4 WG 130 Search Results

62734

Contextual Info: DO NOT S C A L E METRIC DI ME NS IO NS IN INCH THIRD ANGLE PROJECTION WIRE RANGE : O, 8—2, 0mm2 0 8-14 A WG INSULATION RANGE : 3,30 - 4 , 4 5 C. 130-. 1752 DIA,_ 4, 07 •- 1 5 8 ^ VIEW A-A 2, 92 C. 7 15; 3,30 . 130)J - 8 , 74C. 344) 1 D 3 .68 a M 5 >

SIA 6822

Contextual Info: L to Ku Band Low Noise N-Channel GaAs MESFET FEATURES NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz m 2, < CD HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz GATE WIDTH: Wg = 280

z 0607

Contextual Info: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: Wg = 280 \im

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0014=12^ 604 « S M Ù K PRELIMINARY KM M5322000W/WG DRAM MODULES 2M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KMM5322000W is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung

NEC D 809 F

Abstract: NEC D 809 71383B NEC D 809 k
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 4 GHz • High associated gain Ga = 14 dB TYP. a t f = 4 G H z • Gate width: Wg = 280 fim • Gate Length: Lg = 0.3 /xm

sg 6822

Abstract: ne71383B sg 8841 ku-band oscillator D 1307
Contextual Info: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ a tf = 12 GHz m • HIGH ASSOCIATED GAIN: < 5 14 dB typ at f = 4 GHz ro • GATE WIDTH: Wg = 280 jim

L to Ku Band Low Noise GaAs MESFET

Abstract: NE71383B NE71383
Contextual Info: L to Ku Band Low Noise NE71383B N-Channel GaAs MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES 2.5 • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: WG = 280 µm

C10535E

Abstract: NE713 NE71300 NE71300-L NE71300-M NE71300-N NE71383B
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES x Low noise figure NF = 0.6 dB TYP. at f = 4 GHz x High associated gain Ga = 14 dB TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm ORDERING INFORMATION

1Mx4

Contextual Info: DRAM MODULE 4 Mega Byte KMM5361203W/WG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203W is a 1M bit x 32 Dynamic RAM high density memory module The

hughes

Contextual Info: □ WG SIZE B DASH ND -1 -2 -3 -4 -5 ASSEMBLE A CABLE PER ACCOMMODATED DÍM HUGHES 720413-1 CDAX ,142 HUGHES 720412-1 (CDAX) ,110 HUGHES 710923-1 (TRIAX SHEET 3 ,115 M17/113-RG316 (CDAX) ,108 HUGHES 735499-1 (CDAX) .187 DATA CONTAINED IN THIS DOCUMENT IS

AM/SSC 9500 ic data

Contextual Info: DATA SHEET_ GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEA TU R E S • High Power Gain: Gs = 5.0 dB TYP. @ f = 12 GHz • Gate Length : Lg • Gate Width : Wg • 4-pin super minimold •

SG 2368

Abstract: sg 2534 DELTA 0431 180/TTK SG 2368
Contextual Info: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 • GATE WIDTH: Wg = 330 jim • 4 PINS SUPER MINI MOLD

Contextual Info: S A M S U N G E L E C T R O N I C S INC b7E » • 7 ^4 1 4 5 KM536512W/WG 0 D1 5 2 1 5 54T ■ SMGK DRAM MODULES 512KX36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM536512W-6 60ns 15ns 110ns KMM536512W-7 70ns 20ns

0419 11 1301 00 schrack

Abstract: relay 1201
Contextual Info: General Purpose Relays Rast 5 Power Relay 419 11 EA/. Q 2 pole 16 A Q Safety mains insulation Q Quick connect terminals 6.3 x 0.8 mm Q Contact gap > 3 mm Q 4 kV / 8 mm coil-contact Q Snap or screw mounting Q WG version: Product in accordance to IEC60335-1

CA51 capacitor

Contextual Info: DRAM MODULE 4 Mega Byte KMM5321200W/WG Fast Page Mode 1 Mx32 DRAM SIM M , 1K Refresh , 5V Using 1M x16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KMM 5321200W is a 1M bit x 32 D ynam ic RAM high density m em ory module. The

Contextual Info: S A MS UN G E L E C T R O N I C S INC b?E D • 7 ^ 4 1 4 2 0D1521S 021 ■ SFIGK KM M532512W/WG DRAM MODULES 512Kx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532512W is a 512K bit x 32 Dynam­ ic RAM high density memory module. The Samsung

5570

Abstract: C10535E NE34018 NE34018-T1 NE34018-T2 VP15-00-3 4069 NOT GATE IC nec 4308 IC GA-08
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 µm • 4-pin super minimold package

g2ns

Abstract: C10535E NE72118 NE72118-T1 NE72118-T2 NEC k 2134 812 421
Contextual Info: DATA DATASHEET SHEET GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: GS = 5.5 dB TYP. @f = 12 GHz • Gate Length: Lg = 0.8 mm recessed gate • Gate Width: Wg = 330 mm • 4 pins super mini mold

C10535E

Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3 ne72218 v58
Contextual Info: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length : Lg = 0.8 µm • Gate width : Wg = 400 µm • 4-pin super minimold package

D01471

Contextual Info: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam­ ic RAM high d e n sity m em ory m odule. The Sam sung

NE76038

Contextual Info: LOW NOISE L TO Ku-BAND Ga As MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 3.5 21 Ga 18 3 Lg = 0.3 im, Wg = 280 )im

ne72218 v58

Abstract: NE72218 NE72218-T1 NE72218-T2 VP15-00-3
Contextual Info: DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 µm recessed gate • Gate Width : Wg = 400 µm • 4-pin super minimold • Tape & reel packaging only available

TUD22

Contextual Info: 4 THIS DRAWINO IS UNPUBLISHED. <£ RELEASED FOR PUBLICATION flV AMP INCORPORATED. COPYRIGHT 13 , 19 LOC G ALL RIGHTS RESERVED. REVISIONS DIST 14 LTR H DESCRIPTION DATE REV / 0720-0977-96 3JUN96 DWN APVD ME BB D D LR71ââ W IR E BODY ^ L ^ ) RAN G E 2 2 -1 G A WG

NEC D 809 F

Abstract: NEC D 809 L transistor NEC D 986 E7138
Contextual Info: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm