33 UPS 063 Search Results

Contextual Info: VPN = Voltage Transducer CV 3-1500 1000 V For the electronic measurement of voltages : DC, AC, pulsed., with a galvanic isolation between the primary circuit high voltage and the secondary circuit (electronic circuit). 0630 Electrical data VPN VP VS KN

Partial Discharge Measurements

Abstract: LEM Components EN 50155
Contextual Info: Voltage Transducer CV 3-1500 VPN = 1000 V For the electronic measurement of voltages : DC, AC, pulsed., with a galvanic isolation between the primary circuit high voltage and the secondary circuit (electronic circuit). 0630 Electrical data VPN VP VS KN

SK25GD063

Contextual Info: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 600 ± 20 30 / 21 60 / 42 36 / 24 72 / 48 V V A A A A – 40 . + 150 – 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C

6ES7307-1EA00-0AA0

Abstract: 6ES7307-1BA00-0AA0 siemens 6ES7307-1EA00-0AA0 6EP1334-3BA00 6ES7307-1KA01-0AA0 6EP1333-3BA00 6ES7307-1BA00-0AA0 siemens 6EP1336-3BA00 siemens 6ep1334-3ba00 SIEMENS, SITOP Power 40, 6EP1437-2BA10
Contextual Info: SITOP power supply Technical data SITOP Power Supply Answers for industry. E80001-A2490-P310-V2-7600_BL.indd 1 08.05.2009 13:14:13 Uhr Selection table SITOP power supplies Input voltage Output current modular smart LOGO!Power “Special design, special use“

Contextual Info: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 600 ± 20 30 / 21 60 / 42 36 / 24 72 / 48 V V A A A A − 40 . + 150 − 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C

Semikron Semitop 3

Abstract: Semikron sk 1
Contextual Info: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM Th = 25/80 °C tp < 1 ms; Th = 25/80 °C Th = 25/80 °C tp < 1 ms; Th = 25/80 °C 600 ± 20 30 / 21 60 / 42 36 / 24 72 / 48 V V A A A A Tj, Tstg) Tsol Visol

MOSFET 11N80 Data sheet

Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Contextual Info: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250

Contextual Info: Series 72 Annular Tubing 121-190 Annular Polymer-Core Convoluted Tubing with External Braid Tubing plus a single EMI/RFI braided shield How To Order Product Series Dash No. Table I 121 - 190 - 16 B Basic No. Table I - Dash Number/Diameter A Inside Dia B Outside Dia

Contextual Info: Series 72 Annular Tubing 121-192 Annular Polymer-Core Convoluted Tubing with Double External Braid Tubing plus a double layer of high dB EMI/RFI shielding How To Order Product Series B Dash No. Table I 121 - 192 - 16 Basic No. Dash No 06 09 12 14 16 20 24

SK25GB063

Abstract: SEMITOP 063 SK 200 GAR 125 33 ups 063
Contextual Info: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 600 ± 20 30 / 21 60 / 42 36 / 24 72 / 48 V V A A A A – 40 . + 150 – 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C

BiMOSFET

Abstract: 40N160
Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C G C E E Symbol Conditions Maximum Ratings 40N140 40N160 VCES TJ = 25°C to 150°C 1400 1600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

121-192

Contextual Info: Series 72 Annular Tubing 121-192 Annular Polymer-Core Convoluted Tubing with Double External Braid Tubing plus a double layer of high dB EMI/RFI shielding How To Order Product Series B Dash No. Table I 121 - 192 - 16 Basic No. Dash No 06 09 12 14 16 20 24

121-190

Contextual Info: Series 72 Annular Tubing 121-190 Annular Polymer-Core Convoluted Tubing with External Braid Tubing plus a single EMI/RFI braided shield How To Order Product Series Dash No. Table I 121 - 190 - 16 B Basic No. Table I - Dash Number/Diameter A Inside Dia B Outside Dia

Semikron Semitop 3

Abstract: 33 ups 063 Semikron Semitop 2
Contextual Info: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM Th = 25/80 °C tp < 1 ms; Th = 25/80 °C Th = 25/80 °C tp < 1 ms; Th = 25/80 °C 600 ± 20 30 / 21 60 / 42 36 / 24 72 / 48 V V A A A A Tj, Tstg) Tsol Visol

Contextual Info: 1 2 D3PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 APT30S20S 2 200V 30A HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics

100V 60A Diode

Contextual Info: 1 2 D3PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 APT60S20S 2 200V 60A HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics

6ES7307-1EA01-0AA0

Abstract: 6EP1971-1BA00 6EP1331-1SH02 6EP1436-2BA10 6EP1332-1SH42 SIEMENS, SITOP Power 40, 6EP1437-2BA10 6ES7307-1BA01-0AA0 6EP1336-3BA00 ET200pro 6EP1437-3BA10
Contextual Info: SITOP power supply Technical data, April 2010 SITOP Power Supply Answers for industry. E80001-A2490-P310-V4-7600_BL.indd 1 14.04.10 09:47 SITOP – reliable 24 V DC power supply Efficient operation of a machine or plant requires a reliable, constant power

3sk45

Contextual Info: Absolute Maximum Ratings Symbol Conditions 1 Values Units VCES VGES IC ICM IF = –IC IFM = –ICM 600 ± 20 45 / 30 90 / 60 57 / 38 114 / 76 V V A A A A − 40 . + 150 − 40 . + 125 260 2500 °C °C °C V Tj Tstg Tsol Visol Th = 25/80 °C tp < 1 ms; Th = 25/80 °C

SKIIP 32 nab 12 t 49

Abstract: SKiiP 33 NEC 125 To skiip 33 ups 063 semikron skiip 24 nab 125 t 12 thyristor firing circuit SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 20 nab 12 I T 38 Semikron skiip 31 nab 12 semikron skiip 81 AN 15 T semikron skiip 32 nab 12
Contextual Info: MiniSKiiP Do it your way MiniSKiiP Technology • Pressure contact of all power and auxiliary connections instead of soldered joints. ■ Integration of latest chip technology: • Low switching loss, 600V or 1200V, homogeneous NPT IGBTs with antiparallel

30A Ultrafast Diode APT

Contextual Info: 1 2 D3PAK 1 - Cathode 2 - Anode Back of Case - Cathode 1 APT30D30S 2 300V 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics

APT60D30B

Abstract: APT60D30S
Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT60D30B APT60D30S 300V 300V 60A 60A 1 2 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • TO-247 or Surface Mount

30n60u

Abstract: 30N60A ixgh30n60a IXGM30N60
Contextual Info: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms

Contextual Info: 3 2 5 A Avg. 5 0 0 R M S Up to 8 0 0 Volts 1 0 -5 0 fjs Fast Switching SCR T 7 0 7 _ _33 Inches Symbol Millimeters M in. Max. Min. -Max. A A, B 9.76 10.18 .063 10.00 10.42 .172 247.90 258.57 1.60 254.00 264.67 4.37 0D E F 1.620 .430 1.490 1.750 .810 41.15

Contextual Info: Semiconductor Semiconductorfuses AC fuses Protistor Square-body Fuses PSC gR sizes 7x - 690 VAC Main characteristics Ferraz Shawmut PSC-gRB 690 VAC fuse-links provide maximum flexibility in equipment design and ultimate protection for today’s power conversion equipment.