3FT DIODE Search Results

adg421

Abstract: G421D
Contextual Info: 19-0137 ; Rev 1; 3/94 A l i f l X I A I Im proved Low-Power, CMOS Analog Sw itches w ith Latches _N e w Features ♦ Plug-In Upgrades for Industry-Standard DG421/DG423/DG425 ♦ Improved r DS ON Match Between Channels (3ft max) ♦ Guaranteed rFLAT(ON) Over Signal Range (4ft max)

BUZ11

Abstract: BUZ11s2
Contextual Info: SILICÓNIX INC 1ÖE D XKS3& • Ö25M73S 0014505 =1 ■ BUZ11, BUZ11S2 T-3ft -11 N-Channel Enhancement Mode Transistors TQ-220AB TO P VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS BUZ11 BUZ11S2 O •d "■ sr (A 50 0.040 30 60 0.040 30 1 GATE 2 DRAIN (Connected to TAB)

L724

Abstract: el7240C
Contextual Info: EL7240C /EL7241C EL7240C/EL7241C HIGHPERFOfiMANCEANAUH3 INtESflAtEBCifKUtTS High Speed Coil Drivers F e a tu r e s G e n e r a l D e s c r ip t io n • • • • • • • T he EL7240C/EL7241C h igh speed coil drivers accept logic in ­ puts w hich independently control a p air of 3ft PM O S F E T ’s.

fcqs10a045

Abstract: 10a45 IMTIA
Contextual Info: SBD Cathode common 10A 45V Tjw150V Fully Molded similar to TO-22QAB FCQS10A045 Nihon Inter Electronics Corporation Specification. mm Construction v ' s y h y 7 y j Schottky B arrier Diode Application H igh Frequency Rectification k MAXIMUM RATINGS T a = 25°C U nless otherw ise specified

aeir

Abstract: 1DI75H-120 M206 pohi 111-BA OA75 1DI75H-120C75A DF RV transistor
Contextual Info: 1DI75H-120 75a : Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • ¡Ü IÎŒ High Voltage Including Free Wheeling Diode • A SO A '“j2 ;i' Excellent Safe Operating Area Insulated Type IffiiÉ • A p p lic a tio n s • Chopper Controls • D C t-* # ]«

B-457

Abstract: b457 2DI100Z-140 30S3 T151 T810 SM470 B-459
Contextual Info: 2DI100Z-140 iooa Outline Drawings POWER TRANSISTOR MODULE ’ Features • BüfÆ High Voltage • 7 lJ— 's W tâ —Ki^930c Including Free Wheeling Diode • A SO ^ / av,' Excellent Safe Operating Area Insulated Type • A pplications » Power Switching

A479

Abstract: r-14 a479
Contextual Info: ESAG63-004 2 oa SCHOTTKY BARRIER DIODE • 4 ^ ^ : Features • 1ftVF Low V F m m Connection Diagram Super high speed sw itchin g. • 1 u - :t - High reliability by planer design. ■ fflìÉ : Applications High speed pow er sw itch in g . M axim um Ratings and Characteristics

200Z-100

Contextual Info: mi F U JI [IT L M g ü M lE 1-iooovJ T 200 a 2 0 U0 7^ - 1I 0U 0 U • L r» ^ U l £ /< 7 — POWER TRANSISTOR MODULE f 13 ■ 21 Outline Drawings 29 : F e a tu re s • ¡SIiJ± High Voltage V • 7 'J — 4 • ASO M S i ' KF*9j& Including Free W heeling Diode

10A80

Contextual Info: 10A80VT»150V FuSy Molded similar to TO -220AC 0*^ FSHS10A08 Nihon Inter Electronics Corporation Specification Construction fflìÉ Application is a -yb yr Schottky Barrier Diode k High Frequency Rectification J f c f c Ï E MAXIMUM RATINGS Ta=25'C: Unless otherwise specified

Diodo Schottky

Abstract: DIODO
Contextual Info: 4A 65VT»150t Fully Molded similar to TO-220AC FSQS04A065 ttfl« 0 * ^ Nihon Inter Electronics Corporation Specification. lie 'S3 y Construction f f lìÉ Application h K ' 7 ? ' 4 Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25cC Unless otherwise specified

FCHS20A065

Abstract: FCHS20A
Contextual Info: 20A 6 5 V T]w150 V ^^O m hcom aJn0 FCHS20A065 Fully Molded sim ilar to TO-220AB ttti» Nihon Inter Electronics Corporation Specification '> 3 * h Construction fflìÉ Application y r y4 K Schottky Barrier Diode High Frequency Rectification MAXIMUM RATINGS Ta=25°C: Unless otherwise specified

Contextual Info: E R A 8 4 - 0 9 i a s ± • £ f 'I « ^ î- k : Outl i ne D raw ings SCHOTTKY BARRIER DIODE : Feat ures • te V F ■ Low VF : M arking Ä i - 3 - K :if Super high speed sw itching. C o lo r co d e : B lue • ■ f i '- i — m fit:,* * » f t i a t i

BI 344 TRANSISTOR

Abstract: transistor 3Ft B341
Contextual Info: 1 D I 3 M P - 1 2 3 A ï ± , , _ . ^ : Outline Drawings POW ER T R A N SIST O R M ODULE •¡HJi: : Features • hFE * ''« l' High DC Current Gain • « » ¡» ■ ftB E n rfll 2M0 : Applications "TI • i/L ffi'f w < — 9 General Purpose Inverter

1FI250B-060

Contextual Info: 1 FI250B-060 250a ^ • *± i W ’+ S i : O u tlin e D r a w in g s FAST RECOVERY DIODE MODULE ■ 4# : Features Short Reverse Recovery Time • t&mimtfm.'M Variety of Connection Menu •mm Insulated Type I Applications • Arc-Welders • Kffl • Free-Wheeling Diode

vfo schematic

Abstract: 2FI100A AC1500V T810 p553 axon A1504C
Contextual Info: 2 F I 1 0 0 A 2 xiooa £ ± ✓ '• 7 — IW M i i : O u tlin e D ra w in g s FAST RECOVERY DIODE MODULE : Features • Short Reverse Recovery Time • mmmmtfmn • Variety of Connection Menu Insulated Type • f f liis : A p p lica tio n s Arc-Welders

IAI5

Abstract: 2FI50G T151 2FI50
Contextual Info: 2 R 5 0 G 2 x 50A : Outline Drawings FAST RECOVERY DIODE MODULE Features • • Short Reverse Recovery Time • Variety of C onnection M enu • Insulated Type : Applications • y -* » * * tlia * a u s • 7 U— Arc-W elders — Kffl • * Free-W heeling Diode

51135

Abstract: T460 ERD32 T151 T760 T930 M4HM
Contextual Info: E R D 3 2 3 a i O utline D raw ings FAST RECOVERY DIODE F e a tu re s : M arking S uper high speed sw itching • 1SVF A 5 - 3 - K :« Color code : Orange Low V F Large cu rre n t • sw um High reliability Abridged type name § WE? 5* Voltoge class DyUio.

saia

Abstract: ESJA98 ESJA98-06 ESJA98-08
Contextual Info: E S J 9 A 8 6 k v , 8 k v t K ± ' i Kw i 3? ' f k •W B'+sS : Outline Drawings HIGH VOLTAGE SILICON DIODE ESJA98I*, fcl ESJA98 is high reliability resin molded type high seepd hig voltage diode in small size package which is sealed multilayed mesa type silicon chip by epoxy resin.

transistor b228

Abstract: transistor Sh 550 2DI240A-055 35-40kgf-cm B-228 LC240A BA rx transistor
Contextual Info: 2Dl24OA-O55 240A >£ • Outline POWER TRANSISTOR MODULE _ a»o : Features • Drawings M) 180 . " "] æ a ' t -a n ¿1 - - H igh V o lta g e In c lu d in g Free W h e e lin g D io d e • ASO E xcellent Safe O p e ra tin g Area • TibiyjM Insu lated Type

C2101

Abstract: 30S3 T151 T760 T820 YG802C06
Contextual Info: YG802C06<ioa : Outline D raw ings SCHOTTKY BARRIER DIODE Features Insulated package by fully m olding. • 1&VF Low V h• 7> 4''/* > V X £ -YV 1 k% \z.& s.' C o n nection D iag ram Su p er high speed sw itching. • T V - * - t t n High reliability by planer design.

Contextual Info: P G 1 5 1 S 1 5 8 A FAST RECOVERY DIODE : Features • s s ffiT v , D a m p e r d io d e fo r h ig h d e fin itio n TV and h ig h re so lu tio n d is p la y . • ISyft Wffi¥ mltd ftfc7 /WE-Jl-V94-7 Connection Diagram Insu la ted package by fu lly m o ld in g .

diode ja8

Abstract: NE y Ja8 MARK 8E diode esja ne ja8 HIGH VOLTAGE DIODE 6kv HH1T 30S3 ESJA88 ESJA88-06
Contextual Info: ESJA88 6kv, 8 k V £ ± 'J *-K : Outline Drawings HIGH VOLTAGE SILICON DIODE D 7 hNo. ESJA881*, ^ tiv~ V-7—9 lot No. \ E * « * tt« » * - ^ K s * E 5 fc * ^ * - K T T o ESJA88 is high reliability resin molded type high voltage /cathode Mark \ / ^ 2.5

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: * "j ? '> - ' > ? L * 7 E L -S K U *, fcKW^GaAsSSs^Sjfe^-f * - $ !•» • *& DIMENSIONS Unit: mm) K-Cto R ^ ttP ia ^ tR C S l^ « r« « > & *x a » ^ H t t w r * c t * < T S i - r . The EL-SKL, a high power GaAs IRED mounted in a miniature, hermetically sealed "Pill" type package, is