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Rochester Electronics LLC FCU2250N80Z MOSFET N-CH 800V 2.6A I-PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCU2250N80Z	Bulk	94,025		262	1 - 10 - 100 - 1000 $1.14 10000 $1.14	Buy Now
onsemi FCD850N80Z MOSFET N-CH 800V 6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	FCD850N80Z	Cut Tape	18,156		1	1 $1.24 10 $1.24 100 $1.24 1000 $1.24 10000 $1.24	Buy Now
	FCD850N80Z	Reel	17,500		2,500	1 - 10 - 100 - 1000 - 10000 $1.01	Buy Now
Avnet Americas	FCD850N80Z	Reel		17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $1.06	Buy Now
Mouser Electronics	FCD850N80Z		10,487			1 $1.05 10 $1.05 100 $1.05 1000 $1.05 10000 $1.01	Buy Now
Newark ()	FCD850N80Z	Reel			2,500	1 $1.74 10 $1.74 100 $1.74 1000 $1.74 10000 $1.59	Buy Now
	FCD850N80Z	Cut Tape			1	1 $1.85 10 $1.85 100 $1.85 1000 $1.85 10000 $1.85	Buy Now
TME	FCD850N80Z				2,500	1 - 10 - 100 - 1000 - 10000 $1.43	Get Quote

Richardson RFPD	FCD850N80Z				2,500	1 - 10 - 100 - 1000 - 10000 $1.01	Buy Now
Avnet Asia	FCD850N80Z			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $1.05	Buy Now
Avnet Silica	FCD850N80Z			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	FCD850N80Z	Cut Tape	2,500	0 Weeks, 1 Days	1	1 $0.96 10 $0.95 100 $0.95 1000 $0.94 10000 $0.94	Buy Now
EBV Elektronik	FCD850N80Z			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FCD850N80Z		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IBS Electronics	FCD850N80Z				2,500	1 - 10 - 100 - 1000 - 10000 $1.33	Buy Now
onsemi FCD2250N80Z MOSFET N-CH 800V 2.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	FCD2250N80Z	Digi-Reel	9,463		1	1 $1.33 10 $1.00 100 $0.84 1000 $0.79 10000 $0.79	Buy Now
	FCD2250N80Z	Cut Tape	9,463		1	1 $1.33 10 $1.00 100 $0.84 1000 $0.79 10000 $0.79	Buy Now
	FCD2250N80Z	Reel	7,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.65	Buy Now
Avnet Americas	FCD2250N80Z	Reel		17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.68	Buy Now
Mouser Electronics	FCD2250N80Z		3,132			1 $1.33 10 $1.01 100 $0.84 1000 $0.72 10000 $0.65	Buy Now
Newark ()	FCD2250N80Z	Reel			2,500	1 $0.89 10 $0.89 100 $0.89 1000 $0.89 10000 $0.78	Buy Now
	FCD2250N80Z	Cut Tape			1	1 $1.54 10 $1.23 100 $1.07 1000 $0.96 10000 $0.96	Buy Now
TME	FCD2250N80Z				2,500	1 - 10 - 100 - 1000 - 10000 $0.91	Get Quote

Richardson RFPD	FCD2250N80Z				2,500	1 - 10 - 100 - 1000 - 10000 $0.65	Buy Now
Avnet Silica	FCD2250N80Z			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	FCD2250N80Z		22,470			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FCD2250N80Z			19 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FCD2250N80Z		552			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IBS Electronics	FCD2250N80Z				2,500	1 - 10 - 100 - 1000 - 10000 $0.85	Buy Now
Rochester Electronics LLC FCP650N80Z FCP650N80Z - POWER MOSFET, N-CHA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FCP650N80Z	Bulk	2,954		168	1 - 10 - 100 - 1000 $1.79 10000 $1.79	Buy Now
onsemi FDBL0150N80 MOSFET N-CH 80V 300A 8HPSOF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDBL0150N80	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $2.49	Buy Now
Avnet Americas	FDBL0150N80	Reel		23 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $2.42	Buy Now
Mouser Electronics	FDBL0150N80		3,562			1 $5.31 10 $3.56 100 $2.85 1000 $2.55 10000 $2.44	Buy Now
Newark ()	FDBL0150N80	Reel			2,000	1 $3.75 10 $3.75 100 $3.75 1000 $3.75 10000 $3.43	Buy Now
	FDBL0150N80	Cut Tape			1	1 $5.31 10 $3.67 100 $2.85 1000 $2.63 10000 $2.63	Buy Now
Rochester Electronics	FDBL0150N80		39,901		1	1 - 10 - 100 $2.31 1000 $2.07 10000 $1.94	Buy Now

TME	FDBL0150N80				2,000	1 - 10 - 100 - 1000 - 10000 $3.25	Get Quote
Richardson RFPD	FDBL0150N80				2,000	1 - 10 - 100 - 1000 - 10000 $2.30	Buy Now
Avnet Asia	FDBL0150N80			23 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDBL0150N80			24 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip Stock	FDBL0150N80		51,700			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FDBL0150N80			25 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	FDBL0150N80				2,000	1 - 10 - 100 - 1000 - 10000 $3.22	Buy Now
Win Source Electronics	FDBL0150N80		16,000			1 - 10 - 100 $2.83 1000 $2.54 10000 $2.54	Buy Now

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50N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
50n60 Abstract: G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623 Contextual Info: Advanced Technical Information IGBT with Reverse Blocking capability VCES = 600 / 800V IC25 = 60 A VCE sat = 2.5 V tf = 75 ns IXRH 50N80 IXRH 50N60 C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol Conditions	Original	50N80 50N60 O-247 50n60 G 50N60 50n80 bi-directional switches IGBT induction heat resonant TO-247 D-68623	PDF
50n80 Abstract: 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	50N80Q2 264TM 728B1 50n80 50N80Q2 50n8 IXFB 50N80Q2 IXFB50N80Q2 50N80Q	PDF
50n80 Abstract: 50N80Q2 IXFN50N80Q2 Contextual Info: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns Preliminary Data Sheet miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions	Original	50N80Q2 OT-227 E153432 728B1 123B1 728B1 065B1 50n80 50N80Q2 IXFN50N80Q2	PDF
IXFB Abstract: 50N80Q2 IXFB50N80Q2 50n80 Contextual Info: HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	50N80Q2 264TM IXFB 50N80Q2 IXFB50N80Q2 50n80	PDF
50N80Q2 Abstract: IXFB50N80Q2 264TM Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	50N80Q2 264TM 150imited 728B1 50N80Q2 IXFB50N80Q2 264TM	PDF
50N80Q2 Abstract: IXFN50N80Q2 Contextual Info: HiPerFETTM Power MOSFET IXFN 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV /dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings	Original	50N80Q2 OT-227 E153432 50N80Q2 IXFN50N80Q2	PDF
Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 50N80Q2 VDSS = ID25 = RDS on = N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 800 V 50 A 0.15 Ω trr ≤ 300 ns PLUS 264TM (IXFB) Symbol Test Conditions	Original	50N80Q2 264TM 728B1	PDF
60N60A Abstract: c5021-0 Contextual Info: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90	OCR Scan	50N60AU1 O-264 JEDECTO-264AA 100-C 50N60AU1 60N60A c5021-0	PDF
A 69157 scr Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41 Contextual Info: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)	Original	74K5145 74K5144 74K5146 74K5147 74K5166 74K5170 71K0256 71K0273 71K0255 71K0272 A 69157 scr HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41	PDF
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
Contextual Info: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20	OCR Scan	50N60AU1 25cCto O-247 50N80AU1 1999IXYS	PDF
ixys ml 075 Abstract: 50N60A Contextual Info: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES	OCR Scan	IXGX50N60AU1 IXGX50N60AU1S 50N60AU1 ixys ml 075 50N60A	PDF

50N80 Search Results

50N80 Price and Stock

Rochester Electronics LLC FCU2250N80Z

onsemi FCD850N80Z

onsemi FCD2250N80Z

Rochester Electronics LLC FCP650N80Z

onsemi FDBL0150N80

50N80 Datasheets Context Search

50n60

50n80

50n80

IXFB

50N80Q2

50N80Q2

60N60A

A 69157 scr

50N60

7N60B equivalent

ixys ml 075