080P3S
Abstract: D149 BSO080P03S IEC61249-2-21 JESD22-A114
Contextual Info: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 mΩ • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications
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080P3S
Abstract: D149 D149 diode BSO080P03S D1-49 D-149
Contextual Info: BSO080P03S OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 8 mΩ ID -14.9 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter
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080P3S
Abstract: BSO080P03S Q67042-S4232
Contextual Info: BSO080P03S OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 8 mΩ ID -14.9 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter
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080P3S
Abstract: D149 D149 diode BSO080P03S NAS1 P-DSO-8
Contextual Info: BSO080P03S OptiMOS -P Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 8 mΩ ID -14.9 A • Logic level • 150°C operating temperature • Avalanche rated P-DSO-8 • dv /dt rated • Ideal for fast switching buck converter
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bso080p03s080p3s24ngerousd149+3d149 diodenas1p-dso-8
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Contextual Info: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 mY • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant
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D149 diode
Abstract: 1SS100
Contextual Info: BSO080P03S H OptiMOS -P Power-Transistor Product Summary Features V DS -30 V • P-Channel R DS on ,max 8 m: • Enhancement mode ID -14.9 A • Logic level • 150°C operating temperature PG-DSO-8 • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant
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bso080p03siec61249-2-21080p3sd149 diode+11ss100
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