4142 TS Search Results

JB marking transistor

Abstract: transistor marking JB MMBT5550 marking JB
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT5550 14E D | 7*^4142 0007505 S. J NPN EPITAXIAL SILICON TRANSISTOR -HIGH VOLTAGE TRANSISTOR T-jq-R ' SOT.23 ~ ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic

KM28C64A-20

Abstract: KM28C64A15 KM28C65A KM28C65A-20 KM28C64A-25 KM28C64A-12 KM28C65A15 KM28C64A25
Contextual Info: SAMSUNG ELECTRONICS INC D • 7^4142 OOlböfiO TSS SflGK CMOS EEPROM KM28C64A/KM28C65A 8 K x 8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64AJ65A: Commercial — KM28C64AK65AI: Industrial • Simple Byte Write & Page Write

Contextual Info: SAMSUNG SEMICONDUCTOR INC* MMBT4126 14E D | 7^4142 0Q072tfl Q | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cotlector-Emitter Voltage Emitter-Base Voltage

8Q transistor

Abstract: MMBTA56 MPSA55 SS MARKING TRANSISTOR
Contextual Info: SAMSUNG SEMICONDUCTOR INC . MMBTA56 IME D | 7^4142 00Q72T? 7 | PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2N6515

Abstract: 2N6516
Contextual Info: SAMSUNG SEMICONDUCTOR INC 2N6516 14E D | 7^4142 00071^ 1 | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISOTR • Collector-Emitter Voltage: Vcto=300V * Collector Dlssipatioh: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic

transistor

Abstract: Samsung Semiconductor
Contextual Info: r 7 [ SAMSUNG SEMICONDUCTOR INC MMBC1623L3 m e o § 7^4142 0007am, i | NPN EPITAXIAL SILICON TRANSISTOR — : -' T AMPLIFIER TRANSISTOR - a R - - SO T-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage

MMBA812M4

Abstract: MMBT5086
Contextual Info: , SAMSUNG SEMICONDUCTOR INC MMBA812M4 ltíE 0 §7^4142 0007233 3 f PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: SD275SE30A/B/C SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4142, Rev A SILICON SCHOTTKY RECTIFIER DIE Ultra Low Forward Voltage Drop Typical Voltage Drop 0.30V Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Contextual Info: SAMSUNG SEMICONDUCTOR INC^ MMBTA43 m E D ^7=^4142 Q0G?aci 4 1 | NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

KSR1006

Abstract: KSR2006
Contextual Info: SAMSUNG SEMICONDUCTOR INC '3 S '| \i4 E D J 7^4142 0007055 7 | KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In) • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10KO, R,=47KD)

KSR1011

Abstract: KSR2011
Contextual Info: SAMSUNG SEMICONDUCTOR IM E INC D 17^ 4142 0007107 *1 | PN P EPITAXIAL SILICON TRANSISTOR KSR2011 - 'T - 3 1 SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=22KO)

transistor sot-23 marking L8

Abstract: MMBT6427 H1030
Contextual Info: SAMSUNG S EMICONDUCTOR INC MMBT6427 146 D | 7^4142 □□□7284 *1 | -fizf- NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2929 transistor

Abstract: MMBT6427 MMBTA14 SOT-23 J
Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBTA14 14E D | 7^4142 OGt^eT! t | NPN EPITAXIAL SILICON TRANSISTOR T-29-29 DARLINGTON AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage . Collector-Emitter Voltage Emitter-Base Voltage

MMBC1009F1

Contextual Info: SAM SUNG SEMICONDUCTOR INC MMBC1009F1 l^ E D | 7*ìfc.4142 00G723? | NPN EPITAXIAL SILICON TRANSISTOR1~ ^ AM/FM RF AMPLIFIER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic' Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

BCX71J

Abstract: MMBT5086
Contextual Info: SA MS UN G SEMICONDUCTOR INC BCX71J 1ME D | 7*^4142 000722b t, | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBA812M4 1I,E 0 | 7^4142 0007233 3 | PNP EPITAXIAL SILICON TRANSISTOR T - n -o q GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

IRF9640

Abstract: irf9640 mosfet IRFP9240 9243 MOSFETs TO-220 diode J4S IRF9643 IRF9642 IRF9641 IIRF9640
Contextual Info: FEATURES TO -220 0G12EÔ3 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability IRF9640/9641/9642/9643 7^4142 •

IRFr010

Contextual Info: FEATURES D-PACK Lower R d s ON Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability 0012315 • • • • • • • 7^4142

Contextual Info: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBA811C7 I ME D | 7^4142 00G723G fl | PNP EPITAXIAL SILICON TRANSISTOR T DRIVER TRANSISTOR - & - SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-B ase Voltage Vc8 0 50 V CoHector-Emltter Voltage

it4142

Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E D | ? it,4142 GOOtfllb 0 | KSA952 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLICATIONS HIGH TOTAL POWER DISIPATION PT=600 mW High Hfe and LOW VCE<sat) ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Symbol Collector-Base Voltage

JE2955

Contextual Info: SAMSUNG ELECTRONICS MJD2955 INC 42E D B 7^4142 OOCHOS'i 3 • SHGK PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • Lead Formed for Surface Mount Applications No Suffix

BCW72

Abstract: MMBT5088
Contextual Info: SAMS UN G SEMICONDUCTOR INC BCW72 IME D | 7*^4142 a007£lì i J[ NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C i Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitfer-Base Voltage Collector Current

IRFDC

Abstract: KSC2682 KSA1142 KSC2688 samsung tv R3307 audio output TRANSISTOR NPN SAMSUNG transistor ksc2682 transistor J 3305 74143
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC2682 IME O | 7^4142 0GG7Sfc>4 4 N P N EPITAXIAL SILICO N TRAN SISTO R AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSA1142 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage