42N170 Search Results

42N170 Price and Stock

Filter by Manufacturer

IXYS Corporation


IXYS Corporation IXBT42N170 IGBTs BIMOSFET 1700V 75A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXBT42N170		3,217			1 $42.20 10 $31.89 100 $31.89 1000 $31.89 10000 $31.89	Buy Now
	IXBT42N170		3,209			1 $42.95 10 $31.89 100 $31.89 1000 $31.89 10000 $31.89	Buy Now
TTI	IXBT42N170	Tube			300	1 - 10 - 100 - 1000 $27.50 10000 $27.50	Buy Now
IXYS Corporation IXBH42N170 IGBTs 1700V 75A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXBH42N170		388			1 $35.15 10 $24.59 100 $24.59 1000 $24.59 10000 $24.59	Buy Now
	IXBH42N170		378			1 $35.15 10 $24.59 100 $24.59 1000 $24.59 10000 $24.59	Buy Now
TTI	IXBH42N170	Tube			30	1 - 10 - 100 $23.10 1000 $23.10 10000 $23.10	Buy Now
IXYS Corporation IXBH42N170A IGBTs BIMOSET 42A 1700V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXBH42N170A		287			1 $44.36 10 $33.85 100 $33.85 1000 $32.33 10000 $32.33	Buy Now
	IXBH42N170A		287			1 $44.36 10 $33.85 100 $33.85 1000 $32.33 10000 $32.33	Buy Now
TTI	IXBH42N170A	Tube			300	1 - 10 - 100 - 1000 $28.55 10000 $28.55	Buy Now
IXYS Corporation IXBR42N170 IGBTs 57Amps 1700V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXBR42N170					1 - 10 - 100 $29.10 1000 $25.70 10000 $25.70	Get Quote
	IXBR42N170					1 - 10 - 100 $29.10 1000 $25.70 10000 $25.70	Get Quote
IXYS Corporation IXBT42N170A IGBTs TO268 1700V 21A IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	IXBT42N170A					1 - 10 - 100 - 1000 $34.10 10000 $34.10	Get Quote
	IXBT42N170A					1 - 10 - 100 - 1000 $34.10 10000 $34.10	Get Quote
TTI	IXBT42N170A	Tube			300	1 - 10 - 100 - 1000 $33.52 10000 $33.52	Buy Now

Find more 42N170 price and stock on Findchips.com

42N170 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C9014 Abstract: 42N170 84ae Contextual Info: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V = 75 A IC25 VCE sat = 3.6 V IXBH 42N170 IXBT 42N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V	Original	42N170 C9014 42N170 84ae	PDF
42N170 Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	42N170 42N170 O-268 O-247	PDF
Contextual Info: Advance Technical Information IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	42N170A O-268 O-247) 728B1	PDF
Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	42N170 O-247	PDF
Contextual Info: Advance Technical Information VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous	Original	42N170A 42N170A O-268 O-247 O-268 O-247) 728B1	PDF
Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V IXBH 42N170 IXBT 42N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	42N170 42N170 O-268 O-247 O-247)	PDF
Contextual Info: Advance Technical Information IXBN 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	42N170A 728B1	PDF
Contextual Info: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous	Original	42N170A O-268 O-247) 728B1	PDF
Contextual Info: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	42N170A 728B1	PDF
98933 Abstract: E153432 IXBN42N170A Contextual Info: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	42N170A 150ing 728B1 98933 E153432 IXBN42N170A	PDF
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
40N160 Abstract: 16N170 Contextual Info: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33	Original	16N170A 16N170 42N170 40N160 9N160 15N140	PDF

42N170 Search Results

42N170 Price and Stock

IXYS Corporation IXBT42N170

IXYS Corporation IXBH42N170

IXYS Corporation IXBH42N170A

IXYS Corporation IXBR42N170

IXYS Corporation IXBT42N170A

42N170 Datasheets Context Search

C9014

42N170

98933

50N60

7N60B equivalent

40N160