50ITIA Search Results

LT 13765

Contextual Info: u im LT1375/LT1376 TECHNOLOGY 1.5A, 500kHz Step-Dow n S w itchin g R eg ulato rs FCflTURCS DCSCM PTIOfl • Constant 500kHz Switching Frequency The LT 1375/LT1376 are 500kHz monolithic buck mode switching regulators. A 1.5A switch is included on the die along with all the necessary oscillator, control, and logic

hh 004 f

Abstract: KIA6901F KIA6901P
Contextual Info: KIA6901P/F SEMICONDUCTOR TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT DC MOTOR SPEED CONTROLLER FEATURES • Wide operation voltage range : 1.8 ~8V • Possible to make applicable sets compact because of minimum number of external parts required. • Easy to adjust speed.

L2791-03

Contextual Info: f Epoxy-sealed Package LEDs Epoxy potting offers high reliability These LEDs are mounted on a metal stem package and sealed with a clear epoxy resin. They feature high-speed response and a wide emission angle. Various types are available, including red emitting diodes that allow easy optical axis alignment and infra­

Contextual Info: NJU7283 Series BATTERY BACKSW I T CH E R UP P R E L I M I N A L Y GENERAL DESCRIPTION PACKAGE OUTLINE The NJU7283 s e r ie s I t c o n ta in s is a B a tte r y B ack-up S w itc h e r. d u a l v o lta g e r e g u la to r s , t r ip le v o lta g e d e te c ­

3906 TRANSISTOR

Abstract: transistor pnp 3906 small signal transistor marking codes
Contextual Info: Central CMKT3904 NPN/NPN CMKT3906 PNP/PNP CMKT3946 NPN/PNP Semiconductor Corp. SURFACE MOUNT ULTRAmini™ DUAL SMALL SIGNAL SILICON SWITCHING TRANSISTORS FEATURES: • ULTRAmini™ SPACE SAVING PACKAGE • TWO NPN 3904 or TWO PNP (3906) TRANSISTORS IN A SINGLE PACKAGE

2SD922

Contextual Info: 2SD922 #^nap 'M±'<r7 -Y=7 >ï>X$ T R IP L E D IF F U S E D P LA N ER T Y P E U LT R A H IG H p T R A N S IS T O R U B T ) IN D U S T R IA L U SE PO W ER S U P P L Y -rnummmm • • Outline Drawings : Features • h F E ^ 'Ît t - a ^ ' Ultra highyS1 • hpEWJ—T I/ t '-cA4<£v.'

SOT-23 CEB

Abstract: marking code PLI D 795 marking code LG
Contextual Info: Central" CMPT6517 NPN CMPT6520 PNP Semiconductor Corp. COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT6517, CMPT6520 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

WWI SOT23

Abstract: and/ojp+431
Contextual Info: Central CMPT3640 S w m lc o n d u c t o r C o r p . PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3640 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for saturated switching applications.

Contextual Info: Central « CZT5338 Sem iconductor Corp. NPN SILICON POWER TRANSISTOR POWER 223 DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely

YTS4123

Abstract: YTS4125
Contextual Info: YTS4123 SILICON NPN EPITAXIAL TYPE FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: • Low Leakage Current : I^gQ=50nA Max. IEBO=-’0nA (Max.) @ V q B=20V @ V e b =3V • Low Saturation Voltage : vCE(sat)=0-3v(Max-) @ Ic=50mA, IB=5mA

Contextual Info: A M I A Su b sid ia ry of G o u ld Inc. S2559A/B/E/F DTMF TONE GENERATOR Features □ W ide Operating Supply Voltage Range: 3.5 to 13.0 Volts A,B 2.5 to 10 Volts (E,F) □ Low Power C M O S Circuitry Allow s Device Power to be Derived Directly from the Telephone Lines or

2SC16

Abstract: 2sc1625 2SC1624 k1005 2SA8150
Contextual Info: I j ^ X B F m S C R E T E / O P T O } 2 S C 1 6 2 4 1 2 S C 1 6 2 5 , 9097250 TOSHIBA Sh DE I TDTTSSD GD074S3 3 SILICON NPN PLANAR TYPE 3 ô ü " 0 7 ‘ tî»3 DISCRETE/OPTO 0 7^33-07 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 1 0 l3 M A X . 0 3 -6 ± 0 -2

AKS TI

Abstract: hh 004 f IM50 KIA6901F KIA6901P
Contextual Info: KIA6901P/F SEMICONDUCTOR TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT DC MOTOR SPEED CONTROLLER FEATURES • Wide operation voltage range : 1.8 —8V • Possible to make applicable sets compact because of minimum number of external parts required. • Easy to adjust speed.

b1185

Abstract: b1184 y206
Contextual Info: Transistors Power Transistor -6 0 V, - 3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) ►External dim ensions (Units: mm) LOW VcE(sat}. VcE(sat) = —0 .5 V (Typ.) (Ic / I b 2) = - 2 A /- 0 .2 A ) Com plem ents the 2 S D 1 7 6 0 / 2 S D 1 8 6 4 /2 S D 1 7 6 2 .

OE304J

Contextual Info: 0 K I SEMI CONDUCTOR GROUP 23E i • b724S40 0007-na □ .3/im Surface -emitting "LED DESCRIPTION OKI O E 3 0 4 J is 1.3/im In G a A s P /ln P su rfa c e em itting L E D d eve lo p ed a s light so u rce for o p tica l L A N sy ste m s and o p tica l equipm ent.

Contextual Info: Central CZT2680 Semiconductor Corp. SURFACE MOUNT NPN HIGH VOLTAGE SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT2680 NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching

71E1237

Contextual Info: SbE D 7TET237 OD B 't t RB S C S -T H O M S O N ¿ 7 / s g s 26T •SGTH T- ZS-J? I LH1061 - thomson DOUBLE POLE HIGH-VOLTAGE SOLID-STATE RELAY ADVANCE DATA AN AT & T PRODUCT ■ HIGH VOLTAGE IC FABRICATED IN A DIE­ LECTRIC ISOLATION PROCESS ■ OPTICAL COUPLING BETWEEN INPUT AND