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    4MX16 FLASH Search Results

    4MX16 FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    MD28F020-90 Rochester Electronics LLC Flash, 256KX8, 90ns, CDIP32, CERDIP-32 Visit Rochester Electronics LLC Buy
    AM188EM-25KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy
    AM188EM-40KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy
    AM188EM-33KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy

    4MX16 FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAMSUNG MCP

    Abstract: MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report
    Text: Preliminary MCP MEMORY KBC00B7A0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


    Original     		PDF KBC00B7A0M 16Mx16) 4Mx16) 512Kx16) 100pF 111-Ball SAMSUNG MCP MCP MEMORY dQ8F SAMSUNG MCP Qualification Report MCP NAND SAMSUNG 256Mb mcp Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability UtRAM Density MCP Samsung SAMSUNG NOR Flash Qualification Report

    SAMSUNG MCP

    Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
    Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002


    Original     		PDF KBB0xA500M 8Mx8/4Mx16) 8Mx16) 4Mx16) 150uA 100uA 200uA 80-Ball 80x12 SAMSUNG MCP KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100

    SAMSUNG MCP

    Abstract: MCP Electronics MCP MEMORY Multi-Chip Package MEMORY UtRAM Density nand sdram mcp
    Text: Preliminary MCP MEMORY KAJ000A30M Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 UtRAM / 64M Bit (4Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 12, 2003 Preliminary 0.1 Revised


    Original     		PDF KAJ000A30M 4Mx16) 512Kx16) 111-Ball SAMSUNG MCP MCP Electronics MCP MEMORY Multi-Chip Package MEMORY UtRAM Density nand sdram mcp

    bcr 16m

    Abstract: EMC646SP16J RBC CellularRAM Memory 4Mx16 flash
    Text: Preliminary EMC646SP16J 4Mx16 CellularRAM Document Title 4Mx16 bit CellularRAM Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 05,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea


    Original     		PDF EMC646SP16J 4Mx16 100ns 120ns bcr 16m EMC646SP16J RBC CellularRAM Memory 4Mx16 flash

    EMC646SP16K

    Abstract: Burst CellularRAM Memory
    Text: Preliminary EMC646SP16K 4Mx16 CellularRAM AD-MUX Document Title 4Mx16 bit CellularRAM AD-MUX Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 13,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea


    Original     		PDF EMC646SP16K 4Mx16 100ns 120ns EMC646SP16K Burst CellularRAM Memory

    SAMSUNG MCP

    Abstract: MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec
    Text: Preliminary MCP MEMORY KAA00B606A Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/64M Bit(4Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. July 18, 2002


    Original     		PDF KAA00B606A 16Mx16) Flash/64M 4Mx16) UtRAM/128M 2Mx16x4Banks) 90/100ns 127-Ball 80x12 SAMSUNG MCP MCP NOR FLASH SDRAM MCP 67 MV- A2 UtRAM Density SAMSUNG mcp Reliability spec

    DP5Z4MW16PA3

    Abstract: DP5Z4MW16PH3 DP5Z4MW16PI3 DP5Z4MW16PJ3 DP5Z4MW16PY3
    Text: 4Mx16, 120 - 200ns, STACK/PGA 30A161-24 A 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 PRELIMINARY DP5Z4MW16PY3 DESCRIPTION: The DP5Z4MW16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip


    Original     		PDF 4Mx16, 200ns, 30A161-24 DP5Z4MW16Pn3 DP5Z4MW16PY3 50-pin 64-Megabits DP5Z4MW16Pn3 DP5Z4MW16PA3 DP5Z4MW16PH3 DP5Z4MW16PI3 DP5Z4MW16PJ3 DP5Z4MW16PY3

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


    Original     		PDF KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp

    SAMSUNG MCP

    Abstract: MCP Electronics 128M NAND Flash Memory MCP NAND MCP MEMORY 4MX16* sram UtRAM Density NAND FLASH SAMSUNG M/BVS mcp ohm
    Text: Preliminary MCP MEMORY KBC00A6A0M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Nand Flash Memory / 64M Bit (4Mx16) UtRAM / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft.


    Original     		PDF KBC00A6A0M 8Mx16) 4Mx16) 2Mx16) 512Kx16) 87-Ball 80x12 SAMSUNG MCP MCP Electronics 128M NAND Flash Memory MCP NAND MCP MEMORY 4MX16* sram UtRAM Density NAND FLASH SAMSUNG M/BVS mcp ohm

    KBB0XA300M

    Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
    Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary


    Original     		PDF KBB0xA300M 8Mx8/4Mx16) 8Mx16) 2Mx16) 80-Ball 80x12 transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402

    SAMSUNG MCP

    Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
    Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6


    Original     		PDF KAA00BB07M-DGUV 16Mx16) 4Mx16) 4Mx16x4Banks) 256Mb 137-Ball 80x14 SAMSUNG MCP KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm

    DP5Z4MX16PA3

    Abstract: DP5Z4MX16PH3 DP5Z4MX16PI3 DP5Z4MX16PJ3 DP5Z4MX16PY DP5Z4MX16PY3
    Text: 4Mx16, 120 - 200ns, STACK/PGA 30A161-04 B 64 Megabit FLASH EEPROM DP5Z4MX16Pn3 PRELIMINARY DP5Z4MX16PY3 DESCRIPTION: The DP5Z4MX16Pn3 ‘’SLCC’’ devices are a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip


    Original     		PDF 4Mx16, 200ns, 30A161-04 DP5Z4MX16Pn3 DP5Z4MX16PY3 50-pin 64-Megabits DP5Z4MX16Pn3 DP5Z4MX16PA3 DP5Z4MX16PH3 DP5Z4MX16PI3 DP5Z4MX16PJ3 DP5Z4MX16PY DP5Z4MX16PY3

    BA204

    Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
    Text: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)


    Original     		PDF KBF0x0800M 8Mx16) 4Mx16) 115-Ball 80x13 BA204 ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153

    SAMSUNG MCP

    Abstract: MCP NAND SAMSUNG MCp nand UtRAM Density
    Text: Preliminary MCP MEMORY K5Q5764G0M Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - 256Mb NAND C-Die_Ver 2.6 - 64Mb UtRAM B-Die(Burst)_Ver 0.4


    Original     		PDF K5Q5764G0M 16Mx16) 4Mx16) 256Mb 111-Ball SAMSUNG MCP MCP NAND SAMSUNG MCp nand UtRAM Density

    BA100 diode

    Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
    Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance


    Original     		PDF K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106

    LH28F640SPHT-PTL12

    Abstract: LHF64P05 FUM03201 LH28F640SPHT-PTL12A
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F640SPHT-PTL12A Flash Memory 64M 4Mx16/8MBx8 (Model No.: LHF64P05) Spec No.: EL15X051 Issue Date: October 16, 2003 LHF64P05 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F640SPHT-PTL12A 4Mx16/8MBx8) LHF64P05) EL15X051 LHF64P05 LH28F640SPHT-PTL12 LHF64P05 FUM03201 LH28F640SPHT-PTL12A

    A25LQ064

    Abstract: A25L040A A25L080A A25L032 A25LQ016 A25L040 A43L4616A A25E016 PSRAM 256 FLash 2011 a29160
    Text: Product Selector Memory IC's and More www.amictechnology.com Multi Chip Package MCP Density Configuration Mb Part Number Vcc V Notes Availability 128+32 (16Mx8 / 8Mx16) + 32M A82DL12832T(U)G 1.8 Flash + PSRAM Q2/2011 64+32 (8Mx8 / 4Mx16) + 32M A82DL64032T(U)G


    Original     		PDF 16Mx8 8Mx16) A82DL12832T Q2/2011 4Mx16) A82DL64032T Q1/2011 A82DL64016T A25LQ064 A25L040A A25L080A A25L032 A25LQ016 A25L040 A43L4616A A25E016 PSRAM 256 FLash 2011 a29160

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    K1B6416B6C

    Abstract: UtRAM Density
    Text: K1B6416B6C UtRAM Document Title 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design target March 11, 2004 Advance 0.1 Revised - Deleted Deep Power Down Mode support


    Original     		PDF K1B6416B6C 4Mx16 K1B6416B7C 54ball 55/Typ. 35/Typ. K1B6416B6C UtRAM Density

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR
    Text: Preliminary MCP MEMORY KAE00C400M Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 64M Bit (4Mx16) UtRAM *2 Revision History Revision No. History Draft Date Remark 0.0 Initial draft. May 29, 2002 Preliminary 0.1 Revise - Change UtRAM output load(CL) from 50pF to 80pF


    Original     		PDF KAE00C400M 16Mx8) 4Mx16) 111-Ball SAMSUNG MCP samsung toggle mode NAND NAND FLASH SAMSUNG toggle mode nand samsung nand sdram mcp KAE00C400M UtRAM Density MCP NAND, DRAM, NOR

    Untitled

    Abstract: No abstract text available
    Text: 4Mx16/2Mx32, 90 - 120ns, PGA 30A126-14 A 64 Megabit FLASH EEPROM DPZ2MW32NV3 DESCRIPTION: The DPZ2MW32NV3 ‘’VERSA-STACK’’ module is a revolutionary new memory subsystem using Dense-Pac Microsystems’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers


    Original     		PDF 4Mx16/2Mx32, 120ns, 30A126-14 DPZ2MW32NV3 DPZ2MW32NV3

    BA100 diode

    Abstract: BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125
    Text: K5C6417YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 16M Bit (1Mx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Advance 0.0 Initial Draft August 29, 2001 1.0 Revised - Changed F-Vcc Max. Value (from 3.0V to 3.3V)


    Original     		PDF K5C6417YT 4Mx16) 1Mx16) 81-Ball 80x11 08MAX BA100 diode BA133 diode diode ba102 SAMSUNG MCP BA102 diode BA102 bufer BA114 BA122 BA125

    transistor sr61

    Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
    Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    Original     		PDF K5T6432YT 4Mx16) 2Mx16) 81-Ball 80x11 transistor sr61 BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor

    44SOP flash memory

    Abstract: No abstract text available
    Text: 4MX16/8MX8 BIT CMOS MASK ROM HY23V64200 Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external


    Original     		PDF 4MX16/8MX8 HY23V64200 HY23V64200 100/120ns. 44SOP, 44TSOP-II 48TSOP-I 44TSOP-II 44SOP flash memory