3J SMD Search Results

S-55171

Abstract: k 2101 equivalent LED 16000 mcd
Contextual Info: 223 Brightness Bin Selection for SMD Group Brightness Bin Selection for Lamp Luminance in mcd Iv Min. Max. A 0.12 0.18 B 0.18 C Group Luminance in mcd (Iv) Min. Max. 3G 0.3 0.4 0.28 3H 0.4 0.5 0.28 0.45 3J 0.5 0.7 D 0.45 0.71 3K 0.7 0.9 E 0.71 1.12 3L 0.9

SED1522FOA

Abstract: SED1520 SED1522F SED1520F SED1520F0A SED1522 DL132 ScansUX987 120x32 152IF
Contextual Info: USER MANUAL SED1520 1.95 GRAPHIC CONTROLLER SED 1520 Ì. Display start line register n - — Line counter ~TT~ 8 3 Do~Dr Vl,V2,V3,V4,V5 Line address decoder &O 3’ - a COMo to C O M 15 Ao.CS ^ -g. IO C71*D < RD.W R E,R/W ) ms SEGo to S E G ôo 3J > RES

PM4358

Abstract: HMVIP standard PMC-2051289 PMC-2021518
Contextual Info: ul y, 20 06 11 :1 5: 06 PM COMET OCTAL Hardware Specification Released Th ur sd ay ,1 3J PM4358 rtm in er In co n COMET OCTAL Released Issue No. 3: June 2006 Do wn lo ad ed by C on te n tT ea m of Pa Hardware Specification Proprietary and Confidential to PMC-Sierra, Inc., and for its Customers’ Internal Use.

smd j3y

Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O

Contextual Info: Diodes Schottky Barrier Diode RB731U •A p p lic a tio n s •E xternal dimensions Units: mm High speed switching 2 9 + 0 .2 •Features ,1 .9 ± 0 .2 _ ' 10.9 5 ,095 1JDesigned for mounting on small surface areas (SMD6) • 3)Three diodes situated in parallel for easy installation.

222K 1KV

Abstract: capacitor 222k 1kv 103 1KV SWC 221K 1kv b 472K 1kv ceramic capacitor B 471K 1KV E 472M 3KV capacitor 271k 2kv 102K 1KV CAPACITOR 102k 2kv
Contextual Info: Ceramic Type Ceramic Type Capacitance in picofarads The first two digits indicate significant digits. The 3rd digit indicate the number of zero following. R denotes decimal. Ex.)0.5㎊-OR5, 10㎊-100, 100㎊-101 Introduction Cap. Tolerance SAMWHA disc ceramic capacitors are designed and producted to offer the user capacitors with high

Contextual Info: SMD 3MM SQUARE/SINGLE POLE DOUBLE THROW SEALED/ROTARY SWITCH • ■ ■ ■ ■ ■ Compatible with all surface mount manufacturing processes 50 or 2000 cycle rotational life Tape and reel packaged Withstands 260° soldering heat Low level signal switch Patent No 5043695

RF195

Abstract: RF-195 IEEE1478 IEEE-1478 smd code 3b SMD 3B military Antenna TIA-329 3.5 mm ipx7 plug
Contextual Info: Surface Mount, MIMO Mobile WiFi • Multiple-Input-Multiple-Output antenna design ■ Models with 2 or 3-cables: each cable with identical bandwidth coverage 2-cables 3-cables ■ Passed Industry and Military shock and vibration standards MIMO Low Profile Surface Mount Antennas

ssc sl 136 4

Abstract: 221k capacitor 4kv fz 79 470 16V 103 1KV SWC LR603 capacitor 222k 1kv 222K 1KV E 222M 2KV 471k 2kv LK ac 472m
Contextual Info: Ceramic Type Ceramic Type Capacitance in picofarads The first two digits indicate significant digits. The 3rd digit indicate the number of zero following. R denotes decimal. Ex.)0.5㎊-OR5, 10㎊-100, 100㎊-101 Introduction Cap. Tolerance SAMWHA disc ceramic capacitors are designed and producted to offer the user capacitors with high

SMD TRANSISTOR MARKING 3B

Abstract: 3F smd marking SMD Transistors 3f smd transistor marking 3j smd transistor 3j smd transistor marking af KC857B 3F smd transistor smd transistor 3F MARKING SMD PNP TRANSISTOR
Contextual Info: Transistors SMD Type PNP Transistor KC856A,B/KC857A,B,C/KC858A,B,C BC856A,B/BC857A,B,C/BC858A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion

3F smd marking

Contextual Info: Transistors IC SMD Type Product specification KC856A,B/KC857A,B,C/KC858A,B,C BC856A,B/BC857A,B,C/BC858A,B,C SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 For Switching and AF Amplifier Applications +0.1 1.3-0.1 +0.1 2.4-0.1 Ideally suited for automatic insertion

SMD T6s

Abstract: SMD code T6s
Contextual Info: SMD TVS Arrays Two Terminals SMD TVS PPPM(W) VRWM(V) VBR(V) Max. Clamping Voltage @ IPPM 8x20µs VC(V) P 5 T 6 50 50 50 50 3.3 5 3.3 5 4.2 5.8 4.2 5.8 - - 25 15(Typ. ) Uni Uni Bi Bi TVD03WU TVD05WU TVD08WU TVD12WU TVD15WU TVD24WU TVD36WU GS GT GU GV GW GX

TRANSISTOR SMD MARKING CODE 3f

Abstract: transistor smd marking code 3l SMD TRANSISTOR MARKING 3B 3F smd transistor TRANSISTOR SMD MARKING CODE 3K smd transistor 3f smd transistor 3g TRANSISTOR SMD MARKING CODE 3G smd transistor 3K transistor smd 3E
Contextual Info: SMD General Purpose Transistor PNP BC856/BC857/BC858 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208

Contextual Info: WIDEBAND RF TRANSFORMERS THROUGH-HOLE AND SMD • Fully encapsulated ■ Low profile ■ 6 pin DIP and SMD ■ Low insertion loss ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 ft to 800 ft nominal 50 ft RF2, RF3, RF4 Series Bourns Wideband RF Transformers

Contextual Info: ACS03MS fü HARRIS S E M I C O N D U C T O R Radiation Hardened Quad 2-Input NAND Gate with Open Drain January 1996 Features Pinouts Devices QML Qualified in Accordance with MIL-PRF-38535 Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Harris’ QM Plan

Contextual Info: Glass Encapsulated SMD Varistor MLV VJ12, 20, 13, 14, 15 Industrial MLV Range – M0 Series INDUSTRIAL MLV RANGE – VJ12, 20, 13, 14, 15 M0 SERIES FEATURES GENERAL CHARACTERISTICS • Glass encapsulation device with very low leakage current under DC operating conditions

x25-m

Abstract: MARKING H140 diode b tu 25 c JB SMD MARKING
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S4M U nit-m m W eight 0.326g Typ 40V 3A ® (g)(4) • SMD Feature • SMD • Tj=150lC • Tj=150°C • P r r s m T V ^ V ï ^ iS Ü Œ • P rrsm Rating High lo Rating-Small-RKG MainUse

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

smd transistor 3j

Abstract: smd transistor 3d 3D smd marking 3F smd transistor BC857 sot package sot-23 smd transistor marking 3j sot-23 marking 3g BC856 BC856A BC856B
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking

Contextual Info: 33M ir a is ; HS-1100RH Radiation Hardened, Ultra High S p e ed Current F eed b ack Am plifier August 1996 Features Description • Electrically Screened to SMD 5962F9467602VPA The HS-1100RH is a radiation hardened high speed, wideband, fast settling current feedback amplifier. Built with

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E

smd code Yj 33

Abstract: BJ SMD IC l11J L2Bj
Contextual Info: HS-MS64RH, HS-MS256RH S em iconductor March 1999 Data Sheet Advance Information Radiation Hardened 64Mbyte and 256Mbyte Memory Systems File Number 4726 Features • Radiation Hardness Harris offers large, Radiation Hardened Memory Systems for use in space. Single-packaged memories in 64 Megabytes

sy hs 220

Abstract: T17S h3g2
Contextual Info: HARRIS æ H S - 1 1 2 0 R H S E M I C O N D U C T O R Radiation Hardened, Ultra High Speed Current Feedback Amplifier with Offset Adjust March 1996 Features Description • Circuit Will Be Supplied to a SMD and QM L Class V The HS-1120RH is a radiation hardened, high speed,