70ZI Search Results

EN29GL128L

Abstract: BA262 EN29GL128 TC58FVM7T5B toshiba flash
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H L -70ZIP vs TOSHIBA Flash TC58FVM7T(B)5B-TG65 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. B, Issue Date: 2009/08/11

70ZI

Abstract: CY9C6264 CY9C6264-70PI CY9C6264-70SI FeRAM
Contextual Info: PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features Description • 100% form-, fit-, and function-compatible with 8K x 8 micropower SRAM CY9C6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 495 mW max.

external RAM ic 6264

Abstract: 6264 EPROM
Contextual Info: CY9C6264 PRELIMINARY 8K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% Form, Fit, Function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.

5525L

Abstract: CY62256 CY62256L CY62256LL
Contextual Info: 56 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and

CY62256NLL-70PXC

Abstract: CY62256NLL-70SNXI 06511 CY62256NLL-70ZXI CY62256N
Contextual Info: CY62256N 256K 32K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C — Automotive-E: –40°C to 125°C • High speed: 55 ns • Voltage range: 4.5V–5.5V operation

Contextual Info: fax id: 1069 PRELIMINARY CYPRESS CY62256V 32K Features X 8 Static RAM ers. T hese d e vice s have an au to m a tic pow e r-d ow n feature, reducing th e po w e r con sum p tion by over 99% w h en d e se le ct­ ed. The C Y 6 2 2 5 6 V fam ily is available in the standard

CY62256

Abstract: CY62256L CY62256LL
Contextual Info: fax id: 1068 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and

TAA 7656

Abstract: cy62256nll-55snxi cy62256nll70snxc 70snxc CY62256NLL-70SNXC
Contextual Info: CY62256N 256K 32K x 8 Static RAM Functional Description[1] Features • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C • High speed: 55 ns and 70 ns • Voltage range: 4.5V–5.5V operation • Low active power (70 ns, LL version, Com’l and Ind’l)

FeRAM

Abstract: CY62256 CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI 22758
Contextual Info: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby

CY62256NLL-70SNXI

Abstract: CY62256NL-70SNXI CY62256N
Contextual Info: CY62256N 256K 32K x 8 Static RAM Features Functional Description The CY62256N[1] is a high performance CMOS static RAM organized as 32K words by 8 bits. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and tristate drivers. This device has an

Contextual Info: CY9C62256 PRELIMINARY 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% Form, Fit, Function - compatible with 32K x 8 micropower SRAM CY62256 . — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW (max.)

70ZI

Abstract: CY62256 CY9C62256 CY9C62256-70PI CY9C62256-70SI
Contextual Info: CY9C62256 PRELIMINARY 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% Form, Fit, Function - compatible with 32K x 8, micropower SRAM CY62256 . — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW (max.)

Contextual Info: fax id: 1068 _CY62256 32Kx8 Static RAM Features ou tp u t enable OE and th re e -sta te drivers. T his device has an au to m a tic po w er-dow n feature, reducing the po w e r c o n s u m p ­ tion by 99 .9% w hen de selected . The C Y 6 22 56 is in the sta n ­

CY62256LL-55SNxi

Abstract: CY62256LL-55SNx CY62256LL-70SNXC CY62256LL70SNXI CY62256LL-55SNXE CY62256LL-70SNXI CY62256LL-70PXC CY62256LL-70SNX CY62256L-70PXC cy62256l-70snxc
Contextual Info: CY62256 256K 32K x 8 Static RAM Features • Also available in Lead-free packages Functional Description[1] • Temperature Ranges — Commercial: 0°C to 70°C — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • High speed: 55 ns and 70 ns

FeRAM

Abstract: MRAM CY6264 CY9C6264 CY9C6264-70SI CY9C6264-70SNC CY9C6264-70SNI
Contextual Info: PRELIMINARY CY9C6264 8K x 8 Magnetic Nonvolatile CMOS RAM Features • 100% form, fit, function compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.

62128 SRAM

Abstract: k6t1008c2 K6T1008C2C-DB70 k6t1008c2c CY62128LL-70SI HY628100BLLG-55 HY628100BLG-55 cy62128ll-55sc K6T1008C2C-GL70 RAM 62128
Contextual Info: Approved Manufacturers List for Web Parts Part Number: 100-0007 Rev ECO# A E11137 REVISION HISTORY Description of Change Date Apvd By Initial Release Approved Manufacturers: NOTE: In some cases, components under the same part number may originate from various manufacturers,

32k x 8 28 dip mram

Abstract: CY62256 CY9C62256 CY9C62256-70SI CY9C62256-70SNC CY9C62256-70SNI 22758
Contextual Info: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form, fit, function-compatible with 32K x 8 micropower SRAM CY62256 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low power: 330 mW Active; 495 µW standby

CY62256

Abstract: CY62256-55 CY62256-70 CY62256L CY62256LL 5525L CY62256-70SNC CY62256L70SNC
Contextual Info: 56 CY62256 32K x 8 Static RAM Features vided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, Reverse

E825

Abstract: CY62148V ZS32
Contextual Info: fax id: 1093 O YPH ESS W CY62148V PRELIMINARY 512Kx 8 Static RAM Features an au tom atic pow er-dow n feature tha t reduces pow er co n ­ sum p tion by m ore than 99% w h en deselected. • 2 .7 V -3 .6 V o peratio n W riting to th e device is accom plished by taking chip enable

CY62128

Abstract: CY62128-55ZC
Contextual Info: CY62128 128K x 8 Static RAM Features • 4.5V − 5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 330 mW (max.) (60 mA) • Low standby power (70 ns, LL version) — 110 µW (max.) (20 µA) • Automatic power-down when deselected

all datasheet 62128

Abstract: STATIC RAM 62128 62128 62128-1 70ZI RAM 62128 CY62128 CY62128-55ZC CY62128-70ZC
Contextual Info: fax id: 1072 CY62128 128K x 8 Static RAM Features • 4.5V − 5.5V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 330 mW (max.) (60 mA) • Low standby power (70 ns, LL version) — 110 µW (max.) (20 µA) • Automatic power-down when deselected

32k x 8 28 dip mram

Contextual Info: PRELIMINARY CY9C62256 32K x 8 Magnetic Nonvolatile CMOS RAM Features Description • 100% Form, Fit, Function-compatible with 32K x 8, micropower SRAM CY62256 . — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 495 mW (max.)

CY9C6264-70PC

Contextual Info: CY9C6264 PRELIMINARY 8K x 8 Magnetic Nonvolatile CMOS RAM Features Functional Description • 100% form-, fit-, and function-compatible with 8K x 8 micropower SRAM CY6264 — Fast Read and Write access: 70 ns — Voltage range: 4.5V–5.5V operation — Low active power: 330 mW max.

CY62148V

Contextual Info: fax id: 1093 CY62148V PRELIMINARY 512K x 8 Static RAM Features an automatic power-down feature that reduces power consumption by more than 99% when deselected. • 2.7V−3.6V operation • CMOS for optimum speed/power • Low active power — 180 mW max.