 Search Results
53A00100 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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DPSD8MX32TY5Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit Synchronous DRAM DPSD8MX32TY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of this family which utilizes the space saving LP-Stack™ TSOP |
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dpsd8mx32ty5ipc-a-61053a001-0080-pin+1 | |
DPDD64MX8WSBNY5Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail CMOS DDR SDRAM DPDD64MX8WSBNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Mb, CMOS DDR Synchronous DRAM, Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two |
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dpdd64mx8wsbny5256mb30a249-01 | |
DPDD32MX8TSBY5
Abstract: 4Mx8 30A242
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dpdd32mx8tsby5128mbipc-a-61030a242-00+2 | |
ipc 502
Abstract: DPSD16MX16TKY5 A801
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dpsd16mx16tky5128mbdq0-dq1530a232-12+2 | |
DPDD192MX8XSBY5Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1.5 Gigabit CMOS DDR SDRAM DPDD192MX8XSBY5 • • R I T FEATURES: O • • • • • VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC A13 VDD DNU CS2 WE CAS RAS CS0 CS1 BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 |
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dpdd192mx8xsby5a10/ap30a254-03 | |
DPSD128MX4WNY5Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail SDRAM DPSD128MX4WNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Megabit SDRAM Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 256Mb |
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dpsd128mx4wny5256mb30a215-01 | |
TSOP 66 Package
Abstract: DPDD128MX8XSBY5 TSOP 56 LAYOUT
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dpdd128mx8xsby553a001-0030a254-01tsop 66 package+1 | |
2C2001Contextual Info: 5 1 2 M e g a b it C M O S D D R S D R A M DPDDl 28MX4W SAY5 DESCRIPTION: The LP-Stack series is a family of interchangeable memory device. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The devices are constructed |
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28mx4wdpdd128mx4wsay52c2001 | |
3233HContextual Info: ADVANCED C O M PO N E T E C H N O L O G IE S 5 1 2 M e g a b i t C M O S DDF? S D R A M DPDD32MX1 6W3C Y 5 DESCRIPTION: Z The LP-Stack series is a family of interchangeable memory device. The 512 Megabit Double Data Rate Synchronous DRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The devices are constructed |
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dpdd32mx1dpdd32mx16w53a001-003233h | |
DPDD128MX4WSANY5Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit Narrow Rail CMOS DDR SDRAM DPDD128MX4WSANY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 512 Mb, CMOS DDR Synchronous DRAM, Narrow Rail assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two |
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dpdd128mx4wsany5256mb30a235-01 | |
DPSD32MX16WY5Contextual Info: 32Mx16, 7.5 - 15ns, P12, M-Densus 30A231-00 A M-Densus 512 Megabit Synchronous DRAM DPSD32MX16WY5 High Density Memory Device ADVANCED INFORMATION DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 256 Megabit SDRAM is a member of |
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32mx1630a231-00dpsd32mx16wy553a001-00 | |
DPSD16MX8RY5Contextual Info: 16Mx8, 7.5 - 15ns, P12, M-Densus 30A181-22 G M-Densus 128 Megabit Synchronous DRAM DPSD16MX8RY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are |
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16mx830a181-22dpsd16mx8ry553a001-00 | |
TSOP 54 PIN footprintContextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit CMOS DDR SDRAM DPDD32MX16WSCY5 The Memory Stack series is a family of interchangeable memory modules. The 512 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are |
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dpdd32mx16wscy5cycles/64ms53a001-0030a246-00+1 | |
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Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 256 Megabit CMOS DDR SDRAM DPDD64MX4TSAY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory moduels. The 256 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are |
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dpdd64mx4tsay5cycles/64ms53a001-0030a234-00 | |
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30A215-00Contextual Info: 32Mx4, 10 - 12ns, M-Densus 30A181-02 E M-Densus 512 Megabit Synchronous DRAM DPSD128MX4WY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 512 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are |
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32mx430a181-02dpsd128mx4wy564meg+2 | |
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Contextual Info: 256 Megabit CMOS DDR SDRAM DPDD16MX16TSBY5 PIN-OUT DIAGRAM DESCRIPTION: The 256 Megabit LP-Stack modules DPDD16MX16TSBY5, based on 128 Megabit devices, has been designed to fit in the same footprint as the 16 Meg x 8 DDR SDRAM TSOP monolithic. This allows for |
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dpdd16mx16tsby5a10/ap53a001-0030a245-00 | |
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Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 512 Megabit CMOS DDR SDRAM DPDD64MX8WSBNY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory modules. The 512 Megabit Double Data Rate Synchronous DRAM module is a member of this family which utilizes the space saving LP-Stack™ TSOP stacking technology. The devices are |
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dpdd64mx8wsbny553a001-0030a249-01 | |
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Contextual Info: 1 Gigabit Synchronous DRAM DPSD128MX8XKY5 PRELIMINARY DESCRIPTION: The LP-Stack series is a family of interchangeable memory modules. The 1 Gigabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are constructed with 64 Meg x 8 SDRAMs. |
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dpsd128mx8xky553a001-0030a248-00 | |
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Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD128MX8XKY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit Synchronous DRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb |
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dpsd128mx8xky5512mb53a001-0030a248-00 | |
30A215-01
Abstract: DP 6 W
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dpsd128mx4wny5256mb512mb30a215-01+1 | |
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Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD256MX4XY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gigabit Syncronous DRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb |
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dpsd256mx4xy5512mb53a001-0030a215-10 | |
TSOP 48 LAYOUT
Abstract: dp 502 t LP SDRAM tsop 66
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dpdd16mx16tsby5cycles/64ms66-pin53a001-00+5 | |
DPSD8MX16RKY5Contextual Info: 8Mx16, 7.5 - 15ns, P12, M-Densus 30A220-10 B M-Densus 128 Megabit Synchronous DRAM DPSD8MX16RKY5 High Density Memory Device DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 128 Megabit SDRAM is a member of this family which utilizes the new and innovative space saving TSOP stacking technology. The modules are |
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8mx1630a220-10dpsd8mx16rky553a001-00 | |
DPSD64MX16XY5Contextual Info: ADVANCE D COM P ON E NTS PACKAG I NG 1 Gigabit Synchronous DRAM DPSD64MX16XY5 DESCRIPTION: The Memory Stack series is a family of interchangeable memory devices. The 1 Gb SDRAM assembly utilizes the space saving LP-Stack™ technology to increase memory density. This stack is constructed with two 512Mb 32M x 16 SDRAMs. |
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dpsd64mx16xy5512mbdevice3430a231-10 | |