51OHM Search Results

SP508ECF-L

Abstract: 124 resistor SP508EEF-L
Contextual Info: SP508E Rugged 20Mbps, 8 Channel Multi-Protocol Transceiver with Programmable DCE/DTE and Termination Resistors FEATURES Now Available in Lead Free Packaging • 20Mbps Differential Transmission Rates Refer to page 7 for pinout • 15kV ESD Tolerance for Analog I/Os

GP144

Abstract: CR10
Contextual Info: PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFS45B2527B 2.5 - 2.7GHz BAND 30W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFS45B2527B is an internally impedance-matched

MC14538

Abstract: CD14538BMS CD4098B CD4538B MC14538 equivalent
Contextual Info: CD14538BMS TM CMOS Dual Precision Monostable Multivibrator November 1994 Features Description • High-Voltage Type 20V Rating • Retriggerable/Resettable Capability • Trigger and Reset Propagation Delays Independent of RX, CX • Triggering From Leading or Trailing Edge

Contextual Info: SP509 Rugged 40Mbps, 8 Channel Multi-Protocol Transceiver with Programmable DCE/DTE and Termination Resistors • Ultra Fast 40Mbps Differential Transmission Rates Available ■ Improved ESD Tolerance for Analog I/Os with 15kV HBM. ■ Internal Transceiver Termination Resistors for V.11 and V.35

Contextual Info: User’s Guide March 2012 LMK00304EVM User’s Guide 1. General Description This user guide describes how to set up and operate the LMK00304 evaluation module EVM . The LMK00304 is a 3-GHz, 4-output differential clock buffer intended for high frequency, low additive jitter clock

SP510ECF-L

Abstract: sp510e
Contextual Info: SP510E ULTRA HIGH SPEED MULTIPROTOCOL TRANSCEIVER JULY 2012 REV. 1.0.0 GENERAL DESCRIPTION FEATURES The SP510E is a highly integrated physical layer solution that is configurable to support multiple serial standards. It incorporates eight drivers and eight

CM32

Abstract: MGFL48V1920 GR-70
Contextual Info: Preliminary MITSUBISHI SEMICONDUCTOR «^QaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

Contextual Info: PRELIMINARY SP508E Rugged 20Mbps, 8 Channel Multi-Protocol Transceiver with Programmable DCE/DTE and Termination Resistors FEATURES Now Available in Lead Free Packaging • 20Mbps Differential Transmission Rates Refer to page 7 for pinout • 15kV ESD Tolerance for Analog I/Os

Contextual Info: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,

cts 10mhz oscillator

Abstract: 0805R104K9BB 16 pin O/E/N relays db-26 connector pin assignment EIA-530A RS-449 SP3508
Contextual Info: PRELIMINARY SP3508 Rugged 3.3V, 20Mbps, 8 Channel Multiprotocol Transceiver with Programmable DCE/DTE and Termination Resistors FEATURES • Fast 20Mbps Differential Transmission Rates ■ Internal Transceiver Termination Resistors for V.11 & V.35 ■ Interface Modes:

cts 10mhz oscillator

Abstract: EIA-530A RS-449 SP509
Contextual Info: SP509 Rugged 40Mbps, 8 Channel Multi-Protocol Transceiver with Programmable DCE/DTE and Termination Resistors FEATURES • Ultra Fast 40Mbps Differential Transmission Rates Available ■ Improved ESD Tolerance for Analog I/Os with 15kV HBM. ■ Internal Transceiver Termination Resistors for V.11 and V.35

MCR03EZHJ

Abstract: 5045-03a Fujitsu VCO MB1500EB00A MB1500EB20B MB15F72UV MB15F73UV MB15F74UV TP10 MCH185C102K
Contextual Info: Fujitsu PLL Frequency Synthesizer ICs MB1500EB20B Evaluation Board Manual -MB1500EB20BPLL Frequency Synthesizer IC MB15F7xUV MB15F3xUV For BCC Package -1- 2003.Feb.Rev0.1 Fujitsu PLL Frequency Synthesizer ICs MB1500EB20B Evaluation Board Manual 2003.Feb.Rev0.1

free 1N4007

Abstract: 1N4007 600w switch mode power supply circuit diagram NTC 2.2K adc 1N4004 1N4007 water level control working free D41N4004
Contextual Info: Data Sheet PT8A341x Water Filled Radiator |

MC14538 equivalent

Contextual Info: v Tex a s In s t r u m e n t s CD14538B Types Data sheet acquired from Harris S em iconductor S C H S093 CMOS Dual Precision Monostable Multivibrator High-Voltage Types 20-Volt Rating Features: • Retriggerable/resettable capability m Trigger and reset propagation delays

EIA-530A

Abstract: SP508
Contextual Info: SP508 Rugged 20Mbps, 8 Channel Multi-Protocol Transceiver with Programmable DCE/DTE and Termination Resistors FEATURES • 20Mbps Differential Transmission Rates ■ 15kV ESD Tolerance for Analog I/Os ■ Internal Transceiver Termination Resistors for V.11/V.35

6n60c

Abstract: transistor 13005 electronic ballast 36W mosfet 6n60c 6n60c ic 13005 ballast Electronic ballast 36W using 13005 transistor transistor 9014 transistor Electronic ballast 13005 ELECTRONIC BALLAST 6 LAMP SCHEMATIC
Contextual Info: BCD Semi Ltd Co. AP1661 2*36W ballast Demo Board Manual Content: 1. Description 2. Specifications 3. Schematics of the Demo Board 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result PROPRIETARY & CONFIDENTIAL ADVANCED ANALOG CIRCUITS CORPORATION

sp510

Abstract: SP510E EIA-530A RS-423 SP510EM SP-510 CONNECTOR DB26
Contextual Info: SP510 ULTRA HIGH SPEED MULTIPROTOCOL TRANSCEIVER DECEMBER 2009 REV. 1.0.0 GENERAL DESCRIPTION FEATURES The SP510 is a highly integrated physical layer solution that is configurable to support multiple serial standards. It incorporates eight 8 drivers and eight

RN06

Abstract: 2609A RC-2609A
Contextual Info: Cal-Chip Electronics, Incorporated RN SERIES Thin Film Chip Resistors FEATURES • Surface Mount Devices SMD • Precision Tolerances of ±0.5% to ±0.1% • Temperature Coefficients of ±50ppm/°C and ±25ppm°C • Precision Performance • Space Saving Construction

DA12 16

Abstract: SK1N1 T1-1TCUP RX433 n1 sot23 SDA04HOSK RC0603 Hp TX2 SOT23 2A8 SOT23-BEC
Contextual Info: 4 3 1 2 REVISIONS JP9 DVDD JP15 RXEN_SYNC JP14 D REV DESCRIPTION DATE APPROVED B Customer Version NO Socket 0307.09 JRM D JP58 AWG_RXTXEN 1 TX0 2 RX5 3 RX4 4 RX3 1 DVDD RX2 2 AWG_TXSYNC RX1 3 DSP_RXTXEN RX0 4 10K R16 RC0603 10K R8 RC0603 R9 33 RC0603 JP1 JP2

Contextual Info: 7MBR75GE060 IGBT Modules IGBT MODULE 600V / 75A / PIM Features • High Speed Switching · Voltage Drive · Low Inductance Module Structure · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

Contextual Info: STA011 L-band RF front-end for digital radio Preliminary Data Features ● Single chip receiver for satellite and terrestrial digital radio ● Super-heterodyne tuner with low IF output ● High input intercept point ● Low noise IC ● RF image rejection mixer

diode IN4001 equivalent

Abstract: resistor 330 Ohm current mirror resistor 510 ohm diode IN4001 r21 diode P-N-P CURRENT MIRROR "resistor 330 Ohm" ADN2841 smd transistor K2 pnp digital
Contextual Info: a HSN TECHNICAL NOTE - HSN TN007 ADN2841 EVALUATION KIT Introduction: This Technical Note describes the ADN2841 laser diode driver evaluation kit. The evaluation kit is a demonstration board that provides electrical evaluation of the ADN2841. This document describes how to configure the

42AA

Abstract: MGF0952P mgf09
Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:

l9122

Abstract: IT8510 asus RC415ME 12G140001089 ATI SB600 CON3603 RC415M ISL6262CRZ foxconn
Contextual Info: 5 4 3 2 1 T12R Block Diagram FAN + SENSOR MAX6657MSA PAGE 4 V2.0 CLOCK GEN ICS951463 CPU YONAH-CM D PAGE 5 DISCHARGER CIRCUIT D PAGE 37 PAGE 2,3 Power On Sequence FSB 533MHz PAGE 40 DC/BATT IN LVDS & INV ATI RC415M PAGE 12 CRT & TV OUT PAGE 13 PAGE 41 DDR2-533