40QA Search Results

bc807

Contextual Info: '  BC807-25QA; BC807-40QA ' 1  45 V, 500 mA PNP general-purpose transistors Rev. 1 — 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible

BC817

Contextual Info: '  BC817-25QA; BC817-40QA ' 1  45 V, 500 mA NPN general-purpose transistors Rev. 1 — 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible

KMB7D0DN

Abstract: KMB7D0DN40QA 40QA FLP-8
Contextual Info: SEMICONDUCTOR 40QA MARKING SPECIFICATION FLP-8 PACKAGE 1. Marking method Laser Marking. 2. Marking KMB7D0DN 40QA 1 701 3 2 No. 2007. 12. 6 Item Marking Description Device Name 40QA 40QA Pin No. Dot Pin 1 Lot No. 701 Revision No : 0

H04-004-07

Abstract: 103 H04 1MBI400NB-060 MS5F3238 S1000 47ij
Contextual Info: DATE DRAWN Cet. -3 CHECKED icr. D e v ic e Name : Type Name : Spec. : NAM E No. ‘ 3 “ ^ 5" it, I G B T DWG.NO. This m aterial and ihe Information herein Is the property o f P»|! Electric C o .lid They shall be neither reproduced, c o p ie d lent, or disclosed in any way w hatsoever for the use of a n y

Contextual Info: N AMER PHILIPS/DISCRETE 25E D • ^53= 131 00 20 7 0 0 7 BUK657-400A BUK657-400B PowerMOS transistor Fast Recovery Diode FET r - 37-/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM400HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE ] QM400HA-2HB • Ic f • • • • Collector current.400A V C EX Coliector-ernitter voltage 1000V hFE DC current gain. 750

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

IRGDDN400M06

Abstract: c454 INTAPAK package mosfet 400a
Contextual Info: International ^Rectifier Provisional Data Sheet PD-9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 400A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses

qm400ha-h

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM400HA-H HIGH POWER SWITCHING USE INSULATED TYPE QM400HA-H • Ic • V cex • hFE Collector current.400A Collector-emitter voltage. 600V DC current gain. 750

Schottky Diode 40V 6A

Abstract: 40QA kmb6d0np40qa marking 20
Contextual Info: SEMICONDUCTOR 40QA TECHNICAL DATA N and P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter.

CP1205S

Abstract: CP1205 NTC 40K CP1205HD U01A CP-1205 513K d1n5819 18vc8 DIP-24
Contextual Info: 苏州创先电子科技有限公司 CP1205 CP1205 ᮴ࠋⳈ⌕⬉ᴎ᥻ࠊ఼ CP1205ᰃ催ᗻ㛑㄀Ѡҷऩ⠛᮴ࠋⳈ⌕偀䖒᥻ࠊ⬉䏃DŽᅗࣙ ৿ᅲ⦄ᓔ⦃ǃϝⳌ៪ಯⳌ偀䖒᥻ࠊ᠔䳔ⱘܼ䚼ࡳ㛑DŽℸ⬉䏃ࣙ ᣀ䕀ᄤԡᄤẔ⌟఼ˈ⏽ᑺ㸹ٓ෎‫ˈޚ‬䬃啓⊶ᤃ㤵఼ˈϝϾ䲚⬉

Contextual Info: INTERNATIONAL RECTIFIER ZOR 'T 73 DE'| 4Û55452 □□DLTll 1 Data Sheet No. PD-3.139 in t e r n a t io n a l r e c t if ie r S18CF & S18CFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 jus 125 AMP RMS, CENTER AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs

KMB7D0DN40QA

Abstract: 40QA KMB7D0DN
Contextual Info: SEMICONDUCTOR 40QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in PC, portable

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

N044RH12

Contextual Info: / WESTCODE ® SEMICONDUCTORS Technical Publication TN044R Issue 2 July 1985 v — y — C onvertor Grade Stud-Base Thyristor Type N044R 45 amperes average: up to 1 500 volts V rrm Ratings Maximum values at 125°C Tj unless stated otherwise SYMBOL RATING

2SD627

Abstract: TI15J 2sb644
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

KMD7D5P

Abstract: KMD7D5P40QA
Contextual Info: SEMICONDUCTOR 40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for H battery protection circuit.

Contextual Info: SIEMENS 16M x 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HYB 3165400AJ/AT(L) -40/-50/-60 Advanced Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:

TQ-125

Abstract: MIL-M-55565 IR LFN ST9N lm38510
Contextual Info: 10 9 it # QUALIFICATION REQUIREMENTS REMOVED f * MIL-M-38510/400 USAF) 25 August 1977 M ILITARY SP EC IF IC A T IO N M ICROCIRCUITS, D IG IT A L , N-CHANNEL, SILICON-GATE MONOLITHIC 8 B IT MICROPROCESSOR ( F IX E D INSTRUCTION) INACTIVE FOR NEW DESIGN AFTER DATE OF T H IS REV ISIO N

ZDP10

Abstract: TMP47C410AN 47c210 260l90 ZDP11 Tube 1P22 412a SDIP42 TMP47C210AF TMP47C210AN
Contextual Info: TOSHIBA TMP47C21OA/410A/991 CMOS 4-BIT M ICRO CO N TRO LLER TMP47C210AN, TMP47C21 OAF, TMP47C410AN TMP47C41 OAF The 47C210A/410A have high breakdown voltage outputs based on the TLCS-47 CMOS series. PART No. ROM TMP47C210AN 2048 x 8-bit TMP47C2 10AF TMP47C4 1OAN

40QA

Abstract: KMB7D0N40QA
Contextual Info: SEMICONDUCTOR 40QA TECHNICAL DATA N-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable

20am1

Abstract: nnc-20
Contextual Info: HALL CURRENT SENSORS Part Number Current Supply Am plifier Type Input =Open Loop =Closed Loop W /O =W ithout Am plifier W = Constant Current O ±15V Unless C Otherwise Amps Noted ± 15{12)V Output Sensitivity ^ ± 15 (12) V 5m A N N C -12A-L21 N N C -30G A

KMD7D5P

Contextual Info: SEMICONDUCTOR 40QA TECHNICAL DATA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for H battery protection circuit.