4 WG 130 Search Results

62734

Contextual Info: DO NOT S C A L E METRIC DI ME NS IO NS IN INCH THIRD ANGLE PROJECTION WIRE RANGE : O, 8—2, 0mm2 0 8-14 A WG INSULATION RANGE : 3,30 - 4 , 4 5 C. 130-. 1752 DIA,_ 4, 07 •- 1 5 8 ^ VIEW A-A 2, 92 C. 7 15; 3,30 . 130)J - 8 , 74C. 344) 1 D 3 .68 a M 5 >

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0014=12^ 604 « S M Ù K PRELIMINARY KM M5322000W/WG DRAM MODULES 2M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5322000W is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung

NEC D 809 F

Abstract: NEC D 809 71383B NEC D 809 k
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm

L to Ku Band Low Noise GaAs MESFET

Abstract: NE71383B NE71383
Contextual Info: L to Ku Band Low Noise NE71383B N-Channel GaAs MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES 2.5 • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: WG = 280 µm

C10535E

Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION

hughes

Contextual Info: □ WG SIZE B DASH ND -1 -2 -3 -4 -5 ASSEMBLE A CABLE PER ACCOMMODATED DÍM HUGHES 720413-1 CDAX ,142 HUGHES 720412-1 (CDAX) ,110 HUGHES 710923-1 (TRIAX SHEET 3 ,115 M17/113-RG316 (CDAX) ,108 HUGHES 735499-1 (CDAX) .187 DATA CONTAINED IN THIS DOCUMENT IS

AM/SSC 9500 ic data

Contextual Info: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 KM536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM536512W-6 60ns 15ns 110ns KMM536512W-7 70ns 20ns

Contextual Info: S A MS UN G E L E C T R O N I C S INC b?E D • 7 ^ 4 1 4 2 0D1521S 021 ■ SFIGK KM M532512W/WG DRAM MODULES 512Kx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532512W is a 512K bit x 32 Dynam­ ic RAM high density memory module. The Samsung

5570

Abstract: C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 µm • 4-pin super minimold package

C10535E

Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
Contextual Info: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package

D01471

Contextual Info: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam­ ic RAM high d e n sity m em ory m odule. The Sam sung

TUD22

Contextual Info: 4 THIS DRAWINO IS UNPUBLISHED. <£ RELEASED FOR PUBLICATION flV AMP INCORPORATED. COPYRIGHT 13 , 19 LOC G ALL RIGHTS RESERVED. REVISIONS DIST 14 LTR H DESCRIPTION DATE REV / 0720-0977-96 3JUN96 DWN APVD ME BB D D LR71ââ W IR E BODY ^ L ^ ) RAN G E 2 2 -1 G A WG

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm

Contextual Info: MIS DFtAtfl WG 13 UNPUBLISHED. REVISIONS ï\ RESERVED. AMP PR0DU&T5 I DE5CR ]PT] CN " 5UP5D 2 — 5 PER 0 1 6 0 -4 75 6 -95 " REV PER EC 0320-130-97 REC EPTA C LE TU B E A A LO AD ED ACCEPTS FOR A . O O e - .O T 4 A U T O M A T IC TH IC K I.C . LEAD . I N S E R T IO N .

sl2 357

Contextual Info: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold

NE76118

Abstract: NE76118-T1 NE76118-T2
Contextual Info: GaAs MESFET L TO S BAND LOW NOISE AMPLIFIER • LOW COST MINIATURE PLASTIC PACKAGE SOT-343 25 4 20 Noise Figure, NF (dB) GA • HIGH ASSOCIATED GAIN: 13.5 dB typical at 2 GHz • LG = 1.0 µm, WG = 400 µm • TAPE & REEL PACKAGING DESCRIPTION The NE76118 is a low cost gallium arsenide metal semiconductor field effect transistor housed in a miniature (SOT-343)

airborn WG

Abstract: airborn connector wgv WGKA80SSY WGKA160SSY
Contextual Info: AirBorn THE CONNECTOR COMPANY WG80PR9SY 3 • ROW PC Card to Chassis . 100 " WG - WGKA 80 & 160 Contacts WGKA80SSY .5 8 5 .3 3 5 .085 I - .0 3 0 ± .0 0 1 DIA TYP .0 9 4 • .0 8 2 DIA TYP POSITION #1 POSITION #1 -1 I 1 .100 TYP .125 D IA - 1 TYP .0 5 0 TYP - 1

Contextual Info: MIS DFtAtfl WG 13 UNPUBLISHED. REVISIONS DESCRIPTION RESERVED. AMP PRQDU&T5 I REV, EC 0502-0066-96 REV PER EC 0320-130-97 REC EPTA C LE A A A TU B E ACCEPTS A 0 0 6 - . OT 4 TH IC K I.C . LEAD . L O A D ED . TWO . 0 0 0 0 1 5 M I N T H K . GOLD S T R I P E S I N C ON TA C T A RE A WI TH T I N - L E A D

airborn connector wg

Abstract: airborn connector wgv
Contextual Info: AirBorn THE CONNECTOR COMPANY 3 • ROW PC Card to Chassis . 100 " WG - WGDXA 80 & 160 Contacts .0 8 5 I - .0 3 0 ± .0 0 1 DIA TYP .585 .3 5 0 .3 3 5 .0 8 2 DIA TYP .175 I— POSITION #1 -1 I F A ü 1 .100 TYP .0 5 0 TYP - 1 .125 D IA - 1 TYP _ .130 TYP

OJE-SH-105LMH

Abstract: OJE-SH-112-LMH oje-sh-124dm OJE-SS-112HM2 OJ-SH-112LMH OJ-SH-112LM oje-sh-105dm OJ-SH-124LM OJ-SS-112HMF OJ-SS-124HM2
Contextual Info: Catalog 1308242 Issued 3-03 PDF Rev. 11-04 OEG General Purpose Relays PCB Relays Typical Part Number B H F ,095 OEG Ordering Information SH -1 12 L M Ordering Information OJE -SH -1 12 L M H OEG F ,095 Typical 1. Basic Series: OJ = 4kV dielectric, coil and contacts.

OJE-SH-112HM

Abstract: OJE-SH-112DM OJ-SH-124LMH AT/OJE-SH-105LMH OJE-SH-112LMH,000
Contextual Info: Catalog 1308242 Issued 3-03 PDF Rev. 11-04 OEG Ordering Information SH -1 12 L M H General Purpose Purpose Relays Relays General PCB Relays Relays PCB F ,095 Typical Part Number B OJE OEG Ordering Information -SH -1 1. Basic Basic Series: OJ OJ = = 4kV 4kV dielectric,

CL-SH120

Abstract: sh1-20
Contextual Info: CIRRUS LOGIC PRELIMINARY DATA SHEET J u n e, 1987 l ! W Ê rnm FEATURES CL - SH 130 Disk interfaces supported include: ST506/412, ST412HP, ESDI, SA1000 and SMD Winchester Hard Disk Formatter Controls custom drive interfaces Works with all disk encoding schemes

79016

Abstract: h129 T568A T568B flat conductor cable bottom shield white-orange crimping tool equivalent
Contextual Info: Application Specification 114-13035 8-Position Category 6 Modular Plug Connector NOTE i 13 SEP 07 Rev G All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters [and inches]. Unless otherwise specified, dimensions have a tolerance of +0.13 [+.005] and angles have a tolerance of +2 .