4900 MOSFET Search Results

IXYS’ Clare Introduces 2 New Gate Driver Families

Abstract: IXDN602 IXDD614 IXDN614 IXDI614 IXDI602 IXDF602 an 614 AN
Contextual Info: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS’ Clare Introduces 2 New Gate Driver Families IXD_602 and IXD_ 614 Gate Driver ICs are ideal for driving IXYS’ power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. September 14, 2010 - IXYS Corporation

IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers

Abstract: ixdi604 ixd 604 IXDN604 IXDD604 IXDF604 ixd_604 8pin dual gate driver
Contextual Info: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 IXYS Clare Introduces New Family of 4A Dual-Channel Gate Drivers IXD_604 Gate Driver ICs are ideal for driving IXYS power MOSFETs and IGBTs Beverly, MA and Biel, Switzerland. July 6, 2010 - IXYS Corporation NASDAQ:IXYS

AN-202

Abstract: CPC1590 isolated mosfet gate driver
Contextual Info: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 Clare Introduces 200 Volt Optically Isolated, Self Biased Gate Driver CPC1590 is specifically for remote switching of DC and low frequency loads where isolated power is unavailable

Clare Introduces Industry’s First LCAS IC for Ringing SLICs

Abstract: CPC7508 ixys
Contextual Info: PRESS RELEASE Contact: Catherine Austin Clare, Inc. Ph: 978-524-6823 Fax: 978-524-4900 Clare Introduces Industry’s First LCAS IC for Ringing SLICs New CPC7508 Line Card Access Switch LCAS IC Addresses Latest Customer Premises Equipment (CPE) Telephony Gateways such as Fiber-to-the-home, VoIP,

6N80

Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68

IRFP 640

Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
Contextual Info: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140

UPD70F3524

Abstract: uPD70F3525 uPD70F3526 uPD70F3529 uPD70F3508 upd70f3523 uPD70F3506 UPD166017 uPD70F35 V850E2 uPD70F3526
Contextual Info: www.renesas.eu 2010.04 Product Scout Automotive fro s t c du o r p ws y! l o n h s o ew ics i n v o r r e t c ov e l s i E h C T E N r e form m Before actually using the product, Renesas urges users to refer to the latest product manual and/or data sheet in advance.

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ385 CASE OUTLINE: TO-218 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

BUZ211

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ211 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

CHL8325A

Contextual Info: Digital Multi-Phase Buck Controller FEATURES IR3541 CHL8325A/B DESCRIPTION • 5-phase dual output PWM Controller  Phases are flexibly assigned between Loops 1 & 2  Intel VR12, AMD® 400kHz & 3.4MHz SVI and Memory modes The IR3541 and CHL8325A/B are dual-loop digital

BUZ64

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ64 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

buz210

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ210 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45B CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

BUZ382

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ382 CASE OUTLINE: TO-247 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

IXEP1400

Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

STW20N60

Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal

4810 mosfet

Contextual Info: SPICE Device Model SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

IXEP1400

Abstract: CPC1706 CPC1020N
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

LBA716

Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division

BUZ 325

Abstract: BUZ45
Contextual Info: Standard Power MOSFETs BUZ 45 B File Number 2259 N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 500 V rD S on = 0.5 n N -C H A N N E L E N H A N C E M E N T M O D E Features: • SO A is power-dissipation limited m Nanosecond switching speeds

BUZ45A

Abstract: BUZ45 transistor 6.z transistor 125W
Contextual Info: Standard Power MOSFETs File Number BUZ 45 A 2258 N-Channel Enhancement-Mode Power Field-Effect Transistors 8.3 A, 500 V N-CHANNEL ENHANCEMENT MODE rDsioni = 0 .8 O Features: • SOA is power-diss/pation lim ited m N anosecond sw itching speeds a Linear transfer characteristics

Contextual Info: SIEMENS SIMOPAC MOSFET Module BSM 651 F Vos = 500 V lD = 6 X 9 A ^DS on = 0.7 Q • • • • • • • Power m odule 3 -p ha se fu ll-b rid g e FREDFET N channel E nhancem ent m ode Package with insulated m etal base plate C ircuit diagram : Fig . 3 a ’ )

Contextual Info: AP93T08GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free BVDSS 80V RDS ON 4.6mΩ ID

Contextual Info: IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS = ID25 = RDS on ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150