440UM Search Results

BC817A

Abstract: BC807A
Contextual Info: BC817A BC817A Silicon NPN Epitaxial Transistor Description: The BC817A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um

Contextual Info: 9012A 9012A Silicon PNP Epitaxial Transistor Description: The 9012A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um

BC807A

Abstract: BC817A
Contextual Info: BC807A BC807A Silicon PNP Epitaxial Transistor Description: The BC807A is designed for audio frequency general amplifier applications. Features: ●Excellent hFE Linearity ●Complementary to BC817A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um

Contextual Info: BC817 BC817 Silicon NPN Epitaxial Transistor Description: The BC817is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807 Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um

Contextual Info: BC807 BC807 Silicon PNP Epitaxial Transistor Description: The BC807is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC817 Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um

9013A

Contextual Info: 9013A 9013A Silicon NPN Epitaxial Transistor Description: The 9013A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9012A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um

Contextual Info: Attenuators Type N DC -1 8 GHz Precision Performance Frequency: D C -1 8 .0 GHz, D C -1 2.4 , and DC - 8.0 units available Attenuation Values: 1 - 60 dB as noted Attenuation Accuracy: i - 6 d B ± 0 .3 d B 7 - 20 dB 21 - 40 dB ± 0.5 dB + 0.7 dB 41 - 60 dB

5401 transistor

Abstract: 5401 5551 transistor transistor 5401
Contextual Info: 5401 5401 Silicon PNP Epitaxial Transistor Description: The 5401 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥150V@IC=1mA ●Complementary to 5551 Chip Appearance

Gunn Diode

Abstract: 10 GHz gunn diode MT030 MIL-E-15090 MTH80
Contextual Info: SERIES MT SERIES MTH GUNN DIODE « - 1 8 GHz OSCILLATORS " GENERAL SPECIFICATIONS: Temperature Range: Turn On Stability Time: Finish: Environmental: Harmonics: Spurious: Load VSWR: —20°C to +55°C 1 ms max. Paint per MIL-E-15090 Type II CL2 MIL-STD-202

5551

Abstract: 5551 transistor 5551 datasheet 5401 555-1
Contextual Info: 5551 5551 Silicon NPN Epitaxial Transistor Description: The 5551 is designed for general purpose applications requiring high breakdown voltage Features: ●High collector-emitter breakdown voltage VCEO≥160V@IC=1mA ●Complementary to 5401 Chip Appearance

BR 1n70

Abstract: 0.8um 700V mos 1N70
Contextual Info: 3VD199700YL 3VD199700YL 高压MOSFET芯片 描述 Ø 3VD199700YL为采用硅外延工艺制造的N沟道增 强型700V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；