3TC2 Search Results

tda 3310

Abstract: SAA2003 SAA2013 SAA2013H
Contextual Info: P r e lim in a r y s p e c if ic a tio n P h ilip s S e m ic o n d u c to r s Adaptive allocation and scaling for PASC coding in DCC systems_ SAA2013 FEATURES • Wide operating voltage range: 2.7 to 5.5 V • Low power consumption: 13 mW; 3.0 V

rs808

Abstract: HUF76112SK8T AN7254 AN7260 AN9321 AN9322 HUF76112SK8 MS-012AA TB334
Contextual Info: HUF76112SK8 Data Sheet December 2001 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low

AN7254

Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
Contextual Info: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

75344G

Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
Contextual Info: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

AN9321

Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Contextual Info: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features

AN9321

Abstract: AN9322 HUFA75639S3R4851 TB334 TC217
Contextual Info: HUFA75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per

76439S

Abstract: HUFA76439P3 HUFA76439S3S HUFA76439S3ST TB334
Contextual Info: HUFA76439P3, HUFA76439S3S Data Sheet January 2002 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76439P3 HUFA76439S3S • Ultra Low On-Resistance

fairchild to-220ab 75343P

Abstract: 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334
Contextual Info: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75321D3ST Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

76407DK8

Contextual Info: HUFA76407DK8T_F085 October 2010 Data Sheet 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V JEDEC MS-012AA BRANDING DASH

76645P

Abstract: 76645S TB334 HUFA76645P3 HUFA76645S3S HUFA76645S3ST
Contextual Info: HUFA76645P3, HUFA76645S3S Data Sheet January 2002 75A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76645P3 HUFA76645S3S Features • Ultra Low On-Resistance

75329D

Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
Contextual Info: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: HUF76609D3S October 2013 Data Sheet N-Channel Logic Level UltraFET Power MOSFET 100 V, 10 A, 165 mΩ Packaging Features JEDEC TO-252AA DRAIN FLANGE • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models

Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding

siemens 3tb44

Abstract: 3tb52 SIEMENS 3TH 82 catalog for 3RT series contactor* siemens 3TH43 siemens 3th42 3TH42 siemens contactor IEC 60947 VDE 0660 3TB44 siemens magnetic contactor
Contextual Info: 3RT, 3RH, 3TB, 3TC, 3TH, 3TK Contactors for Special Applications Contactors with Extended Tolerance 0.7 . 1.25 x Us , for Railway Applications 3RT10 motor contactors, 5.5 . 45 kW DC operation • DC solenoid system Screw terminals For screw and snap-on mounting onto standard mounting rail

HUF75321D3

Abstract: 75321D AN9321 HUF75321D3S HUF75321D3ST TA75321 TB334
Contextual Info: HUF75321D3, HUF75321D3S Data Sheet 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

fairchild to-220ab 75343P

Abstract: 75343G 75343P 75343S HUFA75343G3 HUFA75343P3 HUFA75343S3S HUFA75343S3ST TA75343 TB334
Contextual Info: HUFA75343G3, HUFA75343P3, HUFA75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

75631P

Abstract: 75631S AN9321 HUFA75631P3 HUFA75631S3ST TB334
Contextual Info: HUFA75631P3, HUFA75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA75631P3 HUFA75631S3ST Features • Ultra Low On-Resistance

75631P

Abstract: AN9321 AN9322 HUF75631P3 HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3ST Features • Ultra Low On-Resistance

76609D

Abstract: AN9321 AN9322 HUF76609D3 HUF76609D3S HUF76609D3ST TB334
Contextual Info: HUF76609D3, HUF76609D3S Data Sheet December 2001 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUF76609D3S HUF76609D3 Features • Ultra Low On-Resistance

76419D

Abstract: AN9321 HUFA76419D3 HUFA76419D3S HUFA76419D3ST TB334 AN-7254 HUFA76419D
Contextual Info: HUFA76419D3, HUFA76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76419D3S HUFA76419D3 Features • Ultra Low On-Resistance

76437S

Abstract: HUF76437S3ST AN9321 HUF76437P3 HUF76437S3S TB334
Contextual Info: HUF76437P3, HUF76437S3S Data Sheet December 2001 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF76437P3 HUF76437S3S Features • Ultra Low On-Resistance

76423P

Abstract: AN9321 HUF76423P3 HUF76423S3S HUF76423S3ST TB334 76423S
Contextual Info: HUF76423P3, HUF76423S3S Data Sheet December 2001 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76423P3 HUF76423S3S Features • Ultra Low On-Resistance