4416A Search Results
4416A Price and Stock
Elesa+Ganter DIN 172-B14,4-16-AGuide bushing; hardened steel; Øout: 22mm; Øint: 14.4mm; DIN 172 |
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DIN 172-B14,4-16-A | 1 |
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onsemi MMBF4416ATransistor: N-JFET; unipolar; 5mA; 0.225W; SOT23; Igt: 10mA |
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MMBF4416A | 1 |
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MMBF4416A | Tape & Reel | 15,000 |
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| MMBF4416A | Tape & Reel | 52 Weeks | 12,000 |
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MMBF4416A | 3,000 | 43 Weeks | 3,000 |
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MMBF4416A | 44 Weeks | 3,000 |
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MMBF4416A | 2,859 |
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MMBF4416A | 15,000 |
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Elesa+Ganter DIN 172-B4,4-16-AGuide bushing; hardened steel; Øout: 8mm; Øint: 4.4mm; DIN 172 |
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DIN 172-B4,4-16-A | 1 |
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Central Semiconductor Corp 2N4416A TIN/LEAD- Boxed Product (Development Kits) (Alt: 2N4416A TIN/LEAD) |
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2N4416A TIN/LEAD | Box | 9 Weeks | 2,000 |
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Microchip Technology Inc 2N4416AUBTransistor JFET N-Channel 35V 15mA 4-Pin UB - Bulk (Alt: 2N4416AUB) |
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2N4416AUB | Bulk | 100 |
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2N4416AUB | Bulk | 500 |
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2N4416AUB | 28 Weeks |
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2N4416AUB |
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4416A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2N4416
Abstract: SST4416
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2n4416/2n4416a/sst4416sst44162n4416/a2n4416/2n4+3 | |
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Contextual Info: Central Sem icon du ctor Corp. C M P F 4416A SILICON N-CHANNEL JFET DESCRIPTION: The C EN TR AL SEM ICO NDUC TO R 4416A type is an epoxy molded NChannel Silicon Junction Field EffectTran$istor manufactured in an SOT-23 case, designed for VHF amplifier and mixer applications. |
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cmpf4416aot-23 | |
lc7218
Abstract: RDSF SK 57 100 SA 2232M DIP24S LA2230 LA2232 LA2232M LC7070 MFP24S
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n4416ans4416la22322232m-rds+11 | |
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Contextual Info: F4 9-97 Small O utline Surface M ount Package Devices N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BVgsS Device Type >GSS VgS(OFF) Limits Conditions Min Max Vos to Min Max @Vds (mA) (mA) (V) Min @Ig Max @VGS (V) (UA) (nA) (V) SMP 4340 SMP4341 SMP 4391 |
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smp4341smp245 | |
LA2232
Abstract: 4416A LA2232M LC7070 MFP24S 2232M DIP24S LA2230
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en4416ala22322232mla2232m+5 | |
2N5248
Abstract: BC264C 2N5557 2N5103 2N5485 2n5556 BF244A BF245C 2N5104 BC264A
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bc264ao-92debc264ebc264c+11 | |
geophone
Abstract: 1143J gt 1081 ADC1140 ADC1143 ADC1143J ADC1143K
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adc1130/adc113114-bitadc1131j/k10ppm/+10 | |
2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
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2n7588p3139bc233asprague 40d+6 | |
BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
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bf195 equivalentbf1972n3680bf173+6 | |
transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
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transistors bc 557cbf366smd code 307cf199 transistor+6 | |
4416A
Abstract: 2N4416
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2n4416/2n4416apn44162n4416+4 | |
2n4416
Abstract: 2N4416 equivalent SST4416
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2n4416/2n4416a/sst44162n44162n4416asst4416+3 | |
3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
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3866sbf247 equivalentbrochage des circuits integrestriac gk+6 | |
catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
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catalogue des transistors bipolaires de puissancebrochage des circuits integresh3c1-07lb 124 transistor equivalente+6 | |
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pj211
Abstract: J300C SMP4220 SMP4091 smp4856 BF24 j300b SMP4117
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nj132pj211j300csmp4220+5 | |
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Contextual Info: TYPES 2N4416, 4416A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN NO . D L -S 6 81 0 6 4 9 , J A N U A R Y 1968 FOR VHF AM PLIFIER A ND M IX E R APPLICATIONS High Power G a in . . . 10 dB M in at 400 M Hz Low Noise F igure. . . 4 dB M a x af 400 M Hz |
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2n44162n4416a400-m7s222 | |
2N4416
Abstract: 2N4416A ITE4416
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2n4416/aite44162n44162n4416a+3 | |
U1994
Abstract: mpf102 equivalent 2N4416 2N4416A 2N5668-70 MPF108 2N3966 2N4416-16A 2N5555 MPF102
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2n44162n4416avqs-16u1994+7 | |
siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
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j-23548k24123i39-40inz3766+11 | |
1n52408
Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
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301pt1115302pt1115303pt1115311pt1110+15 | |
2N3303
Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
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chiana562n3303t1s57rjh 3347+7 | |
LA2232M
Abstract: 2232M DIP24S LA2230 LA2232 LC7070 MFP24S 4416A "RDS Demodulator" RDS demodulation decoder
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Original |
en4416ala22322232mla2232m+7 | |
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
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2sb504kpl 30092sb502bly34+6 | |
74L47
Abstract: a1208 transistor 74L03 sn76131 MC526L eh12a MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR tg321 PJ 909 inverter LS600
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cc-40110072-41-us54s/74s74l47+9 | |