512R Search Results

512r

Abstract: 32R512-9CL 32R512 32R512R-9CL 32R512M-8CW 32R512RM-8CW hbx 300 y
Contextual Info: ¿ m c o n s m S S I 3 2 R 5 1 2 /5 1 2 R 8 & 9-Channel Thin Film Read/Write Device ta n s A TDK Group/Company October 1992 FEATURES DESCRIPTION The SSI 32R512/512R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a

panasonic ag

Abstract: panasonic ASR panasonic fj PANASONIC Vu SERIES MN41V4260DSJ-06 MN41V4260DSJ-07 MN41V4260DTT-06 MN41V4260DTT-07 3CDT
Contextual Info: Panasonic 4M 262,144-word x 16bit Dynamic RAM 3.3V ± 0.3V 2CAS, 1WE 512Refresh Fast Page Mode P/N: MN41V4260DSJ-06 MN41V4260DSJ-07 MN41V4260DTT-06 MN41V4260DTT-07 The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a

32R512

Contextual Info: SSI 32R512/512R m m 1 8 & 9-Channel Thin Film Read/Write Device s v s tm A TDK Group/Company October 1992 DESCRIPTION FEATURES The SSI 32R512/512R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a

Contextual Info: MITSUBISHI LSIs ,beü!*inAB M 5M 512R 8 8 CJJP-1 0 ,-1 2 ,-1 5 1048576-BIT 131072-WQRD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The 512R88C is a family of 131072-word by 8-bit static RAMs, fabricated with the high performance CMOS silicon gate

Contextual Info: M W n M k m S S I 3 2 R 5 1 2 /5 1 2 R 8 & 9-Channel Thin Film Read/Write Device s July, 1990 DESCRIPTION FEATURES The SSI 32R512/512R Read/Write devices are bipolar monolithic integrated circuits designed for use with two terminal thin film recording heads. They provide a

DQ8-DQ15

Abstract: MN41V4265DTT-06 panasonic ag MN41V4265DSJ-06 MN41V4265DSJ-07 MN41V4265DTT-07 PANASONIC Vu SERIES
Contextual Info: Panasonic 4M 262,144-word x 16bit Dynamic RAM 3.3V ± 0.3V 2CAS, 1WE 512Refresh EDO Page Mode P/N: MN41V4265DSJ-06 MN41V4265DSJ-07 MN41V4265DTT-06 MN41V4265DTT-07 The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a

1rf510

Abstract: 1RF51
Contextual Info: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ

LDS-C512RI

Contextual Info: PART NU M BER REV. LD S-C 512R I A UNCONTROLLED DOCUMENT REV, E.C.N. NU M BER AND REVISION COMMENTS DATE E.C.N. #1 0 B R D R . & REDRAWN, A ELECTRO-OPTICAL CHARACTERISTICS Ta =25'C PARAMETER MIN TYP PEAK WAVELENGTH lf=10mA MAX UNITS 565 2.6 Vf 5,0 AXIAL INTENSITY

1RF511

Abstract: IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51
Contextual Info: IRF510/511/512/513 IRF51 OR/511R/512R/513R S3 HARRIS N-Channei Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -22 0 A B • 4.9A and 5.6A , 8 0 V - 10 0V TOP VIEW • fD S ion = 0 .5 4 0 and 0 .7 4 fl DRAIN • S ingle Pulse Avalanche E nergy R ated*

Contextual Info: Panasonic 4M 262,144-word x 16bit Dynamic RAM 3.3V ± 0.3V 2CAS, 1WE 512Refresh Fast Page Mode P/N: MN41V4260DSJ-06 MN41V4260DSJ-07 MN41V4260DTT-06 MN41V4260DTT-07 The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a

TS-PDSO-G16

Contextual Info: MC9S08QE8CTGR Information General information Package information Environmental and Compliance information Manufacturing and Qualification information Ordering information General Information Parameter Value Part Number MC9S08QE8CTGR Description 8KB FLASH;512RAM

MN41V4265DTT-06

Contextual Info: Panasonic 4M 262,144-word x 16bit Dynamic RAM 3.3V ± 0.3V 2CAS, 1WE 512Refresh EDO Page Mode P/N: MN41V4265DSJ-06 MN41V4265DSJ-07 MN41V4265DTT-06 MN41V4265DTT-07 The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

LDD-C512RI

Contextual Info: REVISIONS DATE 4 -2 2 -9 8 E.C.N. # 1 0 B R D R , REV 8. R E I R A V N . / A 4 . 5 0 Ì0 . 7 5 8.00 [0 .3 1 5 ] [0,177±0,030] 15.24 [0,60011 19.00 CO .7 4 93 D IG IT D ETAIL DIG 1 14Ï * 9 13 CO M M O N CATHODE DIG 1 DIC 2 DP 16 O O <i <i 15 3 2 1 18 DIG 2

AT27LV512

Contextual Info: 512R Features • • • • • • • • • • • Wide Power Supply Range, 3.0 V to 5.5 V Fast Read Access T im e-120 ns Compatible with JEDEC Standard AT27C51.2R Low Power 3.3-Volt CMOS Operation 20 jiA max. Standby 29 mW max. Active at 5 MHz for Vcc = 3.6 V

ADD8502

Contextual Info: PRELIMINARY TECHNICAL DATA a Integrated LCD Grayscale Generator ADD8502 Preliminary Technical Data FEATURES 2 Mask Programmable Sets of 5 Reference Levels Dual 10-Bit DACs for Flicker Offset and Range Adjustment Integrated VCOM Switching Single-Supply Operation: 5.0 V

D42274

Contextual Info: SEC pPD42274 Dual-Port Graphics Buffer NEC Electronics Inc. Description Features The ¿/PD42274 is a dual-port graphics buffer equipped with a 256K x 4-bit random access port and a 512 x 4-bit serial read port. The serial read port is connected to an internal 2048-bit data register through a 512 x 4-bit

NEC 12F

Abstract: D42275
Contextual Info: NEC ffPD42275 Video RAM NEC Electronics Inc. Description Features The ¿/PD42275 is a dual-port g raphics buffer equipped with a random a cce ss port and a serial read port. The serial read port is co nn ected to an internal 2048-bit data register through a 256 x 8 -bit serial read output

KM658128

Contextual Info: m s« KM658128 SAMSUNG Semiconductor 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM May 1991 FEATURES DESCRIPTION • Fast Access Time: — CE Access Tim e. 80, 100, 120ns Max — Cycle Time Random Read/Write Cycle Time .130, 160, 190ns (Max)

tcon mini-lvds

Abstract: mini-lvds source driver tcon with lvds input lvds 20 pin lcd panel TFP74x3 TFP7433 TPF7443 mini-LVDS and TFT-LCD Timing Controller 2045G Tcon minilvds
Contextual Info: TFP7423, TFP7433, TFP7443, TFP7453 TFT LCD PANEL TIMING CONTROLLER WITH mini-LVDS AND FlatLink SLDS140A – APRIL 2001 – REVISED JULY 2002 D Support for 6-Bit as Well as 8-Bit Video D D D D D D D Support for 2-Level and 3-Level Gate Inputs, With On-Chip Dithering

STV3500

Abstract: samsung tv tuner IC 7812 TV STV3500 tv
Contextual Info: STV3500 Integrated Up-Converter with 32-bit CPU Core with Video Enhancers and Bitmap On-Screen Display PRODUCT PREVIEW CLKXTP CLKXTM YSI/CTI Picture Compositor Background & Cursor Planes TV Peripherals ST20 32-bit CPU Core 100 MHz, 8 kB SRAM 4 kB I-Cache 4 kB D-Cache

Contextual Info: MITSUBISHI LSIs 1998.6.18 Ver.A P lU t 512R88DJ-10,-12,-15 ÌS M A R Y Notice: This is not a final specification. Some parametric limits are subject to change 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The 512R88DJ is a family of 131072-word by 8-bit

TLS2271

Abstract: 32H6742 schematic diagram of seagate hard disk pcb tls2270 TLS2247 TLS2251 TLS2245 1575R SP4107A 32H6910
Contextual Info: TABLE OF CONTENTS How to use the Data CD-ROM Texas Instruments Storage Products Overview Alpha/Numeric Index 2000 Short Form Catalog Discontinued Parts List DSP and ASIC Quality and Technology HDD Read/Write Amplifiers MR Head Read/Write Thin-Film Head Read/Write

Contextual Info: NEC NEC Electronics Inc. JLIPD482444, 482445 4M Video RAM Preliminary Information_ Description The ¿/PD482444 fast-page and /UPD482445 hyper-page video RAMs have a random access p o rt and a serial read/write port. The serial read/write p o rt is connected