495 AVO Search Results

SFH495P

Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen

Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen

transistor 495

Abstract: GEX06630 GEX06971 Q62702-P5054 OHF00328 SFH495P
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale Features • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen

SFH 4552

Abstract: GEXY6632 GEXY6971 Q62702-P5054
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 SFH 495 P SFH 4552 Wesentliche Merkmale Features • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen

NTC R29

Abstract: AMP-787441-1 AMP-74 NCP21XV103J03RA 35CV10AX 2N7002-SOT23 8.4v battery charger taiyo yuden date code 919AS-220M ntc 10k 10% D5
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 495 2 CELL LI-ION BATTERY CHARGER WITH CHARGE TERMINATION LTC4006 DESCRIPTION Demonstration circuit 495 is a single battery stand-alone battery charge controller with built in charge termination featuring the LTC 4006. The input voltage is 9 to 20V. The

AN489 Analysis and Basic Operation of the MC1595

Abstract: AN489 motorola AN489 AN489 Analysis and Basic Operation of the MC1495 application note AN489 mc14951 MC1495P MC1595 MC1495 MC1495BP
Contextual Info: Order this document by MC1495/D I MOTOROLA MCI 495 I I Wideband Linear Four=Quadrant Multiplier The MC1 495 is designed for use where the output is a linear product of two input voltages. Maximum versatility is assured by allowing the user to select the level shift method. Typical applications include: multiply, divide*,

001H

Abstract: EM65XX ix 2933 29123microcontroller p6520 EMPB65XX HEF4010 HEF40106B
Contextual Info: EM MICROELECTRONIC - MARIN SA EM66xx 4-bit Micro controller family Contents of this binder : Development System Manual Peripheral Interface Modules Manual LCD Editor Module Manual MFP Programming Interface Manual Version 4.2, July 2002 Binder 4.2-07/02 Rev . A/495

400 AMP CIRCUIT BREAKER

Abstract: LTC6994-2 DC circuit breaker 5A Linear Technology Timerblox DN495 LTC6994
Contextual Info: Simple Energy-Tripped Circuit Breaker with Automatic Delayed Retry Design Note 495 Tim Regan Introduction A circuit breaker protects sensitive load circuits from excessive current flow by opening the power supply when the current reaches a predetermined level. The simplest

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 Wesentliche Merkmale Features • Stimulierter Emitter mit sehr hohem Wirkungsgrad • Laserdiode in diffusem Gehäuse • Besonders geeignet für Impulsbetrieb bei hohen Strömen • Hohe Zuverlässigkeit

32k x 8 28 dip mram

Contextual Info: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Description • 100% Form, Fit, Function-compatible with 32K x 8, micropower SRAM CY62256 . — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 495 mW (max.)

transistor 495

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 5.9 5.5 0.6 0.4 GEX06971 Area not flat 5-9. 5.5 'M p ' 0.6 0.4 Cathode Diode GEX06630 Collector (Transistor) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

GEX06971

Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P Vorläufige Daten / Preliminary Data 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 1.8 1.2 3.85 3.35 Area not flat 0.6 0.4 Chip position Approx. weight 0.5 g fex06306 GEX06971

TMP96141AF

Abstract: DALLAS DS80C320 stove 8051
Contextual Info: Page 1 o f 5 Bom to Fail Cut the Cord the Easy Way. W in a FREE Dev Kit $495 value . Embedded.com - o Born to Fail By Jack Ganssle, Embedded Systems Programming Dec 12 2002 (10:11 AM) URL: http ://www. embedded •com/showArticle.ihtml?articleID=9900877

70ZI

Abstract: CY9C6264 CY9C6264-70PI CY9C6264-70SI FeRAM
Contextual Info: PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features Description • 100% form-, fit-, and function-compatible with 8K x 8 micropower SRAM CY9C6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 495 mW max.

CY62256

Abstract: CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI
Contextual Info: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby

32k x 8 28 dip mram

Abstract: CY62256 CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI 22758
Contextual Info: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby

TRANSFORMER bck 03

Abstract: transistor JSW 07 OP295
Contextual Info: Dual/Quad Rail-to-Rail Operational Amplifiers 0P-295/0P-495 ANALOG ► DEVICES FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 jaV Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable

OP295

Contextual Info: Rail-to-Rail Operational Amplifier 0P-295/0P-495 ANALOG DEVICES □ FEATURES Rail-to-Rail Output Swing Single Supply Operation, +3 V to 36 V Low Offset Voltage: 200 |xV Gain Bandwidth Product: 80 kHz High Open-Loop Gain: 1000 V/m V Unity Gain Stable Low Power

80 ESP 12

Abstract: GEX06630 GEX06971 Q62702-P5054 Q62703-Q7891 OHF00329 transistor sr 61
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)

FeRAM

Abstract: CY62256 CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI 22758
Contextual Info: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby

"three phase" scr heater controller

Abstract: scr power electronic element Mercury Electric Oil heater SCR SN 104 047 star delta wiring diagram SCR POWER CONTROL RTV 17-33
Contextual Info: Issued March 1996 021-495 Data Pack E Cartridge Heaters Data Sheet Cartridge heaters This range of 79 cartridge heaters has been designed to provide localised heat to a restricted work area requiring close thermal control. They are intended for installation within a heater block, thus enabling the

2SB1495

Abstract: 2SD2257
Contextual Info: TOSHIBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • High DC Current Gain : hFE = 2000 Min. (VCE= -2 V , IC= -2 A ) Low Saturation Voltage : VCE(sat)=—1-5V (MAX.) (IC= -1.5A ) Complementary to 2SD2257

Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 SFH 495 P SFH 4552 3.85 3.35 0.6 0.4 Area not flat fex06971 1.8 1.2 Chip position GEX06971 Area not flat 29.5 27.5 Cathode Diode Collector (Transistor)

2SB1495

Abstract: 2SD2257
Contextual Info: TO SH IBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , Ic = -2A ) Low Saturation Voltage : VCE (sa t)= -l-5 V (MAX.) (IC= -1 .5 A )