441MIL Search Results

Contextual Info: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.1 Rev. 1.1 November 2004 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003) - First release Revision 1.1 (November, 2004)

Contextual Info: DDR SDRAM 512Mb B-die x4, x8 DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.2 October, 2004 Rev. 1.2 October, 2004 DDR SDRAM 512Mb B-die (x4, x8) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003) - First version for internal review

Contextual Info: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: DDR SDRAM 512Mb B-die x4, x8 Pb-Free DDR SDRAM 512Mb B-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) (400mil x 441mil) Revision 1.1 October, 2004 Rev. 1.1 October, 2004 DDR SDRAM 512Mb B-die (x4, x8) Pb-Free DDR SDRAM 512Mb B-die Revision History

DDR333 512MB CL2.5

Abstract: DDR266 DDR333 DDR400
Contextual Info: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) (400mil x 441mil) Revision 1.0 Rev. 1.0 October 2003 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003)

DDR333

Abstract: DDR400
Contextual Info: DDR SDRAM 512Mb B-die x8 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 1.0 Rev. 1.0 October 2003 DDR SDRAM 512Mb B-die (x8) DDR SDRAM 512Mb B-die Revision History Revision 1.0 (October, 2003) - First release Rev. 1.0 October 2003

DDR266

Abstract: DDR333
Contextual Info: DDR SDRAM 512Mb B-die x4, x8 Preliminary DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 0.1 Rev. 0.1 Agust. 2003 DDR SDRAM 512Mb B-die (x4, x8) Preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003)

DDR266

Abstract: DDR333 DDR400
Contextual Info: Preliminary DDR SDRAM DDR SDRAM 512Mb D-die x8 512Mb D-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (400mil x 441mil) (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: DDR SDRAM 512Mb B-die x4, x8 Preliminary DDR SDRAM 512Mb B-die DDR SDRAM Specification sTSOP(II) (400mil x 441mil) Revision 0.0 Rev. 0.0 Feb. 2003 DDR SDRAM 512Mb B-die (x4, x8) Preliminary DDR SDRAM 512Mb B-die Revision History Revision 0.0 (February, 2003)

K4S280832D

Contextual Info: K4S280832D CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S280832D CMOS SDRAM Revision History Revision 0.0 July, 2001

K4S280832CNL

Contextual Info: shrink-TSOP K4S280832C-N CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S280832C-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8

Contextual Info: shrink-TSOP KM48S16030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 July 1999 shrink-TSOP

Contextual Info: shrink-TSOP K4S280832B-N CMOS SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S280832B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 8

K4S281632B-N

Contextual Info: shrink-TSOP CMOS SDRAM K4S281632B-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by

K4S281632C-N

Abstract: samsung 0441 K4S281632C-NL K4S281632CNL
Contextual Info: shrink-TSOP CMOS SDRAM K4S281632C-N 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The K4S281632C-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by

Contextual Info: shrink-TSOP KM44S32030AN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 April 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.1 Apr. 1999 shrink-TSOP

Contextual Info: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

Contextual Info: K4S281632D CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S281632D CMOS SDRAM Revision History Revision 0.0 July, 2001

Contextual Info: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz

KM416S8030BN

Abstract: KM416S8030B
Contextual Info: shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 1999 shrink-TSOP