ESAB33 Search Results

TO220I

Abstract: ESAB33-02CS
Contextual Info: ESAB33-02CS 5A Outline Drawing SOFT RECOVERY SUPER HIGH SPEED • Features • Soft recovery, low noise • High reliability ■ Applications • High speed power switching I Maximum Ratings & Characteristics Absolute Maximum Ratings Items Symbols Repetitive Peak Reverse Voltage

Contextual Info: ESAB33 CS (5A) F FAST RECOVERY DIODE ' Features Soft recovery, low noise. High reliability $7E Connection Diagram I Applications • M & U t f Z 'f y T 's y H igh speed pow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings

Contextual Info: ESAB33 CS (5A)_ FAST RECOVERY DIODE : Features Soft recovery, low noise. • S fifS H High reliability Si Connection Diagram : Applications • ft High speed power switching. M axim um Ratings and. Characteristics : Absolute Maximum Ratings Items Repetitive Peak Reverse V oltage

TD-220AB

Abstract: ESAB33
Contextual Info: ESAB33 CS i5A) K FAST RECOVERY DIODE ‘ Features • . ® & 6 L m * v 7 W h e b / 4 x /j '- f s o Soft recovery, low noise. m mm&m High reliability C o n n e ctio n D iagram : A p p lica tio n s High speed power sw itching. M a xim u m Ratings and C haracteristics

nu 6.e diode

Abstract: ESAB33 5a200v
Contextual Info: ESAB33 CS (5A) (200V / 5A) Outline drawings, mm 10+0.5 6.4±0.2 1.32 15±0.2 2.7±0.1 2 3 1.2 3.7±0.2 1 4.5±0.2 Ø3.6±0.2 14 -0.5 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ Soft recovery, low noise High reliability TO-220AB SC-46 Connection diagram

ESAB33

Contextual Info: ESAB33 CS (5A) (200V / 5A) Outline drawings, mm 10+0.5 6.4±0.2 1.32 15±0.2 2.7±0.1 2 3 1.2 3.7±0.2 1 4.5±0.2 Ø3.6±0.2 14 -0.5 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ Soft recovery, low noise High reliability TO-220AB SC-46 Connection diagram

ESAB33

Contextual Info: ESAB33 CS (5A) F FAST RECOVERY DIODE ' Features Soft recovery, low noise. High reliability $7E Connection Diagram I Applications • M & U t f Z 'f y T 's y H igh speed pow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings

ESAB33

Contextual Info: ESAB33 CS (5A) F FAST RECOVERY DIODE ' Features Soft recovery, low noise. High reliability $7E Connection Diagram I Applications • M & U t f Z 'f y T 's y H igh speed pow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings

ESAB33

Contextual Info: ESAB33 CS (5A) F FAST RECOVERY DIODE ' Features Soft recovery, low noise. High reliability $7E Connection Diagram I Applications • M & U t f Z 'f y T 's y H igh speed pow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings

ESAB33

Contextual Info: ESAB33 CS (5A)_ K : Outline Drawings FAST RECOVERY DIODE : Features S oft recovery, low noise. • ¡sttn-H t H igh reliability Connection Diagram • E Ji£ I Applications High speed pow er sw itch in g . Maximum Ratings and Characteristics : A bsolute M axim um Ratings

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

erc24-06

Abstract: ERA21-06 ERC30-02 ERB29-04 ERC48 ERD07-15 ERC24 ERC35-02 ERC38-06 ERD32-01
Contextual Info: COLLMER SEMICONDUCTOR INC 5SE D • HHañTTS Ü0Ü13S3 T ■ very “Quick Reference” Selection Guide 50-100 VOLT Part Number ERA32-01 ERB32-01 ERC30-01 ERD32-01 - 0 3 -O I 200VOLT trr/ns Pkg. Part Number lo A trr/ns Pkg. lo(A) trr/ns Pkg. 1.0 15 1.5 3.0

ERC24-06

Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Contextual Info: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08

Contextual Info: Fast Recovery Diodes Dual package Ratings and characteristics Type Maximum rating Vrrm lo * 1 Ifsm Thermal rating Tj and Tag Amps. °C Dimensions Characteristics Ta=25°C V fm Irrm *2 Max, Volts Max. mA trr *3 /us Rthj-c °C/W Grams Fig. No. Mass Volts Amps.

ESAD25-02C

Contextual Info: /TÉ# < H fü il —K / Rectifier Diodes K Fast Recovery Diodes FRD' 2 in one-package Wf £ Device typs SM3 to n s , « s im m I V » c Thermaî rating Charactertsiica T a - 2 S t V fm tefiM *3 trr IfBW*2 Tj and Tstg Amos t ' M ax Volts Max pA ac. rating

esab34

Abstract: yg906
Contextual Info: FAST RECOVERY DIODES 200 -1000Volts 200 - 300VOLTS PACKAGE Part Number lo A 400-500 VOLTS ÜT nS Part Number 600-800 VOLTS lo (A) trr nS Part Number 1000 VOLTS lo (A) trr nS SG201-2 0.5 400 SC201-4 0.5 400 SC201-6 0.5 40Q SURFACE SC902-2 1 35 SC311-4 0.5

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *

YG902C2

Abstract: TO-220F15 ESAB33-02CS ESAB34M-02C ESAB92-02 ESAB92M-02 ESAB92M-03 KP923C2 KS923C2 TP901C2
Contextual Info: Fast Recovery Diodes Dual package Ratings and characteristics Type M aximum rating rrm io -M-t Volts Am ps. V Ifsm Therm al rating Tj and Tstg Am ps. “C 200 5 Tc=103°C 5 (Tc=125°C) 50 50 TP901C2 200 5 (Tc=125°C) TP901C3 ESAB92-02 ESAB92M-02 300 5 (Tc=125°C)

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection