4600 FET TRANSISTOR Search Results

4600 fet transistor

Abstract: LTM4600 LTM4600S n20 n21 fet sanyo CAP 330uF 35V 320 5400 capacitor 4600 fet LTM4600EV LTM4600IV PN01
Contextual Info: Electrical Specifications Subject to Change LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current

LTM4600

Abstract: PN01 transistor marking A21 4600P LTM4600EV LTM4600IV 4600 fet transistor 15V REGULATOR 78 L15 transistor J6 LTM4600S
Contextual Info: Electrical Specifications Subject to Change LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current

LTM4600

Contextual Info: LTM4600 10A High Efficiency DC/DC µModule FEATURES n n n n n n n n n n n n n n DESCRIPTION Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current

LTM4600

Contextual Info: LTM4600 10A High Efficiency DC/DC µModule Features n n n n n n n n n n n n n n Description Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current

nec 2501

Abstract: 2SJ673
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ673 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SJ673 Isolated TO-220 MP-45F designed for high current switching applications.

4600 fet transistor

Abstract: EID8596-12 60Ghz 60GHz transistor pHEMT transistor high power FET transistor s-parameters
Contextual Info: EID8596-12 UPDATED 11/11/2004 8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET FEATURES • • • • • • • • 8.50 – 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression

2SJ605

Abstract: 2SJ605-S 2SJ605-Z 2SJ605-ZJ MP-25 MP-25Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SJ605

amplifier TRANSISTOR 12 GHZ

Abstract: 4600 fet transistor 60Ghz transistor RF TRANSISTOR 10GHZ 4600 fet 60Ghz EID8596-12
Contextual Info: EID8596A1-12 UPDATED 07/12/2007 8.50 – 9.60 GHz 12-Watt Internally-Matched Power FET FEATURES • • • • • • • 8.50 – 9.60 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.5 dBm Output Power at 1dB Compression 9.0 dB Power Gain at 1dB Compression

EID1415-12

Contextual Info: EID1415-12 14.40-15.35 GHz 12-Watt Internally-Matched Power FET FEATURES • • • • • • • • 14.40-15.35 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +41.0 dBm Output Power at 1dB Compression 5.5 dB Power Gain at 1dB Compression 23% Power Added Efficiency

039N04L

Abstract: IEC61249-2-21 IPB039N04L IPP039N04L JESD22 PG-TO220-3
Contextual Info: IPP039N04L G Type IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 3.9 mΩ ID 80 A 1) • Qualified according to JEDEC for target applications

Yuasa NP7-12

Abstract: MC78L05CP 2N3904 AN624 AN626 MTP2955E NP7-12 PIC14C000 ds40122 NP7-12, 12V
Contextual Info: M AN626 Lead-Acid Battery Charger Implementation Using PIC14C000 Author: Dan Butler Microchip Technology Inc. INTRODUCTION The PIC14C000 comes with several peripherals specifically aimed at the battery market. The programmable reference and onboard comparators are useful for creating charge control circuits, while the analog-to-digital

Yuasa NP7-12

Abstract: sealed lead acid battery 12V 7Ah Yuasa battery led 12v 5050 hours Yuasa MC78L05CP 30474 BBS 8500 AN626 FET 4900
Contextual Info: M AN626 Lead-Acid Battery Charger Implementation Using PIC14C000 Author: Dan Butler Microchip Technology Inc. INTRODUCTION The PIC14C000 comes with several peripherals specifically aimed at the battery market. The programmable reference and onboard comparators are useful for creating charge control circuits, while the analog-to-digital

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SJ673

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

K 1358 fet transistor

Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

ATC100A101

Abstract: murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

LTM4600HV

Abstract: to 92 FUSE n20 w 10uf 35v LTM4600
Contextual Info: LTM4600HV 10A, 28VIN High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 28V 10A DC, 12A Peak Output Current Parallel Two µModule DC/DC Converters for 20A

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

90N04

Abstract: NP90N04VLG
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

90N04

Abstract: NP90N04VDG
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NP90N055VDG

Abstract: NP90N055 90N055
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SJ605

Abstract: 2SJ605-S 2SJ605-Z 2SJ605-ZJ MP-25 MP-25Z
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid