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    Contextual Info: Preliminary‡ 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		mt45w512kw16begb16-word09005aef82e41987/source09005aef82e419a5 PDF

    smd code marking HD

    Abstract: linear technology part numbering smd code Ub SMD MARKING CODE h5
    Contextual Info: 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		mt45w512kw16begb16-word09005aef82e4198709005aef82e419a5+4smd code marking hdlinear technology part numberingsmd code ubsmd marking code h5 PDF

    Contextual Info: 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		mt45w256kw16begb16-word09005aef8329f3e309005aef82e419a5 PDF

    Contextual Info: Preliminary‡ 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		mt45w256kw16begb16-word09005aef8329f3e3/source09005aef82e419a5 PDF