JAPANESE TRANSISTOR DATA BOOK 2010
Abstract: Si443x Tanking Group AN427 AN436 SC-10 Si4431 Class-E Power Amplifiers class-e power amplify
Contextual Info: AN436 Si4030/4031/4430/4431 PA M A TC H ING 1. Introduction This application note provides a description of the matching of the power amplifier PA on the Si4030/4031/4430/4431 family of RFICs. (As these chips do not differ in the design and functionality of the PA, the
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an436si4030/4031/4430/4431si4431si4032/4432+7japanese transistor data book 2010si443xtanking groupan427sc-10class-e power amplifiersclass-e power amplify
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EL4432CS
Abstract: EL4430CN MAGNETIC HEAD ltad
Contextual Info: elantec EL4430C/EL4431C/EL4432C Video Instrumentation Amplifiers HIGH PERFORMANCE ANALOG INTEGRATED CIR CU ITS Features General Description • Fully d ifferential inputs and feedback T h e E L 4430, 4431, and 4432 are a fam ily o f video instrum entation
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el4430c/el4431c/el4432cel4430cn100i2220pf+403fltmel4432csmagnetic headltad
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9033 transistor
Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Contextual Info: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431
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302n6082bm80-12sd1416mm1601+16mrf631sd1144pt8549sd1214n50542n35539033 transistorpt88282n4932pt8740blw27blx66sd1315bly94mm1669pt8811
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C22B
Abstract: BLW27 transistors for oscillators ic 9033 ICB-287 CB-3071 CB-295 TH9023 Cb28
Contextual Info: 0.75. 4.2 G H z microwave transistors for class C operation transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431
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30blecb-3111cb-294o-117+10cb-3071o-129cb-295icb-287c22bblw27transistors for oscillatorsic 9033th9023cb28
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4430 b
Abstract: ao 4430 4430 8 pin cl 4430 AO 4431 EL4430 EL4430C EL4430CN EL4430CS EL4431
Contextual Info: Video Instrumentation Amplifiers Features General Description Fully differential inputs and feedback Differential input range of g 2V Common-mode range of g 12V High CMRR at 4 MHz of 70 dB Stable at gains of 1 2 Calibrated and clean input clipping 4430 80 MHz G e 1
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el44304430 bao 44304430 8 pin+6cl 4430ao 4431el4430cel4430cnel4430csel4431
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BRIDGE RECTIFIER TOSHIBA 3B
Abstract: LT3748 LT4430ES6 mosfet 4430 Current-doubler 4430 transistor FG 5.5V 0.47F PA0785 LT4430 tapped inductor high voltage buck converter
Contextual Info: LT4430 Secondary-Side Opto-Coupler Driver FEATURES DESCRIPTION n The LT 4430 drives the opto-coupler that crosses the galvanic barrier in an isolated power supply. The IC contains a precision-trimmed reference, a high bandwidth error amplifier, an inverting gain of 6 stage to drive the optocoupler and unique overshoot control circuitry.
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lt4430600mvltc3805/ltc3805-570khz+14700khzmsop-10edfn-10lt3748msop-16lt3758bridge rectifier toshiba 3blt4430es6mosfet 4430current-doubler4430 transistorfg 5.5v 0.47fpa0785tapped inductor high voltage buck converter
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BRIDGE RECTIFIER TOSHIBA 3B
Abstract: Optocoupler 601 lt30 transistor sharp flyback schematic Ceramic Resistor 82K 5W 4430 4430 transistor flyback 200w LTC3723-2 Current-doubler rectifier
Contextual Info: LT4430 Secondary-Side Optocoupler Driver U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Startup and Short-Circuit Recovery
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lt4430600mv200khzlt3804+13ltc3900ltc39014430fbridge rectifier toshiba 3boptocoupler 601lt30 transistorsharp flyback schematicceramic resistor 82k 5w44304430 transistorflyback 200wltc3723-2current-doubler rectifier
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mosfet 4430
Abstract: schematic diagram 72v to 12v converter lt30 transistor flyback converter 12v to 18v linear opto coupler LT4430ES6 LTC3722-2 opto coupler 2kw full bridge converter design 4430 transistor
Contextual Info: LT4430 Secondary-Side Opto-Coupler Driver FEATURES n n n n n n n DESCRIPTION 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery High Bandwidth Error Amplifier Permits Simple Loop
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lt4430600mv200khzlt3804+13ltc3900ltc39014430famosfet 4430schematic diagram 72v to 12v converterlt30 transistorflyback converter 12v to 18vlinear opto couplerlt4430es6ltc3722-2opto coupler2kw full bridge converter design4430 transistor
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Contextual Info: LT4430 Secondary-Side Opto-Coupler Driver Features Description 600mV Reference 1.25% Over Temperature n Wide Input Supply Range: 3V to 20V n Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery n High Bandwidth Error Amplifier Permits Simple Loop
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lt4430600mvltc3805/ltc3805-570khz+6700khzmsop-10edfn-10lt3748msop-16lt3798
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mosfet 4430
Contextual Info: LT4430 Secondary-Side Opto-Coupler Driver FEATURES n n n n n n n DESCRIPTION 600mV Reference 1.25% Over Temperature Wide Input Supply Range: 3V to 20V Overshoot Control Function Prevents Output Overshoot on Start-Up and Short-Circuit Recovery High Bandwidth Error Amplifier Permits Simple Loop
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lt4430600mvltc3805/ltc3805-570khz+7700khzmsop-10edfn-10lt3748msop-16lt3758mosfet 4430
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2N4431
Abstract: 2N4429 LC 117A 2N4430 4431 4431 8 PIN LC+117A SD1170 2N4430C TO-117a
Contextual Info: H JtS'nan'n* - * n ! IV I IC m S e m i P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive Montgomeryvme, PA 18936 Tel: 215 631-9840 2N4429 4431 RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES
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2n44292n44312n4430o-117a+9s882m4vj-02lc 117a44314431 8 pinlc+117asd11702n4430cto-117a
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SD-1505
Abstract: SD1812 Cb28 TCC2001 TCC2003 TCC2010 TCC2301 SD1502 TO-129 sd1831
Contextual Info: Æ 7 SGS'THOMSON TELECOM AND DATA COMMUNICATIONS RF & MICROWAVE TRANSISTORS C SC .400 SQ 2WL FL HERM .250 2LFL TO 39 1.2 . 1.4 GHz CLASS C PULSE FOR RADAR APPLICATIONS Type Package SD 1500 SD 1501 SD 1504 SD 1502 SD 1505 SD 1507 .250 2LFL .400 SQ 2L FL HERM
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tcc2010tcc2301o-117o-129+8sd-1505sd1812cb28tcc2001tcc2003sd1502to-129sd1831
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RL400
Abstract: RL40 pma RL40-MOD RL40-PWR specification of rs 485 cable modbus pt1000 serial 442-X RL423-3 RL424-0 DS301
Contextual Info: RL 400 Modular I/O system Plug-in I/O modules Suitable for CANopen/PROFIBUS-DP/MODBUS TCP Modules for numerous sensors and signals open Flexible plant design MODBUS PROFILE The input/output modules with fieldbus communication ports provide a high degree of flexibility when designing new
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d-34123rl400rl40 pmarl40-mod+7rl40-pwrspecification of rs 485 cable modbuspt1000 serial442-xrl423-3rl424-0ds301
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2N510B
Abstract: 1HW NPN 2NS71 2N3927 2NB642
Contextual Info: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - O f NPN type « Rated Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866
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1311ietui12n37332n3866n3s24+92n39262n39272n9622n9852n21902n510b1hw npn2ns712nb642
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IPP120P04P4-04
Abstract: 340ua IPI120P04P4-04 4P04
Contextual Info: IPB120P04P4-04 IPI120P04P4-04, IPP120P04P4-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 3.5 mW ID -120 A Features • P-channel - Normal Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1
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ipb120p04p4-04ipi120p04p4-04ipp120p04p4-04pg-to263-3-2+4pg-to262-3-1pg-to220-3-1340ua4p04
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D149 diode
Abstract: 1SS100
Contextual Info: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 m: • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant
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bso080p03siec61249-2-21080p3sd149 diode+11ss100
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infineon 2N04H4
Abstract: 2n04h4 Q67060-S6014 s5890
Contextual Info: SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS Power-Transistor Product Summary Feature 40 VDS N-Channel R DS on Enhancement mode 175°C operating temperature Avalanche rated ID P- TO262 -3-1 V m 4 80 P- TO263 -3-2 A P- TO220 -3-1 dv/dt rated
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spi80n04s2-h4spp80n04s2-h4spb80n04s2-h42n04h4+3q67060-s6014infineon 2n04h4s5890
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Contextual Info: ACS151MS S e m iconductor Radiation Hardened 8-Input Multiplexer November 1997 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The Radiation Hardened ACS151MS is an 8-Channel Multi plexer having three binary control inputs and an active low
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acs151msmil-prf-3853525micron2390nm+294mils525nm
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2n04h4
Abstract: infineon 2N04H4 DIODE h4 ANPS071E SPB80N04S2-H4 SPI80N04S2-H4 SPP80N04S2-H4
Contextual Info: SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated P- TO262 -3-1 VDS 40 RDS on 4 m ID 80 A P- TO263 -3-2 Type Package Ordering Code
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spi80n04s2-h4spp80n04s2-h4spb80n04s2-h4q67060-s6014+52n04h4q67060-s6013infineon 2n04h4diode h4anps071e
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infineon 2N04H4
Abstract: Q67060-S6013 2n04h4
Contextual Info: SPP80N04S2-H4 SPB80N04S2-H4 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 40 V RDS on 4 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 1) • dv/dt rated
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spp80n04s2-h4spb80n04s2-h4p-to220-3-1p-to263-3-2+4q67060-s6014q67060-s6013infineon 2n04h42n04h4
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2n04h4
Abstract: H4 SMD SPB80N04S2-H4 SPP80N04S2-H4 Q67040-S6014 infineon 2N04H4
Contextual Info: SPP80N04S2-H4 SPB80N04S2-H4 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 40 R DS on • Enhancement mode ID •=175°C operating temperature • Avalanche rated V 4 mΩ 80 P-TO263-3-2 A P-TO220-3-1 1) • dv/dt rated
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spp80n04s2-h4spb80n04s2-h4p-to263-3-2p-to220-3-1+5q67040-s6014q67040-s60132n04h4h4 smdinfineon 2n04h4
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080P3S
Abstract: D149 BSO080P03S IEC61249-2-21 JESD22-A114
Contextual Info: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 mΩ • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications
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bso080p03siec61249-2-21080p3sd149+1jesd22-a114
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2n04h4
Abstract: infineon 2N04H4 SPB80N04S2-H4 SPP80N04S2-H4
Contextual Info: SPP80N04S2-H4 SPB80N04S2-H4 Preliminary data OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 40 RDS on 4 m ID 80 A P-TO263-3-2 Type Package Ordering Code
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spp80n04s2-h4spb80n04s2-h4p-to263-3-2p-to220-3-1+3q67040-s60142n04h4infineon 2n04h4
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2n04h4
Abstract: infineon 2N04H4 ANPS071E SPB80N04S2-H4 SPI80N04S2-H4 SPP80N04S2-H4 Q67060-S6014
Contextual Info: SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on ID • 175°C operating temperature • Avalanche rated 40 P- TO262 -3-1 V 4 mΩ 80 P- TO263 -3-2 A P- TO220 -3-1
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spi80n04s2-h4spp80n04s2-h4spb80n04s2-h4q67060-s6014+4q67060-s60132n04h4infineon 2n04h4anps071e
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