1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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DK101/D.
0020-frJ
1RFZ40
1RF150
MTP25N10E
mth7n50 Transistor
MTP35N06E
BUZ80a equivalent
buz90 equivalent
MTP40N06M
MFE9200
MTH7N50
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1rf510
Abstract: 1RF51
Contextual Info: • M3DE271 0DS3Tfl3 g H A R R IS ÖÖO ■ HAS IRF510/511/512/513 IRF51OR/511R/512R/513R N-Channel Power MOSFETs Avalanche Energy Rated* August 19 91 Package Features • T 0 -2 2 0 A B 4.9A and 5.6A, 80V - 100V TOP VIEW • rD S °n) = 0 -5 4 0 and 0 .7 4 ÎÏ
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M3DE271
IRF510/511/512/513
IRF51OR/511R/512R/513R
IRF510,
IRF511,
IRF512,
IRF513
IRF510R,
IRF511R,
IRF512R
1rf510
1RF51
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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IRF510 application note
Abstract: irf511 VQE22 Gate Drive circuit for irf510 VQE 22 N0540 AN975 IRF510
Contextual Info: HE 0 | MÛS54S2 0 0 0 0 4 3 4 3 | Data Sheet No. PD-9.325J 7 INTERNATIONAL R E C T I F I E R * 7 INTERNATIONAL RECTIFIER 7 - / / I«R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF510 IRF511 IRF5ÌS IRF513
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S54S2
IRF510
IRF511
IRF513
O-220AB
C-189
IRF510,
IRF511,
IRF512,
IRF513
IRF510 application note
VQE22
Gate Drive circuit for irf510
VQE 22
N0540
AN975
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1RF511
Abstract: IRFS10 IRF 4020 1RF510 IRF 511 MOSfet Irf510 mosfet circuit diagram 1rf510 n-channel IRF511 LS 2512 04 IRF51
Contextual Info: IRF510/511/512/513 IRF51 OR/511R/512R/513R S3 HARRIS N-Channei Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -22 0 A B • 4.9A and 5.6A , 8 0 V - 10 0V TOP VIEW • fD S ion = 0 .5 4 0 and 0 .7 4 fl DRAIN • S ingle Pulse Avalanche E nergy R ated*
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IRF510/511/512/513
IRF510R/511R/512R/513R
IRFS10,
IRF511,
IRF512,
IRF513
IRF510R,
1RF511R,
IRF512R
IRF513R
1RF511
IRFS10
IRF 4020
1RF510
IRF 511 MOSfet
Irf510 mosfet circuit diagram
1rf510 n-channel
IRF511
LS 2512 04
IRF51
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JRF510
Abstract: 1RF511
Contextual Info: IR F510/51 1 /5 1 2 /5 1 3 2 ] H A R R IS IR F51 O R /5 1 1 R /5 1 2 R /5 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 2 0 A B • 4 .9 A a n d 5 .6 A , 8 0 V - 1 0 0 V T O P V IE W • rD S ° n = 0 - 5 4 i i a n d 0 .7 4 £1
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F510/51
IRF510,
IRF511,
IRF512,
IRF513
IRF51
IRF511R,
IRF512R
IRF513R
FIGURE14b.
JRF510
1RF511
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