4MX32 BGA Search Results

4MX32

Abstract: a106a7
Contextual Info: WED3DL324V 4Mx32 SDRAM FEATURES DESCRIPTION n 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and

TMS320C6201

Abstract: TMS320C6701 WED9LC6816V TMS320C6000
Contextual Info: WED9LC6816V White Electronic Designs 256Kx32 SSRAM/4Mx32 SDRAM External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION n Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with

Contextual Info: CMS4A32LAx–75Ex 128M 4Mx32 Low Power SDRAM Revision 0.6 May. 2007 Rev. 0.6, May. ‘07 CMS4A32LAx–75Ex Document Title 128M(4Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

TMS320C6000

Abstract: TMS320C6202 ED07
Contextual Info: WED3DL324V 4Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in

TMS320C6000

Abstract: TMS320C6201 TMS320C6701 WED9LC6816V
Contextual Info: WED9LC6816V White Electronic Designs 256Kx32 SSRAM/4Mx32 SDRAM EXTERNAL MEMORY SOLUTION FOR TEXAS INSTRUMENTS TMS320C6000 DSP DESCRIPTION FEATURES The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with one 256K x 32 SBSRAM and two 4Mx16

bt 2323

Abstract: d 5072 OP 778 4303 303 3200 AP 309 d 5072 transistor 62 AP 804 L 083 4MX32 WED3DL324V10BI
Contextual Info: WED3DL324V White Electronic Designs 4Mx32 SDRAM FEATURES n n n n n n n DESCRIPTION 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer

Contextual Info: WED9LC6816V White Electronic Designs 256Kx32 SSRAM/4Mx32 SDRAM External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION n Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array

BC117

Abstract: 4MX32-SDRAM ts 4141 TMS320C6000 TMS320C6201 TMS320C6701 WED9LC6816V 320C6X
Contextual Info: WED9LC6816V White Electronic Designs 256Kx32 SSRAM/4Mx32 SDRAM External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION n Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array

IS42VM81600E

Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

SM81600E

Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42SM16800E-6BLI

Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM DECEMBER 2010 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42S16160B(D)-7TL

Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42VM16800E

Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES Advanced Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS43R32400D-5BLI

Abstract: ISSI 346
Contextual Info: IS43R32400D 4Mx32 SEPTEMBER 2011 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data at the receiver

Contextual Info: IS43R16800D, IS43R32400D PRELIMINARY INFORMATION 4Mx32, 8Mx16 MARCH 2009 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data

Contextual Info: WED9LC6416V 128Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6416VxxBC is a 3.3V, 128K x 32 Synchronous

Contextual Info: IS43LR16800D, IS43LR32400D 4Mx32, 8Mx16 128Mb Mobile DDR SDRAM FEATURES: • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data at the receiver

Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM JUNE 2011 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES Advanced Information AUGUST 2008 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS45VM16800E-75BLA2

Abstract: IS42VM16800E-75BLI nc1473 IS42VM32400E-75BLI IS42VM16800E 1M x 32 x 4
Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES Preliminary Information NOVEMBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS43R16800E

Contextual Info: IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 128Mb DDR SDRAM FEBRUARY 2013 FEATURES DEVICE OVERVIEW •฀ VDD฀and฀VDDQ:฀2.5V฀±฀0.2V฀ •฀ SSTL_2฀compatible฀I/O •฀ Double-data฀rate฀architecture;฀two฀data฀transfers฀ per clock cycle

SDA10

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM Advanced* External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION • Clock speeds: • SSRAM: 200, 166,150, and 133 MHz • SDRAMs: 125 and 100 MHz The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline