4142 TS Search Results

Contextual Info: SAMSUNG SEMICONDUCTOR INC* MMBT4126 14E D | 7^4142 0Q072tfl Q | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SD275SE30A/B/C SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4142, Rev A SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Contextual Info: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 m E D ^7=^4142 Q0G?aci 4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

IRFr010

Contextual Info: FEATURES D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 0012315 • • • • • • • 7^4142

Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage

JE2955

Contextual Info: SAMSUNG ELECTRONICS MJD2955 INC 42E D B 7^4142 OOCHOS'i 3 • SHGK PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • Lead Formed for Surface Mount Applications No Suffix

Contextual Info: S AMSUNG ELECTRONICS INC MMBT3904 M5E D B 7=^4142 ODGTGBT b El NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25°C C h a ra cte ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

samsung 822

Abstract: IRFS820 N 821 Diode IRFS821 IRFS822 IRFS823 GG173
Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7=^4142 001737^ bib I suste N-CHANNEL POWER MOSFETS IRFS820/821/822/823 FEATURES TO-220F • Lower R ds ON • Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: SAMSUNG SEMICONDUCTOR I NC MMBT6427 1ME D | 7^4142 0 0 0 7 2 8 4 •*1 | 'f-Z '? . NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: SAMSUNG SEMI CONDUCTOR INC MMBT5550 14E D 17^4142 0007502 S .J NPN EPITAXIAL SILICON TRANSISTOR - ;— H IG H VOLTAGE TRANSISTO R ' T - a SOT.23 q - R ~ A BSO LUTE M A X IM U M RATINGS Ta= 2 5 ° C

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS8598 IME D | 7^4142 DQim qO PNP EPITAXIAL SILICON TRANSISTOR T -29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Vbltage

TI41

Contextual Info: SAMSUNG ELECTRONICS INC b7E D m 7^4142 KM64B258A 0017500 ITT SMGK BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8, 10, 12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.)

Contextual Info: SAMSUNG ELECTRONICS INC MMBT5401 M2E D • 7^4142 0 0 C H Û 4 7 S ■ SMGK PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage ■

Contextual Info: SAMSUNG ELECTRONICS INC fa7E D • 7^4142 KM44C1OOOBSL DDlSbfi? bSO ■ SMGK CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: KM44C1000BSL-6 tRAC tCAC tRC 60ns 15ns 110ns KM44C1000BSL-7 70ns 20ns

Contextual Info: 42E D SAMSUNG ELECTRONICS INC 7=^4142 DDDTDbS 7 M SM CK NPN EXITAXIAL SILICON TRANSISTOR M PSA44 'T - 'r 7 - i s HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic. Collector-Base Voltage , Colleotor-Emitter Voltage ‘ • Emitter-Base Voltage

JE3055

Contextual Info: SAMSUNG ELECTRONICS MJD3055 INC 42E D B 7^4142 000=1031 1 OSÍ1GK NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • « • • • Lead Formed for Surface Mount Applications No Suffix

Contextual Info: SAMSUNG SEMI CONDUCTOR 14E INC D 1 7^4142 QÜG7323 4 T - ¿ 7 - i MPS6513 ! NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V ceo=30V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: SAMSUNG ELECTRONICS INC b7E » • DG17D77 GTD ■ SriGK PRELIMINARY 7^4142 KM23V16100A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152X 8 bit organization • Fast access tim e: 200ns(max.) • Supply voltage: single+3V or +3.3V

Contextual Info: SAMSUNG ELECTRONICS INC 42E D KA2220 S 7^4142 0 0 0 =120 0 S E3SMÛK LINEAR INTEGRATED CIRCUIT 'T - 'n - T A EQUALIZER AMPLIFIER WITH ALC The KA2220 Is a monolithic integrated circuit consisting of a preamplifier and ALC circuit for cassette tape recorders

IRFS730

Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM SPECIFICATION REVISION HISTORY REV. NO. 0.0 SUMMARY DATE Initial Release 1997. 1. 29 • • • » • • • • • • • • Rev 0.0 ELECTRONICS • 7^4142 00372^7 AIT PRELIMINARY KM732V696/L 64Kx32 Synchronous SRAM

Contextual Info: SAMSUN6 ELECTRONICS INC b4E D • 7^4142 KMM5362000B1/B1G 0G14b47 G67 ■ SflGK DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 b 74 0014^11 DRAM MODULES KMM5404100/G 4MX40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5404100-6 • • • • • • • Irac tcAC tue 60ns 15ns 110ns KM M5404100-7 70ns 20ns

syrelec 4541

Abstract: crouzet 4541 syrelec ts 4142 Syrelec Crouzet ts 4141 syrelec C 106 Syrelec 100 crouzet
Contextual Info: 4141 / 4142 Preselection up/down counters, LCD, 48 x48 • ■ ■ ■ ■ ■ Presets and scale factor easy to alter Large back-lit LCD display unit Simultaneous display of current value and preset Safeguarded : good resistance to interference Backed up on EEPRÔM memory