BGY110 Search Results

BGY110D

Abstract: BGY110E 110E 110G BGY110F BGY110G MBH304 Amplifier Modules
Contextual Info: Product specification Philips Semiconductors BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules PINNING - SOT246 FEATURES • 7.2 V nominal supply voltage DESCRIPTION PIN • 1.7 W output power 1 RF input/Vc • Easy control of output power by DC voltage.

Contextual Info: DEVELOPMENT DATA BGY110B T h is d a ta sheet co n ta in s advance in fo rm a tio n and s p e c ific a tio n s are su b je ct to change w it h o u t n o tic e . UHF AMPLIFIER MODULE The BGY110B is a four-stage UHF am plifier module designed prim arily fo r hand-held transm itting

BGY110F

Abstract: Amplifier Modules PHILIPS UHF AMPLIFIER MODULE LIST FERROXCUBE 4330 BGY110D MCB102
Contextual Info: Philips Components Datasheet status Product specification date of issue May 1991 BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is afour-stage UHF amplifier module, primarily designed for hand-held transmitting equipment

BGY110A

Abstract: 40801 NPN planar RF transistor 824 transistor
Contextual Info: D EVELO PM EN T DATA 41E: • T llG Ô E b 0026457 h B IP H IN 11 BGY110A Jl T h is data sheet c o n ta in s a dvance in fo rm a tio n a n d sp e cific atio n s are sub{ect to cha nge w it h o u t notice. P H IL IP S INTERNATIONAL T -7 Y ~ 0 M UHF A M P L IF IE R M O D U L E

BGY110G

Abstract: 928 transistor
Contextual Info: Product specification Philips Sem iconductors BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC09 OR DATA SHEET DESCRIPTION PINNING - SOT246 The BGY110 is a four-stage UHF am plifier m odule, prim arily designed

Contextual Info: D E V E LO P M E N T D ATA • bb53^3]i 003D2bb S7M * A P X | This data sheet contains advance information and specifications are subject to change without notice. BGY110B N AMER PHILIPS/DISCRETE b'lE D UHF AMPLIFIER MODULE The BGY110B is a four-stage UHF amplifier module designed primarily for hand-held transmitting

Contextual Info: • DEVELOPMENT DATA h h S 3 m i DD3QSb4 7T1 * A P X | This data sheet contains advance information and specifications are subject to change without notice. BGY110A N AMER PHILIPS/DISCRETE b'lE D _ UHF AMPLIFIER MODULE The B G Y110A is a four-stage UHF amplifier module designed primarily for hand-held transmitting

Contextual Info: N AUER PHILIPS/DISCRETE bTE ]> • bbS3T31 QD3Q2bfl 347 r n m p s u o m p o n e n ts D atash eet status Product specification date o f issue May 1991 BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed

UHF amplifier module

Abstract: BGY110F uhf amplifier design transistor CD 910 905-890 SL 100 NPN Transistor uhf amplifier 110G BGY110D BGY110E
Contextual Info: Product specification Philips Semiconductors , 1U_ . . . UHF amplifier modules BGY110D; BGY110E; BGY110F; BGY110G PINNING - SOT246 DESCRIPTION The BGY110 is a four-stage UHF amplifier module, primarily designed for hand-held transmitting equipment operating from a nominal

BGY110A

Abstract: transistor 824 SOT-246 sot246 sot 24-6 3101I
Contextual Info: IAPX bbS3131 0G3D S b 4 7T1 I D E V E L O P M E N T DATA This data sheet contains advance information and specifications are subject to change w ithout notice. BGY110A N AMER P H I L I P S / D I S C R E T E b lE » UHF AMPLIFIER MODULE The BG Y 1 1 0A is a four-stage U HF amplifier module designed primarily for hand-held transmitting

NPN planar RF transistor

Abstract: BGY110B
Contextual Info: D E V E L O P M E N T DATA T h is data sheet c o n ta in s a dvance In fo rm a tio n and 41E 81 ?llü& 2b GÜHÔMS^ T • P H I N BGY110B sp e cific atio n s are subject to cha nge w it h o u t notice . I I -

MBH302

Abstract: BGY110F BGY110G 110E 110G BGY110D BGY110E SC09 C900F sot246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY110D; BGY110E; BGY110F; BGY110G UHF amplifier modules Product specification Supersedes data of May 1992 File under Discrete Semiconductors, SC09 1996 May 06 Philips Semiconductors Product specification BGY110D; BGY110E;

ic8085

Abstract: MCS103 BGY110F ferroxcube Ee core IC808 MCB088 905-890 BGY11 uhf amplifier UHF amplifier module
Contextual Info: N AUER PHILIPS/DISCRETE rnmps uomponents Datasheet status Product specification date of issue May 1991 bTE ]> • 1^ 33^31 DD302bû 347 * A P X BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed

SOT-246

Abstract: BGY110b
Contextual Info: b b 5 3 c131 G 0 3 D 2 b b 574 I IAPX D E V E L O P M E N T DATA BGY110B T his data sheet contains advance information and specifications are subject to change w ithout notice. N AMER P H I L I P S / D I S C R E T E bTE D UHF AMPLIFIER MODULE The B G Y 1 1 0 B is a four-stage U H F am plifier m odule designed prim arily for hand-held transm itting

bgy113f

Abstract: BGY113E SOT321 RF Power Modules BGY113G BGY204 BGY113B BGY133 SOT246 SOT342
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Modules and Transistors for Mobile Phones 1996 Jun 19 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones Selection guide VHF CAR MOBILE

Contextual Info: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

BGY46B

Abstract: TRANSISTOR regulator fm 513 diode piezoelectric mobile charger Analog Voice scrambler dtmf interface with microcontroller DTMF mobile fm operational amplifier SA612 All Microphone
Contextual Info: Philips Semiconductors Semiconductors for Telecom systems Alphanumeric index page BGY46A UHF power amplifier module 42 BGY46B UHF power amplifier module 43 BGY47A UHF power amplifier module 44 BGY95A/B UHF amplifier module 45 BGY96A/B UHF amplifier module

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BGY116a

Abstract: fo-57C BGY114E
Contextual Info: 67 RF/Microwave Devices RF Power Am plifier M odules co n t. The P h ilip s range in clu d e s RF p o w er m o d u le s inte nded p rim a rily for V H F/U H F m o b ile radio sy stem s and U H F/SH F ce llu la r radio. Th ese m o d u le s save co n sid e ra b le de sign effort and

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

RF Power Modules

Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
Contextual Info: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32

transistor D 982

Abstract: TDA7050 All Microphone tda7052 ic POCSAG Receiver piezoelectric mobile charger "true Logarithmic Amplifier" TDA7052 Audio power amplifier IC tda7052
Contextual Info: Philips S em iconductors Semiconductors for Telecom systems Functional index page SPEECH/TRANSMISSION CIRCUITS PCA1070 programmable analog CMOS transmission IC 339 TEA1060/1061 versatile telephone transmission circuits with dialler interface; TEA1060: low impedance input for dynamic and magnetic

SOT262

Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
Contextual Info: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.