51256 Search Results

Contextual Info: intei 51256 HIGH SPEED 32K x 8-BIT STATIC RAM 51256-20 Max Access Time ns 51256-25 51256-30 51256-35 20 25 30 35 Max. Active Current (mA) 100 100 100 100 Max Standby Current (mA) 30 30 30 30 Static Operation — No Clock/Refresh required Equal Access and Cycle Times

51256

Abstract: 1024X256 51256-20
Contextual Info: intei 51256 HIGH SPEED 32K x 8-BIT STATIC RAM 51256-20 Max Access Time ns 51256-25 51256-30 51256-35 20 25 30 35 Max. Active C urrent (mA) 100 100 100 100 Max Standby C urrent (mA) 30 30 30 30 Static Operation — No Clock/Refresh required 2V Data Retention Option Available

51256S

Abstract: 1004T
Contextual Info: in te i* 32K X 51256S/L 8-BIT CMOS STATIC RAM 51256S/L-07 51256S/L-10 Unit 70 100 ns Chip Select Access Time tAcs 70 100 ns Output Enable Access Time (tQE) 40 50 ns Address Access Time (ìa a ) • Static Operation — No Clock/Refresh Required ■ Power Down Mode

51256

Abstract: 51256-20
Contextual Info: intei 51256 HIGH SPEED 32K x 8-BIT STATIC RAM 51256-20 Max Access Time ns 2 0 Max. Active Current (mA) Max Standby Current (mA) 51256-25 51256-30 51256-35 25 30 35 1 0 0 1 0 0 1 0 0 1 0 0 30 30 30 30 Static Operation — No Clock/Refresh required 2V Data Retention Option Available

51256P

Contextual Info: 51256P 35/45/55 SONY 262,144-word x 1 bit High Speed CMOS Static RAM Description C XK 51256P is 2 6 2 ,1 4 4 - w o r d x 1 b it h ig h speed CM OS s ta tic RAM o rg a n ize d as 2 6 2 ,1 4 4 -w o rd by 1 b it a nd o p e ra te s fro m a s in g le 5 V su p p ly .

51256S/L

Contextual Info: intJ 51256S/L 32K x 8-BIT CMOS STATIC RAM 51256S/L-07 51256S/L-10 Unit Address Access Time îa a 70 100 ns Chip Select Access Time (tAcs) 70 100 ns Output Enable Access Time (toE) 40 50 ns • Static Operation — No Clock/Refresh Required ■ Power Down Mode

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

Contextual Info: aw— 2 6 2 ,1 4 4 am. VJCRDS x 9 B IT DYNAMIC RAM MODULE D E SCP.!?T I0f-! T he T K M 9 2 5 0 0 A S of is a 2 6 2 ,1 4 4 w o rd s b y 9 b i t s d y n a m ic RAM n o d u l e w h ic h a s s em b le d T C 5 1 4 2 5 6 A J and 1 pcs o f T M M 51256T on the p r i n t e d c i r c u i t b o a r d .

51256SL

Abstract: 51256SL-10
Contextual Info: intJ fÊË 51256SL 256K 32K x 8 CMOS SLOW STATIC RAM • Performance Range Symbol Parameter 51256SL-10 Unit Ua Address Access Time 100 ns tACS Chip Select Access Time 100 ns tOE Output Enable Access Time 50 ns ■ Static Operation - N o Clock/Refresh Required

Contextual Info: in t e i 51256S/L 32K x 8-BIT CMOS STATIC RAM 512 56 S /L-0 7 51256 S /L-1 0 U n it Address Access Tim e Oa a 70 100 ns Chip Select Access Tim e Oa c s ) 70 100 ns O utput Enable Access Time îo e ) 40 50 ns • Static Operation — No Clock/Refresh Required

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256

WAGO

Abstract: wago 750 wago 2060 WAGO 2 1
Contextual Info: Surface Mount Terminal Strips with Push-Buttons Series 2060 Surface Mount Terminal Strips with Push-Buttons Pin Spacing 4 mm 2060 Series​ ​• Surface mount terminal strips with CAGE CLAMP S connection and push-buttons • Direct push-in of solid conductors​

mts142

Abstract: SCHEMATIC 1 EP13-SMD MtS140
Contextual Info: DigitalTelecom Metalink HDSL recommendations Features • RoHS compatible versions available • Compatible with Metalink chipsets • Designed to meet IEC950 requirements • Good total harmonic distortion characteristics • Optimized for size and performance

AXX750WPS

Contextual Info: 750W power supply AXX750WPS Compare Queue 0 Home Intel Server Products Page 1 of 1 English Send Feedback Server Accessories Power Options Type Here to Search Products 750W power supply AXX750WPS 750W power supply AXX750WPS SPECIFICATIONS All Essentials

selector switch actuator

Abstract: 61-8430-22 440.01 pcb 61-0040.02 9221 MARKING 9236 switch thermal capacitor shc EN 60947-5-5 red indicator lamp 24 VDC EN 60947-5-1 kaba
Contextual Info: Switches and Indicators 61 Switches and Indicators Index Series 61 Description Page 425 Product Assembly Page 426 Product Range - pushbuttons for standard mounting - pushbuttons for flush mounting - accessories / spare parts 424 01.2002 Page 427 Page 434 Page 440

10-2J06

Abstract: 51-336.025D2 511240 52-271.0252 52-473.036 eao 51-256.025D2 514010 51-138.025D2 51-272.0252 51296025d
Contextual Info: EAO – Your Expert Partner for Human Machine Interfaces EAO Product Information Series 51 Switches and Indicators 51 Contents 51 Description . 3 Product Assembly . 4

84-8512

Abstract: 03-631-011 31F4 02-810.001 eao 31-022.005 02.617.011 52-473.036 eao 96-323.837 ir tk 69 rectangular connector
Contextual Info: JH O #% c a u " World Class Switching Products EAO CERTIFIED ISO 9001 General Catalog 102 T E M P T R O L IN S T R U M E N T S L IM IT E D EAO adds style and value to your product 6800 Kitimat Road, Unit D-28 MISSISSAUGA, ONTARIO L5N 5M1 Te l: 9 0 5 8 5 8 -9 74 3

HB561409A

Contextual Info: HB561409 Series 262,144-word x 9-bit Dynamic Random Access Memory Module The HB561409 is a 256k x 9 dynamic R A M module, mounted 9 pieces of 256k-bit D R A M 51256CP sealed in PL C C package. An outline of the HB561409 is 30 pin single in-line package having two types; Lead type (HB561409A) and Socket

HM51256

Abstract: HM51256P 51256LP 51256c
Contextual Info: 51256 Series-2 6 2 1 4 4 -w o r d x t -bit C M O S Dynam ic Random A ccess M em o ry •FEATURE • • • 262, 144 word x 1 bit DRAM Double layer Poly-Si/Policide Process, high performance CMOS Power supply voltage: 5V ± 10% • Access time Row access time: 8 5 /1 0 0 /1 2 0 /1 50ns

Contextual Info: 51256/ CMOS 256K 32K x 8 Static RAM FEATURES DESCRIPTION • 32,768 x 8 bit organization The 51256 is a 256K bit static RAM organized as 32,768 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times: 100/120 ns (MAX.)

Contextual Info: 51256 CMOS 256K 32K x 8 Static RAM FEATURES DESCRIPTION • 32,768 x 8 bit organization The 51256 is a 256K bit static RAM organized as 32,768 x 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology.