528BYTES Search Results

ARM926T

Abstract: ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608
Contextual Info: i.MX21 Applications Processor Reference Manual Document Number: MC9328MX21RM Rev. 3 04/2007 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

K9S2808V0C

Abstract: K9S6408V0C K9S5608V0X
Contextual Info: K9S5608V0C/B K9S2808V0C/B K9S6408V0C/B SmartMediaTM Document Title SmartMediaTM Card Revision History Revision No Draft Date Remark 0.0 Initial issue July 17th 2000 0.1 1. Explain how pointer operation works in detail. 2. Updated operation for tRST timing

SAMSUNG K9F1208U0B

Abstract: K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D
Contextual Info: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Aug. 24th 2003 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

AT45D161

Abstract: AT45DB161B TSOP 28 SPI memory Package flash AT45D161-JC PA10 PA11
Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations

Flash MCp nand DRAM 107-ball

Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Contextual Info: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

K9F1208U0C-PCB

Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

SAMSUNG NAND Flash Qualification Report

Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

512M x 8 Bit NAND Flash Memory

Abstract: K9K1208U0A K9K1208U0A-VCB0 K9K1208U0A-VIB0
Contextual Info: K9K1208U0A-VCB0, K9K1208U0A-VIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Initial issue April. 17 2001 Remark Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

K9F1208B0B

Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
Contextual Info: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.

SAMSUNG 256Mb NAND Flash Qualification Reliability

Abstract: K9K1208U0M K9K1208U0M-YCB0 K9K1208U0M-YIB0 hamming code 512 bytes
Contextual Info: K9K1208U0M-YCB0, K9K1208U0M-YIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue June 19th 2000 Preliminary - The followings are disprepancy items between K9K5608U0M 256Mb

sram 2112

Abstract: 001H 106H NXSF014B-0699
Contextual Info: NX25F011A NX25F041A NX25F011A NX25F041A 1M-BIT AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE PRELIMINARY JUNE 1999 2 FEATURES • Flash Storage for Resource-Limited Systems – Ideal for portable/mobile and microcontroller-based applications that store voice, text, and data

for lpc3180

Abstract: UM10198 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C
Contextual Info: UM10198 LPC3180 User Manual Rev. 01 — 6 June 2006 Document information Info Content Keywords LPC3180; ARM9; 16/32-bit ARM microcontroller Abstract User manual for LPC3180 User manual UM10198 Philips Semiconductors LPC3180 User Manual Revision history Rev

HY27UF082G2A

Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
Contextual Info: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: Advanced Information SmartMediaTM K9S5608V0A-SSB0 Document Title 32M x 8 Bit SmartMediaTM Card Revision History Revision No 0.0 History Draft Date Remark Initial issue July 17th 2000 Advanced Information Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

K9F1208U0C-PCB0

Abstract: K9F1208U0C k9f1208u0cpcb0 k9f1208r0c K9F1208X0C K9F1208U0C-P K9F1208B0C K9F1208B0C-P K9F1208R0C-J
Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

sck 083

Abstract: at45db321 code TH sck 083 780 AC AT45DB321 TSOP 28 SPI memory Package flash PA10 PA11 PA12
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial-interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 8192 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations

SmartMedia Logical Format

Abstract: date code body marking samsung date code marking samsung K9S3208V0A K9S3208V0A-SSB0 SMFV004A SmartMedia Logical Format ID maker code SmartMedia Physical Format
Contextual Info: SmartMediaTM K9S3208V0A-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History Draft Date Remark 0.0 Initial Issue April 10th 1999 Final 0.1 1. Revised real-time map-out algorithm refer to technical notes 2. Changed voltage-density model marking method on SmartMedia

Contextual Info: Features * Single 4.5V - 5.5V Supply * Serial Interface Architecture * Page Program Operation - Single Cycle Reprogram Erase and Program - 4096 Pages (528 Bytes/Page) Main Memory * Optional Page and Block Erase Operations * Two 528-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of

Samsung NAND

Contextual Info: K9F5608Q0B-DCB0,DIB0 K9F5608U0B-YCB0,YIB0 K9F5608U0B-DCB0,DIB0 K9F5616Q0B-DCB0,DIB0 K9F5616U0B-YCB0,YIB0 K9F5616U0B-DCB0,DIB0 K9F5608U0B-VCB0,VIB0 K9F56XXQ0B:Preliminary K9F5616X0B:Preliminary FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Contextual Info: Advanced Information SmartMediaTM K9S3208V0B-SSB0 Document Title 4M x 8 bit SmartMedia TM Card Revision History Revision No. History 0.0 Initial Issue Draft Date Remark July 17th 2000 Advanced Information Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

Contextual Info: K9F5608Q0C-DCB0,DIB0 K9F5608U0C-YCB0,YIB0 K9F5608U0C-DCB0,DIB0 K9F5616Q0C-DCB0,DIB0 K9F5616U0C-YCB0,YIB0 K9F5616U0C-DCB0,DIB0 Advance K9F5608U0C-VCB0,VIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History

K9F1208U0C-PCB0

Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
Contextual Info: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: K9F2808Q0C-BCB0,BIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-BCB0,BIB0 K9F2816Q0C-BCB0,BIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-BCB0,BIB0 K9F2808U0C-VCB0,VIB0 Advance FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History

hynix NAND ECC

Abstract: reset nand flash HYNIX hynix nand spare area hynix nand flash 2gb transistor Marking 1K32 63FBGA 256kb nand flash Hynix E NAND hynix nand PROGRAMMING
Contextual Info: Preliminary HY27UG162G5A Series 2Gbit 128Mx16bit NAND Flash 2Gb NAND FLASH HY27UG162G5A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.