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CGHV14250 Datasheets (4)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGHV14250F		Cree	RF FETs, Discrete Semiconductor Products, MOSFET RF	Original	PDF		10
CGHV14250F-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV14250	Original	PDF		10
CGHV14250P		Wolfspeed	250W, GAN HEMT, 50V, 0.5-1.8GHZ,	Original	PDF	1.22MB
CGHV14250P		Wolfspeed	250W, GAN HEMT, 50V, 0.5-1.8GHZ,	Original	PDF	1.24MB

CGHV14250 Price and Stock

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MACOM


MACOM CGHV14250F GaN FETs GaN HEMT 1.2-1.4GHz, 250 Watt
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV14250F					1 - 10 - 100 $613.81 1000 $613.81 10000 $613.81	Get Quote
Richardson RFPD	CGHV14250F				25	1 - 10 - 100 $492.91 1000 $492.91 10000 $492.91	Buy Now
MACOM CGHV14250F-AMP RF Development Tools AMPLIFIER ASSY, INCLUDES CGHV14250F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CGHV14250F-AMP					1 - 10 $1658.25 100 $1658.25 1000 $1658.25 10000 $1658.25	Get Quote
Richardson RFPD	CGHV14250F-AMP				1	1 - 10 - 100 $1373.45 1000 $1373.45 10000 $1373.45	Buy Now
MACOM CGHV14250F-TB Trans RF MOSFET N-CH 150V 18A 3-Pin Case 440162
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGHV14250F-TB				2	1 - 10 - 100 - 1000 - 10000 -	Get Quote
MACOM CGHV14250P Trans RF MOSFET N-CH 150V 18A 3-Pin Case 440161
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CGHV14250P				50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGHV14250 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar	Original	CGHV14250 CGHV14250 CGHV14 350anning,	PDF
Contextual Info: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar	Original	CGHV14250 CGHV14250 CGHV14	PDF