4MX16 FLASH Search Results

SAMSUNG MCP

Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
Contextual Info: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.

SAMSUNG MCP

Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
Contextual Info: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002

SAMSUNG MCP

Abstract: MCP Electronics MCP MEMORY Multi-Chip Package MEMORY UtRAM Density nand sdram mcp
Contextual Info: Preliminary MCP MEMORY KAJ000A30M Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 12, 2003 Preliminary 0.1 Revised

bcr 16m

Abstract: EMC646SP16J RBC CellularRAM Memory 4Mx16 flash
Contextual Info: Preliminary EMC646SP16J 4Mx16 CellularRAM Document Title 4Mx16 bit CellularRAM Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 05,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea

EMC646SP16K

Abstract: Burst CellularRAM Memory
Contextual Info: Preliminary EMC646SP16K 4Mx16 CellularRAM AD-MUX Document Title 4Mx16 bit CellularRAM AD-MUX Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 13,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea

SAMSUNG MCP

Abstract: MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec
Contextual Info: Preliminary MCP MEMORY KAA00B606A Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/64M Bit(4Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. July 18, 2002

DP5Z4MW16PA3

Abstract: DP5Z4MW16PH3 DP5Z4MW16PI3 DP5Z4MW16PJ3 DP5Z4MW16PY3
Contextual Info: 4Mx16, 120 - 200ns, STACK/PGA 30A161-24 A 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 PRELIMINARY DP5Z4MW16PY3 DESCRIPTION: The DP5Z4MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

samsung date code decorder

Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
Contextual Info: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark

SAMSUNG MCP

Abstract: MCP Electronics 128M NAND Flash Memory MCP NAND MCP MEMORY 4MX16* sram UtRAM Density NAND FLASH SAMSUNG M/BVS mcp ohm
Contextual Info: Preliminary MCP MEMORY KBC00A6A0M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.

KBB0XA300M

Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
Contextual Info: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary

SAMSUNG MCP

Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
Contextual Info: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6

DP5Z4MX16PA3

Abstract: DP5Z4MX16PH3 DP5Z4MX16PI3 DP5Z4MX16PJ3 DP5Z4MX16PY DP5Z4MX16PY3
Contextual Info: 4Mx16, 120 - 200ns, STACK/PGA 30A161-04 B 64 Megabit FLASH EEPROM DP5Z4MX16Pn3 PRELIMINARY DP5Z4MX16PY3 DESCRIPTION: The DP5Z4MX16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip

BA204

Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
Contextual Info: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)

SAMSUNG MCP

Abstract: MCP NAND SAMSUNG MCp nand UtRAM Density
Contextual Info: Preliminary MCP MEMORY K5Q5764G0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - 256Mb NAND C-Die_Ver 2.6 - 64Mb UtRAM B-Die(Burst)_Ver 0.4

BA100 diode

Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
Contextual Info: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance

LH28F640SPHT-PTL12

Abstract: LHF64P05 FUM03201 LH28F640SPHT-PTL12A
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F640SPHT-PTL12A Flash Memory 64M 4Mx16/8MBx8 (Model No.: LHF64P05) Spec No.: EL15X051 Issue Date: October 16, 2003 LHF64P05 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,

A25LQ064

Abstract: A25L040A A25L080A A25L032 A25LQ016 A25L040 A43L4616A A25E016 PSRAM 256 FLash 2011 a29160
Contextual Info: Product Selector Memory IC's and More www.amictechnology.com Multi Chip Package MCP Density Configuration Mb Part Number Vcc V Notes Availability 128+32 (16Mx8 / 8Mx16) + 32M A82DL12832T(U)G 1.8 Flash + PSRAM Q2/2011 64+32 (8Mx8 / 4Mx16) + 32M A82DL64032T(U)G

SAMSUNG MCP

Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Contextual Info: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)

K1B6416B6C

Abstract: UtRAM Density
Contextual Info: K1B6416B6C UtRAM Document Title 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target March 11, 2004 Advance 0.1 Revised - Deleted Deep Power Down Mode support

SAMSUNG MCP

Abstract: samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR
Contextual Info: Preliminary MCP MEMORY KAE00C400M Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 64M Bit (4Mx16) UtRAM *2 Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 29, 2002 Preliminary 0.1 Revise - Change UtRAM output load(CL) from 50pF to 80pF

Contextual Info: 4Mx16/2Mx32, 90 - 120ns, PGA 30A126-14 A 64 Megabit FLASH EEPROM DPZ2MW32NV3 DESCRIPTION: The DPZ2MW32NV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers

BA100 diode

Abstract: BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125
Contextual Info: K5C6417YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 16M Bit (1Mx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Advance 0.0 Initial Draft August 29, 2001 1.0 Revised - Changed F-Vcc Max. Value (from 3.0V to 3.3V)

transistor sr61

Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
Contextual Info: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

44SOP flash memory

Contextual Info: 4MX16/8MX8 BIT CMOS MASK ROM HY23V64200 Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external