OPA8509 Search Results
OPA8509 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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OPA8509Contextual Info: OPA8509 Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8509 --------------------110um OPA8509 | |
Contextual Info: OPA8509 Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8509 --------------------110um |