49C51 Search Results

KM49C512

Contextual Info: PRELIMINARY 49C512 CMOS DRAM 5 1 2 K X 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 49C512 is a CMOS 5 2 4 ,2 8 8 bit X 9 Dynamic Random Access design is optimized for high performance such as personal computer, graphics and

49C512

Abstract: 49C51
Contextual Info: PRELIMINARY CMOS DRAM 49C512 5 1 2 K X 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 49C512 is a CMOS high speed 5 2 4 ,2 8 8 bit X 9 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: CMOS DRAM 49C512/L/SL 5 1 2 K x 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung 49C512/L/SL is a CMOS high speed 524,288 b i t x 9 D ynam ic Random A ccess Memory. Its design is op tim ized fo r high pe rform ance ap p lica tio n s

Contextual Info: PRELIMINARY CMOS DRAM 49C512 5 1 2 K X 9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 9 C 5 1 2 is a CMOS 5 2 4 ,2 8 8 bit X 9 Dynamic Random A ccess design is optim ized for high perform ance

KM41C4000AJ

Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
Contextual Info: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1

Contextual Info: 49C512LL CMOS DRAM 51 2K x9 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung 49C512LL is a C M OS high speed 524,288 b i t x 9 D ynam ic Random A cce ss Mem ory. Its de sig n is op tim ize d fo r h ig h pe rform ance a p p lica tio n s

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

41C464

Abstract: 41C258 41C1000 44C256C
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.