51018 Search Results

ASTM D-3330

Abstract: 51018 TM 51018 3M Electrical Tape
Contextual Info: Technical Data 3M Dielectric Tape 51018 Developmental Status Notice 3M Dielectric Tape 51018 is a 3M developmental product. It is currently available on a limited basis. To discuss your use, please contact your local 3M Technical Service Representative.

51018SL

Abstract: 51018SL-10 A1022 51018SL10
Contextual Info: intei* 51018SL 1M 131,072 x 8 CMOS SLOW STATIC RAM • Performance Range Parameter Symbol 51018SL-10 Unit *AA Address Access Time 100 ns t C 01/ t C02 Chip Select Access Time 100 ns tOE Output Enable Access Time 50 ns Standby Current: 100 /xA (max) Fully Static Operation

PB120A

Contextual Info: ued ‘ 18/19 LED Cluster, 25mm Edison Screw Based Lamps Packages Replaces Incandescent # Application Specific 660nm U ltra Red G aA IA s/G a A IA s Part Number Input Voltage 51018-0UR-014N 12/14V 51019-0UR-024N 24V S1019-0UR-120AÑ 120VÄC S1019-0UR-240AN 240VAC

transistor A7

Abstract: B446 2DI5OZ-14O T151 50Aj transistor B446
Contextual Info: 2DI5OZ-14OC50A POWER TRANSISTOR MODULE • F e a tu re s • H i g h V o lt a g e • 7 ' J —f r - • A S O à 'T S l' • fê ü iîfé Kfàflft i I n c l u d i n g F re e W h e e l i n g D i o d e E x c e lle n t S a fe O p e r a t i n g A re a I n s u la t e d T y p e

rjh igbt

Abstract: HF IGBT 7MBP150RA060
Contextual Info: FUJI a - 7 D7 ^ h [IT L S E T T Ir jO E FUJI NEW SEMICONDUCTOR PRODUCTS 1^9 IGBT-IPM 14# Jk ^ 3 6 0 0 V /15 0 A /7 in one-package R series 7MBP150RA060 Features IPM-N y V - X t S fô '& V & Z / ^ y ' r - - y IG B T 5 1 7 y < D T j f à & ì & m m m n t c ¿

A0764

Abstract: 2SJ314-01L T151 Scans-0063210
Contextual Info: 2SJ314-01L, S FUJI POWER MOS-FET P-CHANNEL SILICON POWER MOS-FET _ -FAP-III SERIES • Features Outline Draw ings • Hiyh current • Low on-resistance • No secondary breakdown • Low driving power • Hiyh forward Transconductance

MBH60D-090A

Abstract: 1MBH60D 1MBH60D-090A 30S3 H150 aft7
Contextual Info: 1MBH60D-090A g ilG B T IGBT : Outline Drawings INSULATED GATE BIPOLAR TRANSISTO R ^ Features • i H i g h Speed Switching • fëtâifllïJiE Low Saturation Voltage • hÎ SÎ ÆÎ MOSV— Hi gh Impedance Gate »/j\ggy{.y^ - _ S m a l l Package : Applications

ET-188

Abstract: ET188 T460 T760 A209
Contextual Info: ET188 ' Ë ± ' < T7 - Y s7 > i ï X 9 TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON N P N = Â tt« ÿ V - * J& HIGH VOLTAGE, HIGH C U R R E N T , HIGH S P E E D S W IT C H IN G • I Outline Drawings I Features • fijliJE High voltage • ffiiffHifc

ERG27-10

Abstract: B2-18 ERG27 ERG77 ERG77-10 T151 T930
Contextual Info: ERG27*ERG77 3 oa •1000V *±'*7-^*-K • ■ O utline D raw in g s FAST RECOVERY DIODE • Features • i'a 's ’?-"/'? • Glass passivated chip High voltage • Stud mounted : Applications • Switching power supplies • M 7 fJ —fr'fJU Free-wheel diode

ELLS 110

Abstract: FR 151 diode 30S3 ERD75 lftb
Contextual Info: ERD75 2 oa —K : Outline Drawings FAST RECO VERY DIODE i Features Planer chip • V 7Y l) i J ' <1) — • z.9"A'Tfc Soft recovery type Stud mounted • E JiS s : Applications • Switching power supplies • ^^i)V • W t i& S i& S / lE « ; Free-wheel diode

fuji ipm

Abstract: C6003 7MBP100RA060 T151 IGBT .XT
Contextual Info: !•=*?■ ■ V # ■■■■% ' FU JI M U J M S I Ji iG B T 6 0 0 V /1 0 0 A /7 in one-package R series 7MBP100RA060 Features 'J ~ X t IP M -N V OE a±«i FUJI NEW SEMICONDUCTOR PRODUCTS IGBT-IPM u ’IjS S& 14<7> * 5 M 7 - V V 7 “w T j t i f f * 1 1 4 0 3 1 :1

ERD24

Abstract: ERD74 P930 T151 T460
Contextual Info: E R D 2 * E 4 R D 7 4 i 2 A 3j"— K * ± ' < 7 - 5^ 3!— K • : Outline Drawings FAST RECOVERY DIODE : Features • Grass passivated chip • High reverse voltage capability • X f v F JY t Stud mounted ■ E li& : Applications • "/?■>?M M •

Contextual Info: 2SK727-01 FUJI POWER MOS-FET SERIES N-CHANNEL SILICON POWER MOS-FET p • Features ■ O u tlin e Drawings j • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving pow er • High voltage • Avalanche-proof ■A pplications

Contextual Info: 1MBI400F-060 400A *± IGBT IGBT MODULE Features • l£ ta fn ^ /± L ow S a tu ra tio n V o lta g e • f lf f iB if r ( M O S ^ — h fljiil) • V o lta g e D rive V a rie ty o f Pow er C apacity Series : Applications > '< — 9 • A C , D C 1 f — i£ ~ 7 's ~ f

SH250

Abstract: 2SC3550
Contextual Info: 2SC3550 È ± '< 7 TRIPLE D IFFUSED PLANER TYPE N P N H B f ô j ÿ T V — tW i HIGH VOLTAGE, HIGH SPEED SWITCHING ÄW/±, I Outline Draw ings 2.0 i Features • S ii/ ± . f o & X 'i 'y T - 's y • S it im High voltage, high speed switching High reliability

Contextual Info: ERC80M -006 5 a SC H O T T K Y B A R R IER DIO DE I Features titz7 ; u t - >\,K 94 7° • 1&lJtt It Insulated package by fully m o ld ing. • teVF Low V p Connection Diagram Sup er high speed sw itching. H igh reliability by planer d esign . ! Applications

MB08D-120

Contextual Info: Fuji New Semiconductor Products 1200V/8A — H 4# ^ 1MB08-120, 1MB08D-120 J U K J f c l G B T Features 'fe w * . • V 7 y ? > ? + — '/ti& S 'fX ik •g 1 tH 1 ± , ¡ f M i t S RBSOA, SCSOA 4' if) • B .m ^ y 'O T y Z f • Small molded package • Low power loss

Contextual Info: Y B 3 1 1 S 6 I4 A k FAST RECOVERY DIODE : Features • St W i t 9 *&#*<* t i t - . y Ji' = e - t o Y M ? Insulate d p a ckage by fu lly m o ld in g . H ig h vo lta g e by m esa d e s ig n . • SftiRte C onnection D iagram H igh re lia b ility • f f l i i i : A p p lica tio n s

Contextual Info: TP802C 09 ioa SCHOTTKY B A RR IER D IO DE Features • teV F Low V p Connection Diagram Super high speed sw itching. High reliability by planer design. I Applications High speed pow er sw itchin g. : Maximum Ratings and Characteristics : Absolute Maximum Ratings

wt1e

Abstract: 2SK 93
Contextual Info: 2SK1013-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-II SERIES • Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V USS = ± 3 0 V Guarantee • Avalanche-proof

6MBI75F-060

Contextual Info: 6MBI75F-060 75A IGBT ! Outline Drawings IGBT MODULE Features • te til? n £ Low Saturation Voltage • W fflfE tt ( M O S ^ - h fllJg ) • Voltage Drive Variety of Power Capacity Series : A p p lic a tio n s • i — 9 — ( E K if f l'f > ' < — 9

DIODE JS.6

Contextual Info: SK1010-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - I I S E R I E S lOutline Drawings • Features • High speed switching • l ow on-resistance • IJo secondary breakdown • l ow driving power • High voltage • ' ioss = ± 3 0 V Guarantee

Contextual Info: ESAB33 CS (5A) F FAST RECOVERY DIODE ' Features Soft recovery, low noise. High reliability $7E Connection Diagram I Applications • M & U t f Z 'f y T 's y H igh speed pow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings

4r3ti

Contextual Info: 4R3TI60Y-080 * - K -9-T'; • % 'k = Z '> 3 . - V ’. Outline Drawings DIODE and TYRISTOR MODULE : Features • # 7 X /\''> ^ ~ y 3 > f 7 ^ • Glass Passivation Chip Easy Connection • l&WiWt Insulated Type • d i/d t I f £*>'";*; £ v.' • d v /d t