37DBM Search Results

FMM5826X

Abstract: Ka-band ED-4701
Contextual Info: FMM5826X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 28 dBm Typ. •High Linear Gain; GL = 21 dB(Typ.) •Frequency Band ; 27.0 - 30.0 GHz •High Linearity ; OIP3 = 37dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5826X is a power amplifier MMIC that contains a threestage amplifier, internally matched, for standard communications

Contextual Info: E-pHEMT AE616 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 37dBm Output IP3 • 20dB Gain at 900MHz • 24dBm P1 dB • Single +5V Supply • Pb Free / RoHS Standard • Cellular, PCS, W-CDMA Systems • High Linearity Drive Amplifier

Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.

Contextual Info: AM204437WM-BM-R March 2008 Rev. 2 DESCRIPTION AMCOM’s AM204437WM-BM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. This MMIC is RoHS compliant.

Contextual Info: AM204437WM-BM-R AM204437WM-FM-R December 2008 Rev. 3 DESCRIPTION AMCOM’s AM204437WM-BM-R and AM204437WM-FM-R are part of the GaAs MMIC power amplifier series. Both MMICs have 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. These MMIC are in a ceramic

mmics

Contextual Info: AM204437WM-BM-R AM204437WM-FM-R Aug 2010 Rev 4 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM204437WM-BM/FM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain and 37dBm output power over the 2.2 to 4.2GHz band. This MMIC is in a ceramic package with both RF and DC leads at the

Contextual Info: Product Information ISO 9001 CERTIFIED 6006 5.725 to 5.825 GHz GaAs MMIC U-NII Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ 24 dB Small Signal Gain 25dBm Linear Output Power 37dBm Third Order Intercept Point Thermally Efficient Moly-Copper Package

Ferronics 12-340-k

Abstract: TDK Ferrite Core L6
Contextual Info: MMIC AP230 Product Features • • • • • • • • • • • • • Application Small size NO matching circuit needed High efficiency Dual supply voltage Higher linearity Higher productivity Lower manufacturing cost GaAs MMIC 3MHz - 2GHz -63dBc CSO 135 Channels@ output Level +37dBmV

Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.

Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.

ZHL-5W-1 Mini-Circuits

Abstract: 4576 5w ZHL-5W-1X DDD131
Contextual Info: Coaxial High Power Amplifier 50Ω 5W ZHL-5W-1 5 to 500 MHz Features • High power, 5 Watt • Wideband, 5 to 500 MHz • High power output, +37dBm min. • High gain, 40 dB Min. • Low noise figure, 4 dB typ. • High IP3, +49 dBm typ. Model No. Case Style

DDD131

Contextual Info: Coaxial High Power Amplifier 50Ω 5W ZHL-5W-1 5 to 500 MHz Features • High power, 5 Watt • Wideband, 5 to 500 MHz • High power output, +37dBm min. • High gain, 40 dB Min. • Low noise figure, 4 dB typ. • High IP3, +49 dBm typ. Model No. Case Style

TIA-1000-1R8

Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.

Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-1R8 High Power 0.50 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 37dBm typ. • high gain, 38 dB typ. • high reverse isolation, 80 dB typ.

Bookham

Abstract: NN12 P35-5130-000-200 15 GHz power amplifier Output Power 37dBm
Contextual Info: Data sheet Engineering Datasheet 8.5 – 10.5GHz Power Amplifier Features • 15dB Gain Typical • P-1dB; 37dBm typical @ 9.5GHz The P35-5130-000-200 is a high performance 8.510.5GHz Gallium Arsenide power amplifier, capable of output powers of 5 Watts. The die is fabricated using Caswell Technology's 0.20µm

60Ghz

Abstract: 60GHz transistor
Contextual Info: EIM8911-5 8.95-10.6GHz Multi-Stage Power Amplifier UPDATED: 02/26/2009 FEATURES • • • • 8.95– 10.60GHz Operating Frequency Range 37dBm Output Power at 2dB Compression 26.0 dB Typical Power Gain @2dB gain compression Non-Hermetic Metal Flange Package

AE616

Contextual Info: E-pHEMT AE616 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 37dBm Output IP3 • 20dB Gain at 900MHz • 24dBm P1 dB • Single +5V Supply • Pb Free / RoHS Standard • Cellular, PCS, W-CDMA Systems • High Linearity Drive Amplifier

1FT sot23-6

Abstract: TGF4260 TGF4260-SCC UM 7108 F
Contextual Info: Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz

Contextual Info: MMIC AP230 Product Features Application • Small size • NO matching circuit needed • High efficiency • Dual supply voltage • Higher linearity • Higher productivity • Lower manufacturing cost • GaAs MMIC • 3MHz - 2GHz • -63dBc CSO 135 Channels@ output Level +37dBmV

Contextual Info: E-pHEMT AE616 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 37dBm Output IP3 • 20dB Gain at 900MHz • 24dBm P1 dB • Single +5V Supply • Pb Free / RoHS Standard • Cellular, PCS, W-CDMA Systems • High Linearity Drive Amplifier

AM07511037UM-3H

Contextual Info: AM07511037UM-3H January 2014 Rev1 Power Amplifier Module 7.5 - 11.0GHz, 25dB, 5W DESCRIPTION AMCOM’s AM07511037UM-3H is a broadband GaAs power module. It has 25dB small signal gain, and 37dBm output power over the 7.5 to 11.0GHz band at 5V bias. Because of

Contextual Info: Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz

Contextual Info: MMIC AP230 Product Features • • • • • • • • • • • • • Application Small size NO matching circuit needed High efficiency Dual supply voltage Higher linearity Higher productivity Lower manufacturing cost GaAs MMIC 3MHz - 2GHz -63dBc CSO 135 Channels@ output Level +37dBmV

CGB8002-SC

Abstract: CGB8002-SC-0G00 CGB8002-SC-0G0T
Contextual Info: DC-2.8 GHz InGaP HBT 3.3V, Matched Gain Block Amplifier April 2008 - Rev 28-Apr-08 CGB8002-SC Features Functional Block Diagram SOT-89 14 dBm Linear Power @ 2140 MHz 17 dB Gain @ 2140 MHz 15 dB Gain @ 2700 MHz 37dBm OIP3 @ 2700 MHz 22 dBm P1dB @ 2140 MHz