4330 030 32221 Search Results

MH 6211

Abstract: HIA TRANSISTOR UHF amplifier module ZL 575 SOT321 BGY202 4330 030 32221
Contextual Info: Philips Semiconductors Product specification UHF amplifier module BGY202 FEATURES DESCRIPTION • Single 6 V nominal supply voltage The BGY202 is a three-stage UHF amplifier module. It consists of three NPN silicon planar transistor chips mounted together with matching and bias circuit

ITT 2222 A

Abstract: ITT 2222 npn itt 2222 SOT342 2222861 BGY203 flange RF resistor 50 PHILIPS UHF AMPLIFIER MODULE LIST transistor tt 2222 TT 2222
Contextual Info: Philips Semiconductors Preliminary specification UHF amplifier module BGY203 FEATURES DESCRIPTION • 6 V nominal supply voltage The BGY203 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit

BGY202

Abstract: resistor metal film uhf amplifier MBD800
Contextual Info: Product specification Philips Sem iconductors UHF amplifier module BGY202 FE A T U R ES DESCRIPTION • S in g le 6 V nom inal su pply voltage The B G Y 2 0 2 is a three-stage U H F am plifier m odule. It co n sists of three N P N silicon P la n a rtra n sisto r chips

t04 68 3 pin transistor

Abstract: PHILIPS UHF AMPLIFIER MODULE LIST BGY200 2222 861 phaseshift
Contextual Info: Product specification Philips Semiconductors UHF amplifier module BGY200 FEATURES DESCRIPTION • 7.2 V nominal supply voltage The BGY200 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit

smd transistor bd 37

Abstract: S45 SMD BLT80 t8 smd transistor TRANSISTOR NPN c4 nf TRANSISTOR SMD 3b c4 3b smd transistor smd transistor l6 bd 9105 transistor smd Catalogue
Contextual Info: Product specification Philips Semiconductors UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a

philips rf choke ferrite

Contextual Info: N AUER PHILIPS/DISCRETE bbsa^ai 0026766 07T * A P X BLT93/SL b'lE D A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.

BGY200

Abstract: transistor zs 35 2222 861 sot350
Contextual Info: Product specification Philips Semiconductors UHF amplifier module BGY200 FEATURES DESCRIPTION • 7.2 V nominal supply voltage The BGY200 is a four-stage UHF amplifier module. It consists of four NPN silicon planar transistor chips mounted together with matching and bias circuit

BGY201

Abstract: 0G74 GD743
Contextual Info: P hilips S em iconductors P roduct spe cificatio n UHF amplifier module BGY201 FEATURES DESCRIPTION • 12.5 V nominal supply voltage The BGY201 is a five-stage UHF amplifier module. It consists of five NPN silicon planar transistor chips mounted together with matching and bias circuit

BGY110F

Abstract: Amplifier Modules PHILIPS UHF AMPLIFIER MODULE LIST FERROXCUBE 4330 BGY110D MCB102
Contextual Info: Philips Components Datasheet status Product specification date of issue May 1991 BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is afour-stage UHF amplifier module, primarily designed for hand-held transmitting equipment

ferrite 4312

Abstract: SL 100 NPN Transistor
Contextual Info: PHILIPS INTERNATIONAL bSE D 711002b QDbEböS 333 I IPHIN BLT93/SL • A UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in hand-held radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.

SMD Transistor W01

Abstract: smd transistor ne c2 S45 SMD t8 smd transistor 5F smd transistor W01 transistor transistor SMD A6 transistor SMD w01 BLT80 SMD Transistor 5f
Contextual Info: Product specification Philips Semiconductors UHF power transistor BLT80 FEA TUR ES • S M D encapsulation • Gold metallization ensures excellent reliability. A PP LIC A TIO N S • Hand-held radio equipment in the 900 M Hz communication band. D E S C R IP T IO N

Contextual Info: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA

UHF amplifier module

Abstract: BGY110F uhf amplifier design transistor CD 910 905-890 SL 100 NPN Transistor uhf amplifier 110G BGY110D BGY110E
Contextual Info: Product specification Philips Semiconductors , 1U_ . . . UHF amplifier modules BGY110D; BGY110E; BGY110F; BGY110G PINNING - SOT246 DESCRIPTION The BGY110 is a four-stage UHF amplifier module, primarily designed for hand-held transmitting equipment operating from a nominal

Contextual Info: N AUER PHILIPS/DISCRETE bTE ]> • bbS3T31 QD3Q2bfl 347 r n m p s u o m p o n e n ts D atash eet status Product specification date o f issue May 1991 BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed

ic8085

Abstract: MCS103 BGY110F ferroxcube Ee core IC808 MCB088 905-890 BGY11 uhf amplifier UHF amplifier module
Contextual Info: N AUER PHILIPS/DISCRETE rnmps uomponents Datasheet status Product specification date of issue May 1991 bTE ]> • 1^ 33^31 DD302bû 347 * A P X BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed

BGY203

Abstract: SC09
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY203 UHF amplifier module Product specification Supersedes data of May 1994 File under Discrete Semiconductors, SC09 1996 May 23 Philips Semiconductors Product specification UHF amplifier module BGY203 FEATURES PINNING - SOT342A

SMD TRANSISTOR L6

Abstract: BLT80 philips Trimmer 60 pf KM10 KM10 transistor SMD ic catalogue smd transistor zi MRA775 L5 smd transistor TRANSISTOR SMD L3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC08b 1996 May 02 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation

BGY110D

Abstract: BGY110E 110E 110G BGY110F BGY110G MBH304 Amplifier Modules
Contextual Info: Product specification Philips Semiconductors BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules PINNING - SOT246 FEATURES • 7.2 V nominal supply voltage DESCRIPTION PIN • 1.7 W output power 1 RF input/Vc • Easy control of output power by DC voltage.

Contextual Info: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

358 SMD transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

Contextual Info: DISCRETE SEMICONDUCTORS DAT BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

4894

Abstract: SMD ic catalogue BLT80 KM10 4312 020 36640
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

MBH302

Abstract: BGY110F BGY110G 110E 110G BGY110D BGY110E SC09 C900F sot246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC09 1996 May 06 Philips Semiconductors Product specification BGY110D; BGY110E;

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y