514100B Search Results

Siemens MTD 95 A 08 N

Contextual Info: SIEM ENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 Advanced Inform ation • 4 194 304 w ords by 1-bit organization • 0 to 70 “C operating tem perature • Fast access time RAS access time:

Contextual Info: SIEMENS 4Mx1-Bit Dynamic RAM Low Power 4Mx1-Bit Dynamic RAM HYB 514100BJ -60/-70/-80 HYB 514100BJL -60/-70/-80 Advanced Inform ation • • • • • • • • • • • • • 4 194 304 w ords by 1-bit organization 0 to 70 "C operating tem perature

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23409B /B L -xxD S9 is a fully decoded 4,194,304-w ord x 9-bit CM O S D ynam ic Random Access Memory Module com posed of nine 4-M b DRAM s in SOJ M SM 514100B/BL packages, mounted

Contextual Info: SIEMENS 4 M X 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 5141OOBJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time:

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

Contextual Info: HB56D836 Series 8 ,3 8 8 ,6 0 8 -w o r d x 3 6 -b lt H ig h D e n s ity D y n a m ic R A M M o d u le The HB56D 836 is a 8 M x 36 dynam ic RAM module, mounted 16 pieces of 16-Mbit DRAM HM 5117400AS sealed in SOJ package and 8 pieces of 4-M bit DRAM (H M 514100B S/C S)

SIEMENS rwc 62

Abstract: Q67100-Q1029
Contextual Info: SIEM E N S 4M X 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 ”C operating temperature • Fast Page Mode Operation • Performance: -50 -60 ¿RAC

D0713

Abstract: siemens 10e 514100
Contextual Info: SIEM E N S 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 Advanced Inform ation • 4 194 304 words by 1-bit organization • 0 to 70 “C operating temperature • Fast access time RAS access time:

DS36

Contextual Info: O K I Semiconductor MSC23436B-XXBS36/DS36 4,194,304-Word by 36-Bit DRam Module: Fast Page Mode DESCRIPTION The OKI M SC 23436B-xxBS36/D S36 is a fully decoded 4,194,304-w ord x 36-bit CM OS Dynamic Random Access Memory M odule com posed of thirty-six 4-M b DRAM s in SOJ M SM 514100B packages mounted

Contextual Info: O K I Semiconductor MSC23409B/BL-XXDS9 4,194,304-Word by 9-Bit DRAM Module: Fast Page Mode D ESC R IPTIO N The OKI M SC 23409B /B L -xxD S9 is a fully decoded 4,194,304-word x 9-bit CM OS D ynam ic Random Access Memory Module com posed of nine 4-Mb DRAMs in SOJ M SM 514100B/BL packages, mounted

IN60M

Contextual Info: SIEMENS HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM A d v a n c e d In fo rm a tio n • 4 194 3 0 4 w o rd s by 1 -b it o rg a n iz a tio n L o w p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re

HYB514100

Contextual Info: SIEMENS 4 M X 1-Bit Dynamic RAMHYB 514100BJ/BT-60/-70/-80 Low Power 4 M x 1-Bit Dynamic RAM HYB 514100BJL/BTL-60/-70/-80 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time:

Contextual Info: SIEMENS 4Mx1-Bit Dynamic RAM Low Power 4Mx1-Bit Dynamic RAM HYB 514100BJ -60/-70/-80 HYB 514100BJL -60/-70/-80 Advanced Inform ation • • • • • • • • • • • • • 4 194 304 words by 1-bit organization 0 to 70 "C operating temperature

Contextual Info: O K I Semiconductor MSC23836-XXBS24/DS24 í!'T C ítóíi® ¡rf 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23836-xxBS24/D S24 is a fully decoded 8,388,608-w ord x 36-bit CM OS Dynamic Random Access Memory Module com posed of sixteen 16-Mb DRAMs in SOJ M SM 5117400 packages and eight 4Mb DRAMs in SOJ (M SM 514100B) packages mounted with tw enty-four 0.2|j,F decoupling capacitors on a

WCs MARKING

Abstract: 514100BJ Q67100-Q759 Q67100-Q971 SMD MARKING CODE RAC code marking rah SMD MARKING code ASC
Contextual Info: 4M x 1-Bit Dynamic RAM HYB 514100BJ-50/-60 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 tRAC RAS access time 50 60 ns tCAC CAS access time 13 15

514100

Abstract: hyb514100
Contextual Info: 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 ˚C operating temperature • Fast Page Mode Operation • Performance: -50 -60 -70 tRAC RAS access time

Q67100-Q765

Abstract: 514100
Contextual Info: SIE M E N S 4 M x 1-Bit Dynamic RAM Low Power 4 M x 1-Bit Dynamic RAM HYB 514100BJ/BT-60/-70/-80 HYB 514100BJL/BTL-60/-70/-80 A d v a n c e d In fo rm a tio n • 4 194 304 words by 1-bit organization • 0 to 70 ’C operating temperature • Fast access and cycle time

023SbDS

Contextual Info: SIEMENS 4M x 1-Bit Dynamic RAM HYB 514100BJ-50/-60 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation ♦. Performance: -50 -60 50 60 ns o > o ?RAC RAS access time CAS access time

Contextual Info: SIEMENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Inform ation • 4 194 304 words by 1-bit organization • 0 to 70 C operating temperature • Fast Page Mode Operation • Performance: -50 -60 ^RAC RAS access tim e

Contextual Info: SIEMENS 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 'C operating temperature • Fast Page Mode Operation • Performance: f R AC -50 -60 -70

HYB39S16400T

Abstract: hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
Contextual Info: SIEMENS 4M Product View 4M Product View 4M DRAM 1M X 4 4M X 1 256kX 16 HVB 314100BJ/BJL HYB 314400BJ/BJL HYB314405BJ/BJL HYB 314171BJ/BJL HYB 314175BJ/BJL HYB 514100BJ/BJL HYB 514400BJ/BJL HYB 514405BJ/BJL HYB 314265BJ/BJL HYB 514171 BJ/BJL HYB 514175BJ/BJL

MAS 10 RCD

Abstract: A0-A10-HSS
Contextual Info: O K I Semiconductor MSC23408B/BL-XXDS8 4,194,304-Word by 8-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 23408B /B L -xxD S8 is a fully decoded 4,194,304-w ord x 8-bit CM O S D ynam ic Random Access Memory Module composed of eight 4-Mb DRAM s in SOJ M SM 514100B/BL packages mounted

Q67100-Q2006

Abstract: Q67100-Q982 514100BJ
Contextual Info: SIEMENS 4M X 36-Bit Dynamic RAM Module HYM 364020S/GS-60/-70 Preliminary Inform ation 4 194 304 words by 36-Bit organization alternative 8 388 608 words by 18-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access tim e