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Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX360 ISSUE 2 -M A R C H 94_ FEATURES * 40 Volt V CE0 * 1 A m p continuous current * Fast switching E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L
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ztx360500ma100mhz |
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ZTX360
Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX360 ISSUE 2 MARCH 94 FEATURES * 40 Volt VCEO * 1 Amp continuous current * Fast switching C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO
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ztx360500ma100mhz |
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Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX360 ISSUE 2 -M A R C H 94_ FEATURES * 40 Volt V,CEO 1 Am p continuous current Fast switching E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage
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ztx360001g35s |
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transistor t2a
Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200
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bsy95aztx310bsv23ztx311+14bsv24ztx312bsv25ztx313bsv26ztx314transistor t2a2n2206 transistorztx312 transistor2n2475n706absx122n2206j 2n2369
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transistor ZTX302
Abstract: ZTX502 transistor ztx304 BFS98 ZTX109 ZTX452 transistor MPSA06 transistor ZTX108 BC546P BC556P
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and O UTPUT ST A G ES, O SC ILLA TO RS, AND GENERAL PURPO SE
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ztx453ztx452ztx552mpsa06+13mpsa56bc546pbc556pztx451bc558bbc558ctransistor ztx302ztx502transistor ztx304bfs98ztx109transistor mpsa06transistor ztx108
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ZTX327
Abstract: ZTX321
Contextual Info: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS PART NO. VCEO •c Vce V fT min @ MHz mA PIN OUT 123 V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.4 0.4 0.5 0.35 20 20 2 50 2.0 2.0 0.1 5.0 50 50 30 50 30 30 2 10 10 10 1 6 50 50 80 150 10 10
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mpsa42fxta42ztx341ztx300+7mpsa92fxta92ztx541ztx500ztx327ztx3866ztx321
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AL102 ATES
Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible
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trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29
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BCX38C
Abstract: darlington transistor MPSA14 BCX38A BCX38B MPSA12 MPSA13 MPSA14 ZTX360 100 amp npn darlington power transistors
Contextual Info: DARLINGTON TABLE 8 - NPN SILICON DARLINGTON TRANSISTORS The devices shown in this table are designed for applications requiring very high current gain. The m onolithic construction has the inherent advantages o f fast sw itching times, low saturation voltages and lo w leakage current.
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bcx38cbcx38bbcx38ampsa1-25+6mpsa14mpsa13mpsa12ztx360darlington transistor mpsa14100 amp npn darlington power transistors
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BFS98
Abstract: ZTX313 ZTX109 ZTX302 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE
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ztx453ztx452ztx552mpsa06+11mpsa56bc546pbc556pztx45130-15k2n3903bfs98ztx313ztx109ztx302bfs61
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2N4400
Abstract: 2N4401 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2222A MPS2907A MPS3642
Contextual Info: TABLE 3 : NPN SWITCHING The transistors in this table are characterised for general medium/high speed switching applications and other application areas, e.g. high speed core driving. Max VcE sat at Max Type V CEO V at at Max. Switching Times at Complement
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bcy65epbcy77pmps3642bcy59p+7bcy79pztx360mps2222amps2907a2n44012n44032n4400
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ZTX415
Abstract: ZTX341 ZTX384 S2222A ZTX327 ZTX321 ZTX3866 ZTX325
Contextual Info: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS P ART V CBO v CEO hFE m ln @ V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.5 0 .3 5 -3 00 -300 -100 -3 00 -3 00 -100 -0 .5 -0 .5 -0.1 -0 .4 -0 .4 -0 .5 -25 -2 5 -0 .2 -0 .3 5 PIN f t LU v CE sat
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fxta42ztx341ztx300fxta92+10ztx500ztx327ztx3866fxt3866ztx325ztx320ztx415ztx384s2222aztx321
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WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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rg121juwima tfmbeckman 785-1mkb3+7wima tfm-.1uf-160vbf197diode zener ph c9v12n42862n3642bf197ptransistor 2n2359a
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transistor t2a
Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
Contextual Info: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200
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bsy95aztx310bsv23ztx311+14bsv24ztx312bsv25ztx313bsv26ztx314transistor t2anpn transistor 2n2222ast 2n 2907azdt- 5vbsv27j 2n2369ztx312 dataztx313 data
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BC546P
Abstract: BC556P BFS61 BFS98 MPSA06 MPSA56 ZTX451 ZTX452 ZTX453 ZTX551
Contextual Info: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: A U D IO F REQ U EN C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L P U R P O S E
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ztx453ztx452ztx552mpsa06+9mpsa56bc546pbc556pztx451100ps2907amps2222abfs61bfs98ztx551
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
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zvp2106czvp2110azvp2110czvp2120a+11ztx788bzvp2120czvp3306azvp3310azvp4105a2110cztx752 equivalenttransistor 42-10a databc369fxta92bss98
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2TX650
Abstract: zetex ZTX360 2N39045 2N4125 TRANISTOR 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP
Contextual Info: SbE D • ^ c]7QS7fl GOGt.'igS Tbfl « Z E T B TABLE 3 : NPN SWITCHING T -3 5 - s / M a x V CE sat| T yp e V CEO V M ax 'c mA M in f-i- M ax. S w itch in g T im es at at at 'c mA •b M in M ax 'c 'c 'on mA m A M H z m A ns at C om plem ent V toff ns lc mA
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tc17gs7flbcy65epbcy77pbcy59p+12bcy79pztx360mps2222a5mps2907a2n44012n44032tx650zetex ztx3602n390452n4125 tranistor2n44002n4402
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transistor 2N3905
Abstract: 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2907A
Contextual Info: TABLE 3 : NPN SWITCHING M ax V CE sat M ax Type V CEO M in h FE fT Max. Sw itching Times at at at •c mA Iß Min M ax 'c 'c ^on mA m A M H z m A ns at Complement 'c ^off Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 1 00 0 .35 10 0 .25 1 20 4 6 0 2 125 10 1 50 8 0 0
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bcy65epbcy77pbcy59pbcy79p+8ztx360mps2222a5mps2907a2n44012n44032n4400transistor 2n39052n4402
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3906 2n
Abstract: 2N3906 MPS2907A
Contextual Info: TABLE 3 : NPN SWITCHING Max V CE satl Type V CEO Max 'c Min fT hFE at at at Max. Switching Times at Complement V 'c ^on 'b Min Max mA mA mA MHz mA ns t0f< •c ns mA V mA B C Y 6 5 EP 60 100 0 .3 5 10 0 .2 5 120 4 6 0 2 125 10 150 800 BC Y5 9P 45 200 0 .3 5
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ztx360ps2222a2n44012n39045+9ps22222n4123ps706aps706ztx314ztx3133906 2n2n3906mps2907a
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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