44C41 Search Results

KM44C4100AT

Contextual Info: 44C41OOA/AL/ALL/ASL CMOS DRAM 4 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C K M 44C 4100A /A L/A LL/A S L-5 50ns 13ns 90ns KM 44C 4100A/ALVALL/ASL-6 60ns 15ns 110ns KM 44C41 O OA/AL/ALL/ASL-7

Contextual Info: KM44C4000C, 44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

Contextual Info: 44C4100 CMOS DRAM 4M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 4 C 4 1 00 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KMM372C412AK/A S DRAM MODULE KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372C412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 5

4Mx8 dram simm

Contextual Info: DRAM MODULE 4 Mega Byte KMM5841OOAKN Fast Page Mode 4Mx8 DRAM SIMM , 2K Refresh ,5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KMM5841 OOAKN is a 4M bit x 8 I P r e lim in â r y FEATURES • Performance Range: Dynam ic RAM high density m em ory module. The

Contextual Info: KM44C4003A, 44C4103A CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode Quad C 5 5 DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access

A60e

Abstract: AA010
Contextual Info: DRAM MODULE 16 Mega Byte KMM54041OOAK/AKG Fast Page Mode 4Mx40 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5404100AK is a 4M bit X 40 Dynamic RAM high density memory module The

Contextual Info: DRAM MODULE 4 Mega Byte KMM5941OOAKN Fast Page Mode Preliminary 4M x9 DRAM SIM M , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION T h e S a m s u n g K M M 5 94 1 OOAKN is a 4 M bit x 9 FEATURES • P e rfo rm an ce R ange: D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e

KM44C4100AK

Contextual Info: |M /D M « ? ]} DRAM MODULE 32 Mega Byte KMM53361OOAKV/AKVG Fast Page Mode 8Mx33 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES • Performance Range1 The Samsung KMM533B100AKV is a 8M bit x 33 Dynamic RAM high density memory module The

Contextual Info: 44C4110 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 44C4110 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: DRAM MODULE 32 Mega Byte KMM5368103AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5368103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung

Contextual Info: DRAM MODULE 16 Mega Byte KMM53641OOAKH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53641 OOAKH is a 4M bit x 36 Dynamic RAM high density memory module The Samsung KMM53641 OOAKH consists of nine CMOS

KM44C4103aj

Abstract: 44C4100 SO DIMM DRAM 144 Pin Connector Pinout km44c4100ak
Contextual Info: DRAM MODULE KMM372C412AK/AS KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V G ENER AL DESCRIPTIO N FEATURES The Samsung KMM372C412A is a 4M bit x 72 Dynamic RAM high density memory module. The • Performance Range: KMM372C412A - 5

41C16100

Abstract: 24-PIN 41C16000
Contextual Info: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

TCA 875

Abstract: 44C4100 KM44C4100-6
Contextual Info: 44C4100 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KM 44C 4100 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

KM44C4100BS

Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
Contextual Info: 44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

Contextual Info: K M 4 4 C 4 1 03 BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time

km44c4104b

Contextual Info: KM44C4004B, 44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 4 ,1 9 4 ,3 0 4 x 4 bit E x te n d e d D a ta O u t C M O S D R A M s. E x te n d e d D a ta O u t M o d e o ffe rs

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

Ez102

Abstract: 4103AJ
Contextual Info: KMM372V412AK/AS DRAM MODULE KMM372V412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KMM372V412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 6

KM44C4100ak

Abstract: KMM5364103AK
Contextual Info: DRAM MODULE KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM - 16 Mega Byte 7 GENERAL DESCRIPTION FEATURES The Samsung KMM5364103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung