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    BR 1n70

    Abstract: 1N70 TO-251-3L
    Contextual Info: 3VD199700YL 3VD199700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD199700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.


    Original     		3vd199700ylo-251-3l2070m1900m+3br 1n701n70to-251-3l PDF

    BR 1n70

    Abstract: 0.8um 700V mos 1N70
    Contextual Info: 3VD199700YL 3VD199700YL 高压MOSFET芯片 描述 Ø 3VD199700YL为采用硅外延工艺制造的N沟道增 强型700V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		3vd199700yl3vd199700yln700vmoso-251-3l+82070m1900m556um440umbr 1n700.8um700v mos1n70 PDF