4MB PSRAM Search Results

8811h

Abstract: flash E2p A0-A21 J-STD-020B M36D0R6040T0 M69AR024B
Contextual Info: M36D0R6040T0 M36D0R6040B0 64 Mbit 4Mb x16, Multiple Bank, Page Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM • SUPPLY VOLTAGE

A0-A21

Abstract: J-STD-020B M36W0R6050T0 M69AR048B 26-MAR-2004 8811h
Contextual Info: M36W0R6050T0 M36W0R6050B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 32 Mbit (2Mb x 16) Pseudo SRAM •

PSRAM

Abstract: 555H SST32HF64A1 SST32HF64A2 236CH
Contextual Info: Multi-Purpose Flash Plus + PSRAM ComboMemory SST32HF64A2 SST32HF64A1 / 64B164Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemories organized as: – SST32HF64A2: 4M x16 Flash + 1024K x16 PSRAM

PSRAM

Abstract: 555H SST32HF64A1 SST32HF64A2 K1299
Contextual Info: Multi-Purpose Flash Plus + PSRAM ComboMemory SST32HF64A2 SST32HF64A1 / 64B164Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemories organized as: – SST32HF64A2: 4M x16 Flash + 1024K x16 PSRAM

SST32HF1621C

Abstract: SST32HF1641 SST32HF1641C SST32HF1681 SST32HF3241 SST32HF3241C SST32HF3281
Contextual Info: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281 SST32HF1621C / SST32HF1641C / SST32HF3241C SST32HF324 / 32832Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES:

Contextual Info: Preliminary‡ 4Mb: 3.0V Core Async/Page PSRAM Memory 256 x16 Features 3.0V Core Async/Page PSRAM Memory MT45V256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC

SST32HF1621C

Abstract: SST32HF1641 SST32HF1641C SST32HF1681 SST32HF3241 SST32HF3241C SST32HF3281
Contextual Info: Multi-Purpose Flash Plus + SRAM ComboMemory SST32HF1641 / SST32HF1681 / SST32HF3241 / SST32HF3281 SST32HF1621C / SST32HF1641C / SST32HF3241C SST32HF324 / 32832Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM x16 MCP ComboMemories EOL Data Sheet FEATURES: • ComboMemories organized as:

Contextual Info: Preliminary‡ 4Mb: 3.0V Core Async/Page PSRAM Memory 256 x 16 Features 3.0V Core Async/Page PSRAM Memory MT45V256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 55ns and 70ns • VCC, VCCQ voltages – 2.7–3.6V VCC

Contextual Info: Preliminary‡ 4Mb: 256K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC

Contextual Info: Preliminary‡ 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages

Contextual Info: Preliminary‡ 4Mb: 256K x 16 Async/Page CellularRAM 1.0 Memory Features Async/Page CellularRAM 1.0 Memory MT45W256KW16PEGA Features Figure 1: • Asynchronous and page mode interface • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC

Mobile SDRAM

Abstract: DDR SDRAM SDRAM PSRAM sdram 4M 16 4 FLASH NOR 64mb Q-309 Q110
Contextual Info: Product Selection Guide of ESMT KGD SDRAM Updated Date : April'2008 Density Organization Description 16Mb 1Mb*16 32Mb 2Mb*16 1Mb*32 4Mb*16 Refresh Speed MHz Pad coordinates MP SDRAM 2.5V SDRAM 3.3V SDRAM 3.3V SDRAM 3.3V SDRAM 2.5V 2K 2K 2K 2K 4K 143 Now

N16T1618A1AZ

Abstract: N16T1618C2AZ N16T1618D1AZ 23183
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1618C2 D1/A1 A Advance Information 16Mb Ultra-Low Power Asynchronous CMOS PSRAM 1M x 16 bit Overview Features The N16T1618C2(D1/A1)A is an integrated

Contextual Info: Low Power Pseudo SRAM 1M words x 16 bits CS26LV16173 Revision History Rev. No. 2.0 2.1 History Initial version Add the package dimensions: D2 and E2 Issue Date Oct. 9, 2007 Aug. 26, 2010 1 Chiplus reserves the right to change product or specification without notice.

S25FL256

Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
Contextual Info: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:

ISSI

Abstract: DDR-3
Contextual Info: ► DRAM PRODUCT LINE Strategy: Provide complete portfolio of low-to-medium density and low power DRAMs • Long-term support for all ISSI DRAMs: 7-10 years typical • SDRAM in all densities up to 512Mb, including x32 products SDR, DDR, DDR2 • Mobile DRAMs for SDR and DDR families for power sensitive application

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

Contextual Info: ESMT M24L216128DA Revision History : Revision 1.0 Jul. 6, 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 1/11 ESMT PSRAM M24L216128DA 2-Mbit (128K x 16) Pseudo Static RAM Features ‧Advanced low-power architecture

spansion solder profile

Abstract: diode F4 3J S29GL016A S29GL-A S71GL016A SPANSION 16
Contextual Info: S71GL016A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 16 Megabit (1M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory 4 Megabit (256K x 16-bit) pSRAM S71GL016A Based MCPs Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/pSRAM Data Sheet (Advance Information)

CYK128K16SCCB

Contextual Info: CYK128K16SCCB 2-Mbit 128K x 16 Pseudo Static RAM Functional Description[1] Features • Advanced low power MoBL architecture The CYK128K16SCCB is a high-performance CMOS pseudo static RAMs (PSRAM) organized as 128K words by 16 bits that supports an asynchronous memory interface. This device

TLA064

Abstract: S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0
Contextual Info: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION

S29PL129J

Abstract: S71PL129JA0 S71PL129JB0 S71PL129JC0
Contextual Info: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION

Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static