3904S Search Results

th 2267

Contextual Info: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)

Q62702-A1202

Abstract: SMBT 3904S 1N916 3904S VPS05604
Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3904S (NPN)

3904S

Abstract: 3904 1N916 Q62702-A1201 VPS05604 5b1 transistor VPS0560
Contextual Info: SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP)

ic power 22E

Abstract: 3904S SMBT 3904S 1N916 VPS05604
Contextual Info: SMBT 3904S NPN Silicon Switching Transistor Array 4
High DC current gain: 0.1mA to 100mA 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package
Complementary type: SMBT 3906S (PNP)

Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1 mA to 100m A • Low collector-em itter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package • C om plem entary type: SM BT 3906S (PNP)

3904S

Abstract: wi fi marking code transistor HK
Contextual Info: SIEMENS SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 ^ ^ • Two galvanic internal isolated Transistors with high matching in one package • Complementary type: SM BT 3906S (PNP)

ic power 22E

Abstract: SMBT 3904S 1N916 3904S VPS05604
Contextual Info: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package • Complementary type: SMBT 3904S (NPN)

6c2 transistor

Contextual Info: SIEMENS SMBT 3906S PNP Silicon Switching Transistor Array 4 High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package Complementary type: SMBT 3904S (NPN) 2

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

sot23 s1a marking

Contextual Info: SMBT3904.MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For 3904S: Two galvanic internal isolated transistors with good matching in one package • Complementary types: SMBT3906. MMBT3906

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

LM83

Abstract: j1n transistor diode BY 127 code j1n Transistor d2t 78 zener diode data 2N3904 ADM1021 LM83CIMQA LM83CIMQAX LM84
Contextual Info: Semiconductor tß LM83 Triple-Diode Input and Local Digital Temperature Sensor with Two-Wire Interface General Description On-board local tem perature sensing The LM 83 is a digital tem perature senso r w ith a 2 w ire serial interface th a t senses the voltage and thus the tem perature of

2TX650

Abstract: zetex ZTX360 2N39045 2N4125 TRANISTOR 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP
Contextual Info: SbE D • ^ c]7QS7fl GOGt.'igS Tbfl « Z E T B TABLE 3 : NPN SWITCHING T -3 5 - s / M a x V CE sat| T yp e V CEO V M ax 'c mA M in f-i- M ax. S w itch in g T im es at at at 'c mA •b M in M ax 'c 'c 'on mA m A M H z m A ns at C om plem ent V toff ns lc mA

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

vogt

Abstract: din 46245 din 46245-A 3902S 3904S ch4654 3986A
Contextual Info: Vogt AG CH-4654 Lostorf Switzerland Postfach 148 Telefon 062 / 285 75 75 Vogt Verbindungstechnik Telefax 062 / 285 74 74 Flachsteckhülsen und Stecker mit Isolation Clips femelles plats et fiches avec isolation Flat receptacles and tabs with insulation Werkstoff :

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W