110UM Search Results

42-DL313

Contextual Info: 42-DL313 Version : A.004 Issue Date : 2004/06/17 File Name : SP-DL313-A.004.doc Total Pages : 6 Optical Fiber Receiving IC 新竹市展業一路九號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 42-DL313 9-7F-1, Prosperity Road I, Hsin-Chu, Taiwan, R.O.C. Tel：886-3-5645656

LSI SAS 2208

Abstract: jrc 4026 JRC 3414 jrc 4608 ali 3328 1055 CQM1 NJU6575A NJU6575AC SEG22
Contextual Info: m - JÈ r NJU6575A PRELIMINARY BIT MAP LCD D R IVER G EN E R A L D ESC R IPTIO N The NJU6575A is a bit map LCD driver to display graphics or characters. It contains 4,422 bits display data RAM, microprocessor inter­ face circuits, instruction decoder, 134-segment and 33-common

7924

Abstract: SB84 SC109 7457 frequency divider transistor 238 8441 gac 748 ROW130 4944 SB 7457 601 Frequency divider 6800-PARALLEL
Contextual Info: SSD1339 Advance Information 132RGB x 132 with 2 smart Icon lines Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice. http://www.solomon-systech.com

a42 a92 transistor

Abstract: a92 TRANSISTOR transistor A92 A92 at
Contextual Info: A92 A92 Silicon PNP Epitaxial Transistor Description: The A92 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone Features: ●High voltage: VCEO=300V ●Complementary to A42 Chip Appearance Chip Size

TRANSISTOR A42

Abstract: a42 TRANSISTOR a42 a92 transistor
Contextual Info: A42 A42 Silicon NPN Epitaxial Transistor Description: The A42 is designed for application as a video output to drive color CRT, or as a dialer circuit in electronics telephone Features: ●High voltage: VCEO=300V ●Complementary to A92 Chip Appearance Chip Size

9015B

Abstract: 9014b C 9015b a3101 C 9014B
Contextual Info: 9015B 9015B Silicon PNP Epitaxial Transistor Description :The 9015B is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9014B Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um

9013b

Contextual Info: 9012B 9012B Silicon PNP Epitaxial Transistor Description :The 9012B is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013B Chip Appearance Chip Size 490umx490um Chip Thickness 210±20um

BC817A

Abstract: BC807A
Contextual Info: BC817A BC817A Silicon NPN Epitaxial Transistor Description: The BC817A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC807A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um

Contextual Info: 9012A 9012A Silicon PNP Epitaxial Transistor Description: The 9012A is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9013A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um

Z117

Abstract: 331 y55 z132 Y48311 y 718
Contextual Info: HM18TS402 HM18TS402 402Ch. , 64 Gray Scale Color TFT LCD SOURCE DRIVER - 1- Preliminary HM18TS402 1. OVERVIEW The HM18TS402 is a 402 channel output, ultra low power, signal source column driver for a TFT LCD panel. This device has a digital-to-analog converter using 5 external reference voltages to display 262,144 colors.

Contextual Info: Laser Diodes CUSTOMER : Not Fixed DATE : 2013. 06. 19. Rev : REV. 2 SPECIFICATIONS FOR APPROVAL Vertical NUV Chip MODEL NAME : LEUV-V514A6 RoHS Compliant Halogen Compliant DESIGNED CHECKED APPROVED 2013.06.19 2013.06.19 2013.06.19 1 Germany & Other Countries

OPA9420

Contextual Info: Infrared LED Chip OPA9420 GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage

Contextual Info: OPA8528H Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage

HP83000

Abstract: 0.7 um CMOS process parameters Nitto 9850 JEDEC20 G226 Nitto MP8000 MP8000 ITS9000 atmel PLCC bottom "marking" MG2RTP
Contextual Info: Qualpack MG2RT/MG2RTP Qualification Package MG2RT / MG2RTP 0.5 µm Radiation Tolerant SCMOS3 Technology MG2RT / MG2RTP 0.5 µm SCMOS3 1999 August TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. 0 – 1999 August 1 Qualpack MG2RT/MG2RTP 1. General Information . 3

9015A

Contextual Info: 9014A 9014A Silicon NPN Epitaxial Transistor Description: The 9014A is designed for use in pre-amplifier of low level and low noise Features: ●Excellent hFE Linearity ●Complementary to 9015A Chip Appearance Chip Size 330umx330um Chip Thickness 210±20um

9013B

Contextual Info: 9013B 9013B Silicon NPN Epitaxial Transistor Description :The 9013B is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to 9012B Chip Appearance Chip Size 490umx490um Chip Thickness 210±20um

BC807A

Abstract: BC817A
Contextual Info: BC807A BC807A Silicon PNP Epitaxial Transistor Description: The BC807A is designed for audio frequency general amplifier applications. Features: ●Excellent hFE Linearity ●Complementary to BC817A Chip Appearance Chip Size 440umx440um Chip Thickness 210±20um

TCS 3414

Abstract: JRC 3414 JRC 2521 NJU6561 APA 3414 222M SE 2921 battery SEG22 Jrc 3066
Contextual Info: A NJU6561 PRELIM IN ARY BIT MAP LCD DRIVER • GENERAL DESCRIPTION The NJU6561 is a bit map LCD driver to display graphics or characters. It contains 3.920 bits display data RAM, microprocessor inter­ face circuits, instruction decoder, 80-segment and 49-common

JRC 2135

Abstract: jrc 319 84 jrc regulator JRC 2240 JRC 2228
Contextual Info: JR C NJ U6 577 PR E LIM IN A R Y BIT MAP LCD DRIVER • GENERAL DESCRIPTION The NJU6577 is a bit map LCD driver to display graphics or characters. It contains 4,240 bits display data RAM, microprocessor inter­ face circuits, instruction decoder, 80-segment and 53-common

transistor bc846

Abstract: BC846 BC856
Contextual Info: BC846 BC846 Silicon NPN Epitaxial Transistor Description :The BC846is designed for audio frequency general amplifier applications Features: ●Excellent hFE Linearity ●Complementary to BC856 Chip Appearance Chip Size 350umx350um Chip Thickness 210±20um

ED-211IR

Abstract: 110um 880nm
Contextual Info: ED-211IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : • N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 260 245 n-Electrode n-AlGaAs epi layer n-Electrode 255 110 260 p-AlGaAs epi layer Emission area p-Electrode

OPA8509

Contextual Info: OPA8509 Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage

OPA9445F

Contextual Info: Infrared LED Chip OPA9445F GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage

110um

Abstract: OPA9423
Contextual Info: Infrared LED Chip OPA9423 AlGaAs/GaAs 1. Material Substrate GaAs Epitaxial Layer GaAs 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy Symbol Parameter 3. Electro-Optical VF Characteristics Forward Voltage Reverse Voltage Power Wavelength (N Type)