513K Search Results

Contextual Info: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash

ic 741c operational amplifier

Abstract: ad520j
Contextual Info: G E N E R A L DESCRIPTION The A N A L O G DEVICES A D 108, A D 2 0 8 and A D 3 0 8 are precision operational am plifiers fabricated on a single silicon chip. The use o f super beta transistors in the in p u t stage, along w ith improved process co n tro l, results in guaranteed in p u t

Contextual Info: ^EDI EDI7F81024C ELECTRONIC DESIGNS INC. High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module The ED17F81024C isa5V-0nly In-System Programmable and Erasable Read Only Memory Module. raiuiiosMCT Features Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo­

AD513J

Abstract: ad513 AD520J AD308 AD503 AD503J ad108a 741k TO99 package AD201A
Contextual Info: GENERAL The DESCRIPTION ANALOG DEVICES AD108, AD208 and AD308 are precision operational amplifiers fabricated on a single silicon chip. The use of super beta transistors in the input stage, along with improved process control, results in guaranteed input currents nearly a thousand times lower than industry standards such as the AD741.

000-3FF

Abstract: MDT10C55B
Contextual Info: MDT10C55B 1. General Description Power-on Reset Power edge-detector Reset This ROM-Based 8-bit micro-controller uses a fully Sleep Mode for power saving static CMOS technology process to achieve higher 5 types of oscillator can be selected by speed programming option:

Contextual Info: EDI7F81024C ELECTRONIC DESIGNS IN C .- High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The ED17F81024C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo­

mb89371

Abstract: MB89371AH mb89371a Visitor counter a calculator LCD display china usb dvd player repair guide PG00-00072-3E MB91305PMC-G-BNDE1 MB90F378 mb89537a 565 MB90350E
Contextual Info: FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600, Fax: +1-408-737-5999 http://www.fma.fujitsu.com/

Contextual Info: LT6118 Current Sense Amplifier, Reference and Comparator with POR Features Description Current Sense Amplifier – Fast Step Response: 500ns – Low Offset Voltage: 200µV Maximum – Low Gain Error: 0.2% Maximum n Internal 400mV Precision Reference n Internal Comparator

000-3FF

Abstract: 200NS 20MHZ 20MS MDT10C55B
Contextual Info: MDT10C55B 1．概述 电源边沿检测复位（PED） 这是一个 8 位基于 ROM 的微控制器，是由完全的静态 CMOS 睡眠低功耗模式 技术设计，集高速体积小、低功耗和高抗噪声一体的芯片， 5 种可选的振荡类型：

GHS multi V850 ld

Abstract: JBIG DECODER GHS linker IE-703000-MC green hills compiler manual v850 V810 ghs v850 compiler NEC V810 Ox02 V800
Contextual Info: USER’S MANUAL ¿¿SAP70732-B02 ¿¿SAP703000-B02 JBIG MIDDLEWARE TARGET DEVICE /jSAP70732-B02: V810 FAMILY /^AP703000-B02: V850 FAMILY™ NEC Corpwata 1996 Document No. U11057EJ2V0UMQ0 2nd edition Date Published October 1996 P Printed in Japan T.82 and T.85 related patents:

Analog Devices model 233J

Abstract: alfa uv API 45 AD0042C AC1007 analog devices TSDC1610 AD504 fetal monitor device circuit diagrams AD533J Helitrim AD 233J
Contextual Info: ANALOG DEVICES PRODUCT GUIDE Copyright 1975 by Analog Devices, Inc. FOREWORD This book is a guide to the broadest range of electronic compo­ nents and devices needed by designers of instrumentation and control systems which accept, analyze, process, convert, trans­

2N2700

Abstract: Mabuchi 12V Motor CMH25234B Mabuchi Motor 12v control motor dc 6v LT6108HMS8-1 Mabuchi Motor LTC6992-1 IRF9640 LT6108IMS8-2
Contextual Info: LT6108-1/LT6108-2 High Side Current Sense Amplifier with Reference and Comparator FEATURES DESCRIPTION Current Sense Amplifier – Fast Step Response: 500ns – Low Offset Voltage: 350µV Maximum – Low Gain Error: 0.2% Maximum n Internal 400mV Precision Reference

GHS linker

Abstract: V55PI Users Manual Instruction U10710E RX83 VR4102 V810 024 b01 V830 VR4100 U10661E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

T40217

Contextual Info: A _ sl PRODUCT NUMBER 94136 DIM " C " POSITION J SEE NOTE 3 MU *D* Dm "C m tm m ttth hhH iUllh h h H l H t i l l H i M n t l l U t n t EEZT c e n t r a l peg ^•|0Q.38 .oi5 |TYP. MOO N s * 55 j 0 - dim *r m a t'l c o d e to le ra n c e u n le s s o th e rw is e s p e c ifie d

2N2700

Abstract: CMH25234B IRF9640 equivalent control motor dc 6v MABUCHI RS-540SH 513K Mabuchi Motor CMH25 LT6109-2 LTC6246
Contextual Info: LT6109-1/LT6109-2 High Side Current Sense Amplifier with Reference and Comparators DESCRIPTION FEATURES Current Sense Amplifier – Fast Step Response: 500ns – Low Offset Voltage: 125µV Maximum – Low Gain Error: 0.2% Maximum n Internal 400mV Precision Reference

2N2700

Abstract: Mabuchi Motor 12v Mabuchi 12V Motor A50M LT6109-1 LTC6994-1 IRF9640 dc motor control circuit LT6109 LT6109-2
Contextual Info: LT6109-1/LT6109-2 High Side Current Sense Amplifier with Reference and Comparators DESCRIPTION FEATURES Current Sense Amplifier – Fast Step Response: 500ns – Low Offset Voltage: 350µV Maximum – Low Input Bias Current: 300nA Maximum n Internal 400mV Precision Reference

GHS linker

Abstract: smp830 U10710E U10661E V55PI Users Manual Instruction V810 V830 VR4100 AP7073 V55PI
Contextual Info: User’s Manual µSAP30100-B01 µSAP703000-B01 µSAP705100-B01 µSAP70732-B01 MH/MR/MMR Middleware Applicable devices µSAP30100-B01 : µSAP703000-B01 : µSAP705100-B01 : µSAP70732-B01 : Document No. U10338EJ4V0UM00 4th edition Date Published September 1998 J CP(K)

Contextual Info: LT6109-1/LT6109-2 High Side Current Sense Amplifier with Reference and Comparators DESCRIPTION FEATURES n n n n n n n n Current Sense Ampliier – Fast Step Response: 500ns – Low Offset Voltage: 350µV Maximum – Low Input Bias Current: 300nA Maximum Internal 400mV Precision Reference

Contextual Info: LT6108-1/LT6108-2 High Side Current Sense Amplifier with Reference and Comparator FEATURES n n n n n n n n DESCRIPTION Current Sense Ampliier – Fast Step Response: 500ns – Low Offset Voltage: 350µV Maximum – Low Gain Error: 0.2% Maximum Internal 400mV Precision Reference

2n2700

Contextual Info: LT6119-1/LT6119-2 Current Sense Amplifier, Reference and Comparators with POR Description Features Current Sense Amplifier – Fast Step Response: 500ns – Low Offset Voltage: 200µV Maximum – Low Gain Error: 0.2% Maximum n Internal 400mV Precision Reference

2n2700

Abstract: LT6108-2 LT6108-1 control motor dc 6v LT6108HDCB-2 rs-540sh Mabuchi Motor 12v
Contextual Info: LT6108-1/LT6108-2 High Side Current Sense Amplifier with Reference and Comparator FEATURES DESCRIPTION Current Sense Amplifier – Fast Step Response: 500ns – Low Offset Voltage: 125µV Maximum – Low Gain Error: 0.2% Maximum n Internal 400mV Precision Reference

1025K-1152K

Abstract: 897K-1024K
Contextual Info: ^E D I _EDI7F82048C E le c t r o n ic D e s ig n s I n c . High Performance Sixteen Megabit Flash EEPROM ip ìe u ìd ìà ^ y 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module.

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX